Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6E0808C1E-JL15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0				.0005 Amp	18.42 mm	15 ns
K7N801809B-QC200	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	3.2 ns
KM6168000LR-7L	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	YES	3-STATE	512KX16	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e0				.00002 Amp	18.41 mm	70 ns
K6L1016C3B-TB550	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							18.41 mm	55 ns
KM64257P-35	Samsung	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T24	3					Not Qualified	262144 bit			e0				.002 Amp		35 ns
K6X1008T2D-BF55T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit							.000006 Amp		55 ns
K6F8016U6B-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			512KX16	512K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	8388608 bit	2.7 V							7 mm	55 ns
K7R320984C-FI30	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	4194304 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX9	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	37748736 bit					240		.33 Amp		.45 ns
KM6164002CTI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	18.41 mm	10 ns
K7S3218U4C-EI400	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	2097152 words	SEPARATE	1.8	1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE			260		.35 Amp	17 mm	.45 ns
K7S3218U4C-FC330	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE	1.8	1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE			240		.3 Amp	17 mm	.45 ns
KM64V4002CLJ-200	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			1MX4	1M		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V							20.95 mm	20 ns
K6T1008S2E-TF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		2.7 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.3 V							18.4 mm	100 ns
K7N801801A-QC15	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	410 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	9437184 bit			e0				.01 Amp		3.8 ns
K6F3216T6M-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B55		3.6 V	1 mm		7.5 mm	Not Qualified	33554432 bit	2.7 V							12 mm	70 ns
K7J640882M-FC25	Samsung	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	8MX8	8M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	67108864 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
K7M163625A-QI850	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX36	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	8.5 ns
K6T4016V3C-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0					18.41 mm	100 ns
K7I163684B-EC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1				.23 Amp	15 mm	.45 ns
K7N163645A-FI20	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.625 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.2 ns
K7S1636U4C-EC45T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1050 mA	524288 words	SEPARATE		1.5,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	18874368 bit			e1		260		.4 Amp		.45 ns
K7A801800A-PC16	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	9437184 bit							.05 Amp		3.5 ns
K7P401811A-HC250	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON		1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit							.06 Amp		2 ns
KM616FR4010ZI-7	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	.81 mm		6 mm	Not Qualified	4194304 bit	1.7 V							8 mm	70 ns
K6F2016R4D-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		6 mm	Not Qualified	2097152 bit	1.65 V	IT CAN ALSO OPERATE AT 2V						7 mm	85 ns
KM736S949H-75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.625 V		133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.03 Amp	22 mm	4.2 ns
KM736V749-67	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	SELF-TIMED WRITE CYCLE						20 mm	3.8 ns
K6X4008C1F-VF55T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	4194304 bit							.000012 Amp		55 ns
K6X4008C1F-BB55	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	3	5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V				260		.000012 Amp	20.47 mm	55 ns
K7A163631B-PC20T	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	340 mA	524288 words	COMMON	2.5	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY		NOT SPECIFIED	NOT SPECIFIED		.13 Amp	20 mm	3.1 ns
K7B201825B-QC65	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.05 Amp	20 mm	6.5 ns
K7B401825A-QC65	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			133 MHz		Not Qualified	4718592 bit			e0				.05 Amp		6.5 ns
K6F4008R2C-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0						85 ns
K7A801800M-HC160	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.5 ns
KM6164002CLT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS						18.41 mm	12 ns
K7B403225M-QC900	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V							20 mm	9 ns
K7I643684M-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
KM616U2000LT-8L0	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			128KX16	128K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V							18.41 mm	85 ns
K6R1004C1A-JC120	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	4.5 V	0 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit							.008 Amp		12 ns
K7N803609B-QI25T	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	470 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	1			250 MHz		Not Qualified	9437184 bit							.06 Amp		2.6 ns
K7B161825M-HC90T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	18874368 bit			e0				.03 Amp		9 ns
K6L0908U2A-TD10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	524288 bit			e0						100 ns
KM616V8000T-7	Samsung
K7A161800A-QI220	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel			1MX18	1M		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	2.8 ns
KM6264BS-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.002 Amp	34.415 mm	100 ns
K7A323600M-FC20	Samsung	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	200 MHz	15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					17 mm	3.1 ns
K6T4008C1C-VB700	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	70 ns
K7N163601M-TC16	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX36	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V							20 mm	3.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.