Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM62256BLR-10L	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00001 Amp	12.4 mm	100 ns
K7B803625A-TC10	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V						20 mm	10 ns
K7A403209B-PC250	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100	2	3.6 V	1.6 mm	250 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE				.05 Amp	20 mm	2.4 ns
KM616FS1000Z-15	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON		2.3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	64KX16	64K	1.5 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.3 V	.81 mm		6 mm	Not Qualified	1048576 bit	2.3 V		e0			.000005 Amp	8 mm	150 ns
K7N801809B-QC22	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V						20 mm	2.8 ns
K6X8016C3B-TF55T00	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	8388608 bit								55 ns
K7B163625A-FC750	Samsung	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			512KX36	512K		0 Cel		BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		13 mm	Not Qualified	18874368 bit	3.135 V						15 mm	7.5 ns
K6X8008C2B-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	1MX8	1M	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e0				18.41 mm	70 ns
K6F8016R6M-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	2	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V		e0				12 mm	85 ns
K7B803625B-QI750	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					.06 Amp	20 mm	7.5 ns
K6T0908V2B-YF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	524288 bit			e0					85 ns
KM62256CLP-7L	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00001 Amp	36.32 mm	70 ns
K6L0908C2A-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			64KX8	64K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	524288 bit	4.5 V						18.4 mm	70 ns
K7M323625M-65	Samsung
K6F4016U6G-AF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1					Not Qualified	4194304 bit			e3			.000003 Amp		55 ns
K6T1008C2E-RB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			.00001 Amp	18.4 mm	70 ns
K7Q161862B-FC160	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.6 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				15 mm	2.5 ns
K7B321825M-QC650	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	2MX18	2M	3.14 V	0 Cel		QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	6.5 ns
K6F3216U6M-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA55,8X12,30	SRAMs	.75 mm	85 Cel		3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B55		3.3 V	1 mm		7.5 mm	Not Qualified	33554432 bit	2.7 V		e0			.00002 Amp	12 mm	70 ns
K7B321825M-HC750	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			2MX18	2M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	37748736 bit	3.135 V						22 mm	7.5 ns
K7A803600A-HC150	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE					22 mm	3.8 ns
K6R1016C1D-UC10	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	TIN SILVER COPPER	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e1	260		.005 Amp	18.41 mm	10 ns
K6R1004C1B-JC12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.01 Amp	20.96 mm	12 ns
KM616FV8000RI-7	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3 V						18.41 mm	70 ns
K1S1616B1B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	1					Not Qualified	16777216 bit								70 ns
K6F1016S3M-TF12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						18.41 mm	120 ns
K6L1016C3B-TF100	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V						18.41 mm	100 ns
KM616V4000BLRI-8L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0			.00002 Amp	18.41 mm	85 ns
KM732V789H-60	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	GRID ARRAY			1.27 mm	70 Cel			128KX32	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V			14 mm	Not Qualified	4194304 bit	3.135 V	SELF-TIMED WRITE CYCLE					22 mm	3.5 ns
K7B323625M-QC650	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX36	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	6.5 ns
KM732V787-9	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V	ONCHIP ADDRESS COUNTER; SELF TIMED WRITE CYCLE					20 mm	9 ns
KM616V1002BLTI-8	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0			.0003 Amp	18.41 mm	8 ns
K7P161811M-HC30	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	1048576 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.55 mm	300 MHz	14 mm	Not Qualified	18874368 bit	3.15 V		e0			.15 Amp	22 mm	1.6 ns
K7A803600A-QC10T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	9437184 bit			e0			.05 Amp		4.5 ns
K7A401849A-TC20	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX18	256K		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	4718592 bit	2.375 V	SELF-TIMED WRITE CYCLE					20 mm	3.1 ns
K7N401801B-QI13	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.05 Amp	20 mm	4.2 ns
KM641002BJ-8	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V						20.96 mm	8 ns
K6T2008V2M-TB85	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	256KX8	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	3 V		e0				18.4 mm	85 ns
K7P801811M-HC25	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE					22 mm	2 ns
K7J321882C-FC30T	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			2MX18	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.45 ns
K7B803625M-QC90	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	9437184 bit			e0			.03 Amp		9 ns
K7N163631B-EI25T	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B165	1			250 MHz		Not Qualified	18874368 bit			e3			.13 Amp		2.6 ns
K7R161884B-EC300	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.23 Amp	15 mm	.45 ns
KM718V049T-10	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.03 Amp	20 mm	5 ns
K7B801825B-QC65T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100	1			133 MHz		Not Qualified	9437184 bit						.06 Amp		6.5 ns
KM6264BLG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	65536 bit	4.5 V		e0		YES	.00005 Amp	18.29 mm	100 ns
K7P403666A-H2700	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel			128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	ALSO REQUIRES 1.5V I/O SUPPLY					22 mm
K7Q323652M-FC16	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	SEPARATE	2.5	1.5/1.8,2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	2.4 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.6 V	1.4 mm	166.66 MHz	15 mm	Not Qualified	37748736 bit	2.4 V		e0				17 mm	2.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.