Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7K3218U2C-FC450	Samsung	DDR SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	COMMON		1.5/1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	37748736 bit					240		.4 Amp		.45 ns
K7A163600A-QI140	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX36	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE		30	225			20 mm	4 ns
KM6465BJ20	Samsung
K6R1016V1B-JL10	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0004 Amp	28.58 mm	10 ns
K7K1636U2C-EC400	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	18874368 bit			e1		260		.35 Amp		.45 ns
K6T4008V1B-GF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V							20.47 mm	85 ns
K6T1008V2E-RF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V			30	240			18.4 mm	100 ns
KM616V4000BLZI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	.81 mm		7.2 mm	Not Qualified	4194304 bit	3 V	BATTERY BACKUP OPERATION						11.65 mm	100 ns
K7B201825B-QI650	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel			128KX18	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	6.5 ns
K7N403209B-QC200	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm
KM732V789T-67	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	150 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	20 mm	3.8 ns
KM718V949T-10	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	20 mm	5 ns
KM616FS2000RI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON		2.3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	2097152 bit			e0				.00001 Amp		100 ns
K7A403609A-QC30	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	590 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			300 MHz		Not Qualified	4718592 bit			e0				.05 Amp		2.2 ns
K7J641882M-FI20	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	75497472 bit			e1						.45 ns
KM732V596ALT-130	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			32KX32	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.13 V	LINEAR OR INTERLEAVED BURST						20 mm	6 ns
K6R1016V1C-TL12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	18.41 mm	20 ns
K7A803600A-HC14T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			138 MHz		Not Qualified	9437184 bit			e0				.05 Amp		3.8 ns
KM644002CJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	1MX4	1M	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	20.96 mm	12 ns
K7B203625A-TC80	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			64KX36	64K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	SELF-TIMED WRITE CYCLE						20 mm	8 ns
KM718V787AT-9000	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX18	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V							20 mm	9 ns
K7A163600A-FC200	Samsung	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			512KX36	512K		0 Cel		BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						15 mm	3.1 ns
KM718S949T-60	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			166 MHz		Not Qualified	9437184 bit			e0				.02 Amp		3.5 ns
K7I321882C-EI33T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165				333 MHz		Not Qualified	37748736 bit			e1				.3 Amp		.45 ns
KM616V4002BJ-12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.01 Amp	25.58 mm	12 ns
K6T1008C2E-TB55T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0				.00001 Amp		55 ns
K7A801801M-QC14	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	138 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	20 mm	4 ns
K7I321882M-FC20	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.18 Amp	17 mm	.45 ns
KM732V787-8	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V	ONCHIP ADDRESS COUNTER; SELF TIMED WRITE CYCLE						20 mm	8 ns
KM616V1002CLFI-20	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	7 mm	20 ns
K6R1016C1A-JI150	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel		DUAL		R-PDSO-J44	1	5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V						.008 Amp	28.58 mm	15 ns
K6R1016V1A-JI15T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-J44						Not Qualified	1048576 bit							.005 Amp		15 ns
K6X1008T2D-PB550	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V		e6				.000006 Amp	18.4 mm	55 ns
K7A803601M-QC110	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4.2 ns
KM718V990-85	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V							20 mm	4.2 ns
K6L1008U2C-TB10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0						100 ns
KM6165LJ-45	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24	3					Not Qualified	65536 bit			e0				.00005 Amp		45 ns
K7A161830B-PI16T	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON		2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	1			167 MHz		Not Qualified	18874368 bit			e3				.13 Amp		3.5 ns
K7R323684C-FI300	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.33 Amp	17 mm	.45 ns
K7R163684B-FC25	Samsung	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm			3-STATE	512KX36	512K	1.7 V		TIN LEAD	BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	18874368 bit			e0				.21 Amp		.45 ns
K7R163684B-EC250	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.21 Amp	15 mm	.45 ns
K7A801809A-HC200	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.1 ns
K7M321835C-QC65T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	2097152 words	COMMON		2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	2MX18	2M	2.38 V	0 Cel	TIN SILVER COPPER	QUAD		R-PQFP-G100	3			133 MHz			37748736 bit			e1				.1 Amp		6.5 ns
K7R640982M-EC200	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			17 mm	.45 ns
K7S1636T4C-EC330	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	SEPARATE	1.8	1.5,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.3 Amp	17 mm	.45 ns
K7R321884C-EC33	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit					260		.35 Amp		.45 ns
KM6264BLP-10L	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES	.000005 Amp	36.32 mm	100 ns
K7A403601M-QC11T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			117 MHz		Not Qualified	4718592 bit			e0				.03 Amp		5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.