Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7K1618U2C-EI330	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	18874368 bit			e1		260		.3 Amp		.45 ns
KM616FV1000TI-8	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.000005 Amp	18.41 mm	85 ns
K6T4008C1C-VF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	4194304 bit			e0						70 ns
K6X4016C3F-UB70	Samsung
K7I160884B-FC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			2MX8	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE						15 mm	.5 ns
K7N403601M-QC130	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100				133 MHz		Not Qualified	4718592 bit							.03 Amp		4.2 ns
KM64257LJ-25	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24	3					Not Qualified	262144 bit			e0				.00005 Amp		25 ns
K7B321835C-PI750	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	2097152 words	COMMON	2.5	2.5/3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	2MX18	2M	2.38 V	-40 Cel		QUAD		R-PQFP-G100	2	2.625 V	1.6 mm	117 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	ALSO OPERATES AT 3.3V						20 mm	7.5 ns
KM718B90J-11	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel		3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.52 mm		19.05 mm	Not Qualified	1179648 bit	4.75 V		e0			YES	.09 Amp	19.05 mm	11 ns
K7M801825B-HC85	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	8.5 ns
K6F1008S2M-TC150	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.3 V							18.4 mm	150 ns
K6F1016U4C-AF70	Samsung
K6T1008U2E-TB10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0						100 ns
K7N641831M-QC25	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.8/3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	4MX18	4M	1.7 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			250 MHz		Not Qualified	75497472 bit			e0						2.6 ns
K7A403200B-QC160	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.05 Amp	20 mm	3.5 ns
K7N163645A-FC20	Samsung	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.625 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.2 ns
KM616FS4010ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.6 V	.94 mm		8.2 mm	Not Qualified	4194304 bit	2.4 V		e0					8.7 mm	100 ns
K7A163200A-QI16	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	512KX32	512K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	167 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	3.5 ns
K7R643682M-FC16T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	75497472 bit			e1						.5 ns
K6E0808V1C-TC17	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V	TTL COMPATIBLE I/O	e0				.0001 Amp	11.8 mm	17 ns
K6L0908U2A-GB10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	64KX8	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	3 mm		11.43 mm	Not Qualified	524288 bit	2.7 V		e0					20.47 mm	100 ns
K6R1004C1B-JC8	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0				.01 Amp		8 ns
K7R323682M-FC25	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1030 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.33 Amp	17 mm	.45 ns
KM62256CLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	18.29 mm	70 ns
K7B401825B-QI65	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0				.05 Amp	20 mm	6.5 ns
K7N163631B-QI16T	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	1			167 MHz		Not Qualified	18874368 bit							.13 Amp		3.5 ns
KM644002AJE-20	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	1MX4	1M	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	20.96 mm	20 ns
K7Q161852A-FC10	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	420 mA	1048576 words	SEPARATE	2.5	1.5/1.8,2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	2.4 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.6 V	1.4 mm	100 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0				.19 Amp	15 mm	3 ns
K6X4008T1F-GB550	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	1	3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V						.00001 Amp	20.47 mm	55 ns
K7Q323654M-FC25	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	SEPARATE	2.5	1.5/1.8,2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	2.4 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.6 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	2.4 V	PIPELINED ARCHITECTURE	e0					17 mm	2 ns
K6R1016C1C-JP10	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	1048576 bit			e0				.0003 Amp		10 ns
KM611001-25	Samsung	STANDARD SRAM		28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	IN-LINE							1MX1	1M				DUAL		R-PDIP-T28						Not Qualified	1048576 bit									25 ns
K7N803609B-QI200	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			256KX36	256K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	3.2 ns
K6X4016C3F-UB55T	Samsung
KM616FU1000TI-7	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	1048576 bit			e0				.000001 Amp		70 ns
KM718V889T-85	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR OR INTERLEAVED BURST	e0				.03 Amp	20 mm	4 ns
KM718FV4021H-5	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V	BYTE WRITE; POWER DOWN	e0				.06 Amp	22 mm	2.5 ns
KM616FS1000RI-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON		2.3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	1048576 bit			e0				.000005 Amp		150 ns
K6T4008V1C-VF85	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0					20.95 mm	85 ns
K7N801801M-HC10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	5 ns
K7N163245A-QC20	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX32	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	16777216 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	3.2 ns
K6T4008C1B-MB55	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	55 ns
KM616FS2000ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	.81 mm		6 mm	Not Qualified	2097152 bit	2.3 V							8 mm	100 ns
KM6161002CLIJ-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							28.58 mm	15 ns
K7R641884M-EI25S	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns
K7I323682M-FC16	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	166.66 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.16 Amp	17 mm	.5 ns
KM718V947T-8T	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	8.5 ns
K7J641882M-EI25	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.