Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6T4016U3C-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL	R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V					18.41 mm	85 ns
K7A803600M-QC200	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	3.1 ns
K7J643682M-EI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1			17 mm	.45 ns
K7A161830B-QI16	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON		2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel		QUAD	R-PQFP-G100	1			167 MHz		Not Qualified	18874368 bit					.13 Amp		3.5 ns
KM658128L-LP-10L-L	Samsung	STANDARD SRAM		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm				128KX8	128K				DUAL	R-PDIP-T32			5.08 mm		15.24 mm	Not Qualified	1048576 bit						41.91 mm	100 ns
K7J323682C-FC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0		.25 Amp	17 mm	.45 ns
KM6165AP-35	Samsung	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T22	3					Not Qualified	65536 bit			e0		.002 Amp		35 ns
K7A321800M-HI220	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel			2MX18	2M		-40 Cel		BOTTOM	R-PBGA-B119		3.465 V			14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	2.8 ns
K7I161884B-FI200	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		.19 Amp	15 mm	.45 ns
K6T1008U2E-GB10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	3 mm		11.43 mm	Not Qualified	1048576 bit	2.7 V		e0			20.47 mm	100 ns
K7R160982B-FI160	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			2MX9	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			15 mm	.5 ns
K6R1008V1C-TI15T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	73 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0		.005 Amp		15 ns
K7A163600M-QC10T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	524288 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3			100 MHz		Not Qualified	18874368 bit			e0		.03 Amp		4.5 ns
K7A403649A-QC200	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	390 mA	131072 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	2.37 V	0 Cel		QUAD	R-PQFP-G100				200 MHz		Not Qualified	4718592 bit					.04 Amp		3.1 ns
KM736V849T-60	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	3.5 ns
K7I323684C-EI330	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1		.3 Amp	17 mm	.45 ns
K6R1016V1A-TI120	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel		DUAL	R-PDSO-G44						Not Qualified	1048576 bit					.005 Amp		12 ns
K7R161884B-EC200	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1		.19 Amp	15 mm	.45 ns
KM61257LP-45	Samsung	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	2 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified	262144 bit			e0		.00005 Amp		45 ns
K6T1008V2E-YB10	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V		e0			11.8 mm	100 ns
K6R1016C1C-FI15T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48						Not Qualified	1048576 bit			e0		.005 Amp		15 ns
K7A803609A-HC18	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	420 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		183 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0		.05 Amp	22 mm	3.3 ns
K7M403625B-QI65	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.05 Amp	20 mm	6.5 ns
K7B801825A-QC75T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3			117 MHz		Not Qualified	9437184 bit			e0		.05 Amp		3.5 ns
K7N801845M-QC16	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	2.38 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3			166 MHz		Not Qualified	9437184 bit			e0		.02 Amp		3.5 ns
K6F1616R6M-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm		9 mm	Not Qualified	16777216 bit	1.65 V					12 mm	70 ns
K1B2816B6M	Samsung
K6L1008V2C-NB10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0				100 ns
K7I161884B-EC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1		.23 Amp	15 mm	.45 ns
KM64V1003CLJ-15	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			256KX4	256K		0 Cel		DUAL	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V					20.96 mm	15 ns
K7N161845A-FI16	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		2.625 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0		.06 Amp	15 mm	3.5 ns
KM718V889T-72	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	375 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	138 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR OR INTERLEAVED BURST	e0		.03 Amp	20 mm	4 ns
KM6161002CLF-150	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel			64KX16	64K		0 Cel		BOTTOM	R-PBGA-B48		5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					7 mm	15 ns
KM64V1001BJI-15	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	4.5 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-J28	3					Not Qualified	1048576 bit			e0		.005 Amp		15 ns
KM736V849H-75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION	e0		.03 Amp	22 mm	4.2 ns
K6T1008C2C-DB55	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V					41.91 mm	55 ns
K6T4008C1C-MB700	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K		0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					20.95 mm	70 ns
K7R643684M-FI20T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3			200 MHz		Not Qualified	75497472 bit			e1				.45 ns
KM62256CLGE-LV	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON		3.3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28						Not Qualified	262144 bit			e0		.00002 Amp		70 ns
K7B801825B-PC75	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	1			117 MHz		Not Qualified	9437184 bit			e3	225	.06 Amp		7.5 ns
K7D163674B-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel			512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			22 mm	.2 ns
K7B203625A-QC75	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX36	64K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0		.02 Amp	20 mm	7.5 ns
KMM966G225Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel			2MX64	2M		0 Cel		DUAL	R-XDMA-N144		3.6 V				Not Qualified	134217728 bit	3 V						6 ns
K6F8016U3A-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e0		.000006 Amp	18.41 mm	70 ns
K6X8008C2B-UF700	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			1MX8	1M		-40 Cel	TIN BISMUTH	DUAL	R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e6			18.41 mm	70 ns
K6R1008V1C-JC20	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0		.005 Amp	20.96 mm	20 ns
K6X4016T3F-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44	1	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				.0003 Amp	18.41 mm	55 ns
K6L1008V2C-YD70T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0				70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.