Samsung SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6F4016U4E-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000003 Amp	7 mm	55 ns
K7N403609B-QI25	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	250 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	20 mm	2.4 ns
K6T1008C2E-DB700	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				.00001 Amp	41.91 mm	70 ns
KM64B67J-20	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.05 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.008 Amp	15.875 mm	20 ns
K6T4016C3B-RF100	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	100 ns
K6F2008U2E-YF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V							11.8 mm	70 ns
K7N163601A-HI16	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel			512KX36	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.5 ns
K7N163631B-FI25T	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165	1			250 MHz		Not Qualified	18874368 bit							.13 Amp		2.6 ns
K6X0808C1D-LF55T00	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	1					Not Qualified	262144 bit			e3				.00001 Amp		55 ns
KM616FS1000RI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON		2.3/3.2	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	1048576 bit			e0				.000001 Amp		100 ns
K6R1008V1C-JC12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	20.96 mm	12 ns
K7M163635B-QI65	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	1			133 MHz		Not Qualified	18874368 bit							.13 Amp		6.5 ns
KM6164002AT-20	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	18.41 mm	20 ns
K7N163601M-PC16	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	524288 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX36	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100						Not Qualified	18874368 bit							.03 Amp		3.5 ns
K7A801809A-QC180	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	3.3 ns
K6L0908V2A-TD85	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	524288 bit	3 V		e0					18.4 mm	85 ns
K6R1008C1D-UI10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN SILVER COPPER	DUAL		R-PDSO-G32	3					Not Qualified	1048576 bit			e1		260		.005 Amp		10 ns
K7N803245B-QC160	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX32	256K		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	8388608 bit	2.375 V	PIPELINED ARCHITECTURE						20 mm	3.5 ns
K6T0908V2B-TB100	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			64KX8	64K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	524288 bit	3 V							18.4 mm	100 ns
K7N163645A-HC160	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel			512KX36	512K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE						22 mm	3.5 ns
K6T4016U3C-RF70T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	4194304 bit			e0						70 ns
K7A163609A-HC20	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			512KX36	512K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V		e0					22 mm	3.1 ns
K7P801811B-HC270	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm		9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED						22 mm	1.85 ns
K7R321882M-FC16000	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	166.66 MHz	15 mm	Not Qualified	37748736 bit	1.7 V		e1				.27 Amp	17 mm	.5 ns
KM718V895T-60	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	425 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	20 mm	3.5 ns
K7N803601B-QC13S	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100	1			133 MHz		Not Qualified	9437184 bit							.06 Amp		4.2 ns
K6R1008C1C-JI15T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	73 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0				.005 Amp		15 ns
K7J641882M-FC16T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	75497472 bit			e1						.5 ns
KM736V987H-90000	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			512KX36	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm
KM616V4002BIJ-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						25.58 mm	15 ns
K7R160884B-FC300	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			2MX8	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE						15 mm	.45 ns
K6T1008C2E-TB550	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V			30	240		.00001 Amp	18.4 mm	55 ns
K6T1008V2C-NB10	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V							11.8 mm	100 ns
KM616V1002CLJ-12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	28.58 mm	12 ns
K7P321888M-HC30	Samsung
KM6264AL-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES	.00005 Amp	36.45 mm	100 ns
K6X4008C1F-VB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32						Not Qualified	4194304 bit							.000012 Amp		70 ns
K7R160882B-FC25	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX8	2M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
K6F4016R4F-EF70	Samsung
K6T4008U1C-GF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	4194304 bit			e0						70 ns
K7N323645M-QC200	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			1MX36	1M		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE						20 mm	3.2 ns
K6T0808C1D-RL55T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0						55 ns
KM64V4002CJ-20	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.01 Amp	20.96 mm	20 ns
K7A401800M-QC14	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	375 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			138 MHz		Not Qualified	4718592 bit			e0				.03 Amp		4 ns
K7M163225A-QI850	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	16777216 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	8.5 ns
K7A401800A-QC15	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	390 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	149 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	3.8 ns
KM6164002BTI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	18.41 mm	12 ns
K7A403609A-QC27	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	540 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			275 MHz		Not Qualified	4718592 bit			e0				.05 Amp		2.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.