Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
RECTANGULAR |
-40 Cel |
AEC-Q101, HIGH SENSITIVITY |
.05 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
BULK |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
||
Laser Components |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
BULK |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
GOLD |
SINGLE |
5.9 mm |
30 nA |
1 |
NO |
565 |
BULK |
.0000035 s |
Photo Diodes |
125 Cel |
10 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.009 mA |
e4 |
||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Onsemi |
PIN PHOTODIODE |
SURFACE MOUNT |
TIN |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
DAYLIGHT FILTER |
.037 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
20 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.048 mA |
|||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
30 nA |
.00000035 s |
Photo Diodes |
20 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
|||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
TIN OVER NICKEL |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
850 |
100 Cel |
32 V |
SQUARE |
-40 Cel |
.05 mA |
e3 |
|||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
950 |
.000000125 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER |
.038 mA |
e3 |
|||
Infineon Technologies |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
30 nA |
.00000002 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
|||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
RECTANGULAR |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
|||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
TIN OVER NICKEL |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
880 |
100 Cel |
16 V |
SQUARE |
-40 Cel |
.023 mA |
e3 |
|||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
7.5 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY, SIDE VIEW |
.045 mA |
e3 |
|||
Infineon Technologies |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
30 nA |
.00000002 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
|||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
TIN OVER NICKEL |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
880 |
TR, 7 INCH |
16 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
AEC-Q101 |
.05 mA |
e3 |
|||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5 mm |
5 nA |
1 |
YES |
940 |
BULK |
.0000000025 s |
Photo Diodes |
60 V |
GaAs |
100 Cel |
60 V |
ROUND |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.055 mA |
e3 |
||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
5 nA |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
|||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
.00000002 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-55 Cel |
e0 |
||||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
MATTE TIN OVER NICKEL |
SINGLE |
1 mm |
5 nA |
1 |
YES |
900 |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
50 V |
SQUARE |
-40 Cel |
.0036 mA |
|||||
|
Onsemi |
PIN PHOTODIODE |
SURFACE MOUNT |
TIN |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
DAYLIGHT FILTER |
.037 mA |
e3 |
||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
5000 nA |
.00000001 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
|||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
||||||||||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
.00000002 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
||||||||||||||
|
Hamamatsu Photonics Kk |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
2.8 mm |
10 nA |
1 |
YES |
960 |
.000000005 s |
Photo Diodes |
30 V |
Silicon |
100 Cel |
30 V |
RECTANGULAR |
-40 Cel |
HIGH RELIABILITY, HIGH SENSITIVITY |
.0063 mA |
|||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
TIN OVER NICKEL |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
880 |
100 Cel |
16 V |
SQUARE |
-40 Cel |
.04 mA |
e3 |
|||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
1 mm |
5 nA |
1 |
YES |
900 |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
50 V |
SQUARE |
-40 Cel |
.0036 mA |
||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
TIN OVER NICKEL |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
850 |
.00000002 s |
Photo Diodes |
32 V |
100 Cel |
32 V |
SQUARE |
-40 Cel |
.05 mA |
e3 |
|||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
5 nA |
Photo Diodes |
50 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
||||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Hamamatsu Photonics Kk |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
1.2 mm |
1 nA |
1 |
YES |
900 |
Photo Diodes |
20 V |
Silicon |
100 Cel |
20 V |
ROUND |
-40 Cel |
HIGH RELIABILITY |
.001 mA |
||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
Tin (Sn) |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
950 |
100 Cel |
16 V |
RECTANGULAR |
-40 Cel |
.04 mA |
e3 |
|||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
.00000002 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-55 Cel |
e0 |
||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin (Sn) |
SINGLE |
1.9 mm |
10 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
85 Cel |
60 V |
ROUND |
-40 Cel |
DAYLIGHT FILTER |
e3 |
|||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
950 |
.00000002 s |
Photo Diodes |
16 V |
Silicon |
100 Cel |
16 V |
SQUARE |
-40 Cel |
.04 mA |
||||||
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
10 nA |
1 |
YES |
880 |
Photo Diodes |
50 V |
Silicon |
100 Cel |
50 V |
ROUND |
-40 Cel |
DAYLIGHT FILTER |
.025 mA |
e3 |
||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SINGLE |
1 mm |
5 nA |
1 |
YES |
850 |
100 Cel |
50 V |
SQUARE |
-40 Cel |
.006 mA |
|||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.035 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Silver (Ag) |
SINGLE |
4.5 mm |
30 nA |
1 |
YES |
940 |
.0000001 s |
Photo Diodes |
60 V |
GaAs |
100 Cel |
60 V |
ROUND |
-40 Cel |
DAY LIGHT FILTER, SIDE VIEW, HIGH SENSITIVITY |
.08 mA |
e4 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.035 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
5 mm |
5 nA |
1 |
YES |
920 |
.0000000025 s |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.07 mA |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.