Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
PIN PHOTODIODE |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
840 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
20 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.038 mA |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
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|
Marktech Optoelectronics |
PIN PHOTODIODE |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
4.985 mm |
60 nA |
1 |
YES |
.000000005 s |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
.0065 mA |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
30 nA |
1 |
YES |
880 |
Photo Diodes |
Silicon |
125 Cel |
35 V |
ROUND |
-55 Cel |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
30 nA |
1 |
YES |
880 |
Photo Diodes |
35 V |
Silicon |
125 Cel |
35 V |
SQUARE |
-55 Cel |
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Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
30 nA |
.00000002 s |
Photo Diodes |
20 V |
Silicon |
80 Cel |
-40 Cel |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2.2 mm |
30 nA |
1 |
YES |
850 |
.00000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
20 V |
SQUARE |
-40 Cel |
.04 mA |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.5 mm |
30 nA |
1 |
YES |
950 |
.0000001 s |
Photo Diodes |
Silicon |
100 Cel |
60 V |
ROUND |
-55 Cel |
SIDE VIEW |
.06 mA |
e3 |
||||
|
Hamamatsu Photonics Kk |
PIN PHOTODIODE |
SINGLE |
.3 mm |
4000 nA |
1 |
YES |
2300 |
85 Cel |
ROUND |
-40 Cel |
HIGH RELIABILITY, HIGH SENSITIVITY, LOW NOISE |
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|
Broadcom |
PIN PHOTODIODE |
Tin (Sn) |
SINGLE |
1.78 mm |
5 nA |
1 |
YES |
875 |
85 Cel |
40 V |
ROUND |
-40 Cel |
.0016 mA |
e3 |
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|
Broadcom |
PIN PHOTODIODE |
Tin (Sn) |
SINGLE |
1.78 mm |
5 nA |
1 |
YES |
875 |
85 Cel |
40 V |
ROUND |
-40 Cel |
.0016 mA |
e3 |
|||||||||
|
Tt Electronics Plc |
PIN PHOTODIODE |
RADIAL MOUNT |
SINGLE |
1.58 mm |
60 nA |
1 |
YES |
935 |
GaAlAs |
100 Cel |
60 V |
ROUND |
-40 Cel |
SIDE VIEW, RESPONDS FROM VISIBLE TO INFRARED RANGE |
.008 mA |
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|
Everlight Electronics |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
1.9 mm |
10 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
ROUND |
-25 Cel |
.004 mA |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
840 |
TR |
20 V |
Silicon |
85 Cel |
SQUARE |
-40 Cel |
.02 mA |
|||||||||
Infineon Technologies |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
2.73 mm |
30 nA |
1 |
YES |
850 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
SQUARE |
-40 Cel |
.0054 mA |
e3 |
||||||
United Detector Technology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.00000002 s |
Photo Diodes |
50 V |
Silicon |
125 Cel |
-55 Cel |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
.59 mm |
5 nA |
1 |
NO |
620 |
TR, 7 INCH |
16 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
.00057 mA |
||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
900 |
TR, 13 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
32 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.012 mA |
||||||
|
Everlight Electronics |
PIN PHOTODIODE |
SINGLE |
30 nA |
1 |
YES |
940 |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
DAYLIGHT FILTER |
.035 mA |
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|
ROHM |
PIN PHOTODIODE |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
900 |
TR, 13 INCH |
60 V |
Silicon |
100 Cel |
32 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.01 mA |
|||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
3 mm |
3 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.027 mA |
e3 |
||||
Motorola |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.735 mm |
2 nA |
1 |
.000000001 s |
Photo Diodes |
100 V |
Silicon |
125 Cel |
100 V |
ROUND |
-55 Cel |
RESPONDS FROM VISIBLE TO INFRARED RANGE |
.0021 mA |
e0 |
||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4 mm |
10 nA |
1 |
YES |
900 |
.000000007 s |
Photo Diodes |
Silicon |
125 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.06 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
6.4 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
GaAs |
80 Cel |
60 V |
RECTANGULAR |
-30 Cel |
HIGH SENSITIVITY |
.038 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2 mm |
3 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.003 mA |
||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.035 mA |
e3 |
||||
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
Photo Diodes |
30 V |
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|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
10 nA |
1 |
YES |
880 |
Photo Diodes |
50 V |
Silicon |
100 Cel |
50 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.015 mA |
e3 |
||||
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.00000002 s |
Photo Diodes |
30 V |
70 Cel |
-20 Cel |
||||||||||||||||
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
5.26 mm |
30 nA |
1 |
YES |
920 |
.00000005 s |
Photo Diodes |
32 V |
85 Cel |
32 V |
RECTANGULAR |
-40 Cel |
DAYLIGHT FILTER |
.03 mA |
e3 |
||||
|
Onsemi |
PIN PHOTODIODE |
SURFACE MOUNT |
TIN |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
DAYLIGHT FILTER |
.037 mA |
e3 |
||||
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
Photo Diodes |
30 V |
|||||||||||||||||||
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
7.6 mm |
30 nA |
1 |
YES |
940 |
.00000005 s |
Photo Diodes |
32 V |
85 Cel |
32 V |
RECTANGULAR |
-40 Cel |
DAYLIGHT FILTER |
.03 mA |
e3 |
||||
Onsemi |
PIN PHOTODIODE |
|||||||||||||||||||||||
Onsemi |
PIN PHOTODIODE |
|||||||||||||||||||||||
Onsemi |
PIN PHOTODIODE |
|||||||||||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.54 mm |
10 nA |
1 |
YES |
1250 |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
ROUND |
-40 Cel |
e0 |
|||||||
Infineon Technologies |
PIN PHOTODIODE |
SINGLE |
3.15 mm |
.002 nA |
1 |
RECTANGULAR |
RESPONDS FROM VISIBLE TO INFRARED RANGE |
.045 mA |
||||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
|||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
|||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
Photo Diodes |
60 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
100 nA |
1 |
.000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
ROUND |
-50 Cel |
.1 mA |
e0 |
|||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
10 nA |
.000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
-50 Cel |
|||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.675 mm |
50 nA |
1 |
.00000000000025 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
20 V |
ROUND |
-40 Cel |
e0 |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.