Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Nominal Supply Voltage | Packing Method | Maximum Response Time | Sub-Category | Maximum Operating Temperature | Shape | Minimum Operating Temperature | Minimum Collector-emitter Breakdown Voltage | Maximum Power Dissipation | Additional Features | Nominal Light Current | JESD-609 Code | Maximum On State Current |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3 mm |
100 nA |
1 |
NO |
720 |
75 Cel |
ROUND |
-20 Cel |
20 V |
.06 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.65 mm |
100 nA |
1 |
NO |
720 |
85 Cel |
ROUND |
-25 Cel |
20 V |
.02 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3 mm |
100 nA |
1 |
NO |
720 |
75 Cel |
ROUND |
-20 Cel |
20 V |
.02 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3 mm |
100 nA |
1 |
YES |
870 |
75 Cel |
ROUND |
-20 Cel |
20 V |
.024 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
Tin/Lead (Sn/Pb) |
SINGLE |
3 mm |
100 nA |
1 |
75 Cel |
ROUND |
-20 Cel |
20 V |
TTL COMPATIBLE |
.01 mA |
e0 |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
4.7 mm |
200 nA |
1 |
YES |
800 |
125 Cel |
ROUND |
-40 Cel |
40 V |
HIGH SENSITIVITY |
.4 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
4.7 mm |
200 nA |
1 |
YES |
800 |
125 Cel |
ROUND |
-40 Cel |
40 V |
HIGH SENSITIVITY |
.2 mA |
|||||||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.01 mA |
.02 A |
|||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.017 mA |
.02 A |
|||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.017 mA |
.02 A |
|||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
5 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
75 Cel |
ROUND |
-20 Cel |
30 V |
.15 W |
HIGH SENSITIVITY |
.12 mA |
.05 A |
||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
870 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.055 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
800 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.02 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.65 mm |
100 nA |
1 |
NO |
720 |
85 Cel |
ROUND |
-25 Cel |
20 V |
DOUBLE END |
.04 mA |
|||||||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
4.7 mm |
200 nA |
1 |
YES |
800 |
Photo Transistors |
125 Cel |
ROUND |
-40 Cel |
40 V |
.15 W |
HIGH SENSITIVITY |
.1 mA |
.05 A |
||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
870 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.027 mA |
|||||||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
870 |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
30 V |
.075 W |
.027 mA |
.05 A |
|||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.01 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3 mm |
100 nA |
1 |
NO |
720 |
Photo Transistors |
75 Cel |
ROUND |
-20 Cel |
20 V |
.02 mA |
||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
820 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.08 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.01 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.03 mA |
||||||||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.01 mA |
.02 A |
|||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
800 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.034 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
85 Cel |
ROUND |
-30 Cel |
30 V |
.017 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3 mm |
100 nA |
1 |
YES |
870 |
75 Cel |
ROUND |
-20 Cel |
20 V |
.014 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
820 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.04 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
3 mm |
100 nA |
1 |
YES |
870 |
75 Cel |
ROUND |
-20 Cel |
20 V |
.014 mA |
||||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
870 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.027 mA |
|||||||||||
|
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
900 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.01 mA |
.02 A |
|||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
870 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.055 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
800 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.034 mA |
.02 A |
||||||||
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.7 mm |
200 nA |
1 |
YES |
800 |
Photo Transistors |
125 Cel |
ROUND |
-40 Cel |
40 V |
HIGH SENSITIVITY |
.2 mA |
e0 |
.05 A |
||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.65 mm |
100 nA |
1 |
NO |
720 |
85 Cel |
ROUND |
-25 Cel |
20 V |
DOUBLE END |
.01 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
1.5 mm |
100 nA |
1 |
YES |
820 |
85 Cel |
ROUND |
-25 Cel |
30 V |
SIDE VIEW |
.04 mA |
|||||||||||
Toshiba |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.1 mm |
100 nA |
1 |
YES |
800 |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.075 W |
.02 mA |
.02 A |
||||||||
Toshiba |
PHOTO TRANSISTOR |
SINGLE |
4.7 mm |
200 nA |
1 |
YES |
800 |
125 Cel |
ROUND |
-40 Cel |
40 V |
HIGH SENSITIVITY |
.1 mA |
|||||||||||
Renesas Electronics |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
3.8 mm |
200 nA |
1 |
.000005 s |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.1 W |
HIGH SENSITIVITY |
.18 mA |
e0 |
.04 A |
||||||
Renesas Electronics |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
5 mm |
100 nA |
1 |
780 |
Photo Transistors |
100 Cel |
RECTANGULAR |
30 V |
.1 W |
.02 mA |
e0 |
.04 A |
||||||||
Renesas Electronics |
PHOTO TRANSISTOR |
SINGLE |
100 nA |
1 |
YES |
85 Cel |
ROUND |
-30 Cel |
30 V |
.2 mA |
||||||||||||||
Renesas Electronics |
PHOTO TRANSISTOR |
Tin/Lead (Sn/Pb) |
SINGLE |
100 nA |
1 |
YES |
ROUND |
30 V |
.6 mA |
e0 |
||||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
5 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
|||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
||||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
5 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
|||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
1.6 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
|||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
5 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
|||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Tin (Sn) |
SINGLE |
5 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
|||||||||||||
|
Broadcom |
PHOTO TRANSISTOR |
Matte Tin (Sn) |
SINGLE |
5 mm |
1 |
YES |
85 Cel |
ROUND |
-40 Cel |
e3 |
A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.
Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.