DPDT Multiplexers & Switches 380

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Part	Manufacturer	Other IC type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Surface Mount	Package Body Material	Maximum Supply Current (Isup)	No. of Functions	No. of Channels	Technology	Nominal Bandwidth	Terminal Form	Nominal Supply Voltage (Vsup)	Power Supplies (V)	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Output (V)	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Signal Current	Width (mm)	Qualification	Normal Position (V)	Nominal Off-state Isolation	Minimum Supply Voltage (Vsup)	Additional Features	Minimum Input Voltage	JESD-609 Code	Switching (V)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Switch-on Time	Maximum On-state Resistance (Ron)	Maximum Switch-off Time	Nominal On-state Resistance Match	Length	Maximum Input Voltage
FSUSB42MUX	Onsemi	DPDT	INDUSTRIAL	10	TSSOP	SQUARE	YES	PLASTIC/EPOXY		1	4			GULL WING	3.3 V	3/4.3	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP10,.19,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-G10	SEPARATE OUTPUT	1	4.3 V	1.1 mm		3 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	6.5 ohm	25 ns	.65 ohm	3 mm
FSUSB42UMX	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	4			NO LEAD	3.3 V	3/4.3	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.4 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	6.5 ohm	25 ns	.65 ohm	1.8 mm
FSUSB30MUX	Onsemi	DPDT	INDUSTRIAL	10	TSSOP	SQUARE	YES	PLASTIC/EPOXY		1	2			GULL WING	3.3 V	3.3	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP10,.19,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-G10	SEPARATE OUTPUT	1	4.3 V	1.1 mm		3 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	10 ohm	25 ns	.35 ohm	3 mm
FSA221L10X	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3/4.2,5	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.08,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	3.6 V	.55 mm		1.6 mm	Not Qualified		37 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	10000 ns	5 ohm	10000 ns	.4 ohm	2.1 mm
FSA4476UCX	Onsemi	DPDT	INDUSTRIAL	25	UFBGA	SQUARE	YES	PLASTIC/EPOXY		1	2			BALL			GRID ARRAY, ULTRA THIN PROFILE, FINE PITCH	BGA24,5X5,20		.4 mm	85 Cel	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B25		1	5.5 V	.625 mm		2 mm			100 dB	2.7 V			e1	BREAK-BEFORE-MAKE	30	260					2 mm
MAX14757EUE+T	Analog Devices	DPDT	INDUSTRIAL	16	TSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		4		BICMOS		GULL WING		3.3,10/70/+-35	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP16,.25	Multiplexer or Switches	.635 mm	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G16	SEPARATE OUTPUT	1					Not Qualified	NO					e3	BREAK-BEFORE-MAKE	30	260	60000 ns	10 ohm
FSA221UMX	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3/4.2,5	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	3.6 V	.55 mm		1.4 mm	Not Qualified		37 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	10000 ns	5 ohm	10000 ns	.4 ohm	1.8 mm
ADG888YRUZ	Analog Devices	DPDT	AUTOMOTIVE	16	TSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		2	1	CMOS		GULL WING	2.7 V	3/5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP16,.25	Multiplexer or Switches	.65 mm	125 Cel	-40 Cel	MATTE TIN	DUAL	R-PDSO-G16	SEPARATE OUTPUT	1	5.5 V	1.2 mm		4.4 mm	Not Qualified		67 dB	1.8 V			e3	BREAK-BEFORE-MAKE	30	260	50 ns	.7 ohm	22 ns	.045 ohm	5 mm
TS3USB3000RSER	Texas Instruments	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	PLASTIC/EPOXY	.05 mA	1	2		6100 kHz	NO LEAD	3.3 V		CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-PQCC-N10	SEPARATE OUTPUT	1	4.3 V	.6 mm		1.5 mm			34 dB	2.7 V		0 V	e4	BREAK-BEFORE-MAKE	30	260		9 ohm		.1 ohm	2 mm	3.6 V
FSUSB30UMX	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3.3	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.4 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	10 ohm	25 ns	.35 ohm	1.8 mm
FSA2466UMX	Onsemi	DPDT	INDUSTRIAL	16	QCCN	RECTANGULAR	YES	PLASTIC/EPOXY		1		CMOS		NO LEAD		1.8/4	CHIP CARRIER	LCC16,.07X.1,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-PQCC-N16	SEPARATE OUTPUT	1					Not Qualified						e4	BREAK-BEFORE-MAKE	30	260	80 ns	6 ohm
FSA221MUX	Onsemi	DPDT	INDUSTRIAL	10	TSSOP	SQUARE	YES	PLASTIC/EPOXY		1	2			GULL WING	3.3 V	3/4.2,5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP10,.19,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-G10	SEPARATE OUTPUT	1	3.6 V	1.1 mm		3 mm	Not Qualified		37 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	10000 ns	5 ohm	10000 ns	.4 ohm	3 mm
ADG888YRUZ-REEL7	Analog Devices	DPDT	AUTOMOTIVE	16	TSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		2	1	CMOS		GULL WING	2.7 V	3/5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP16,.25	Multiplexer or Switches	.65 mm	125 Cel	-40 Cel	MATTE TIN	DUAL	R-PDSO-G16	SEPARATE OUTPUT	1	5.5 V	1.2 mm		4.4 mm	Not Qualified		67 dB	1.8 V			e3	BREAK-BEFORE-MAKE	30	260	50 ns	.7 ohm	22 ns	.045 ohm	5 mm
FSA223UMX	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3 V	3/5	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	5.5 V	.55 mm		1.4 mm	Not Qualified			2.7 V			e4		30	260	2000 ns	6 ohm	2000 ns	.4 ohm	1.8 mm
ADG888YCPZ-REEL7	Analog Devices	DPDT	AUTOMOTIVE	16	HVQCCN	SQUARE	YES	UNSPECIFIED		2	1	CMOS		NO LEAD	2.7 V	3/5	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC16,.16SQ,25	Multiplexer or Switches	.65 mm	125 Cel	-40 Cel	MATTE TIN	QUAD	S-XQCC-N16	SEPARATE OUTPUT	3	5.5 V	1 mm		4 mm	Not Qualified		67 dB	1.8 V			e3	BREAK-BEFORE-MAKE		260	50 ns	.7 ohm	22 ns	.045 ohm	4 mm
NX3DV42GU,115	NXP Semiconductors	DPDT	AUTOMOTIVE	10	VQCCN	RECTANGULAR	YES	PLASTIC/EPOXY		1	2			NO LEAD	3.3 V	3/4.3	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	125 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-PQCC-N10	SEPARATE OUTPUT	1	4.3 V	.5 mm		1.4 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	40 ns	10 ohm	30 ns	.65 ohm	1.8 mm
ADG888YRUZ-REEL	Analog Devices	DPDT	AUTOMOTIVE	16	TSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		2	1	CMOS		GULL WING	2.7 V	3/5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP16,.25	Multiplexer or Switches	.65 mm	125 Cel	-40 Cel	MATTE TIN	DUAL	R-PDSO-G16	SEPARATE OUTPUT	1	5.5 V	1.2 mm		4.4 mm	Not Qualified		67 dB	1.8 V			e3	BREAK-BEFORE-MAKE	30	260	50 ns	.7 ohm	22 ns	.045 ohm	5 mm
FSA201MUX	Onsemi	DPDT	INDUSTRIAL	10	TSSOP	SQUARE	YES	PLASTIC/EPOXY		1	2			GULL WING	3.3 V	3.3,5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP10,.19,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel		DUAL	S-PDSO-G10	SEPARATE OUTPUT	1	3.6 V	1.1 mm		3 mm	Not Qualified		37 dB	2.7 V					30	260	10000 ns	1 ohm	10000 ns	.01 ohm	3 mm
NL3S22AHMUTAG	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10		1	3.7 V	.6 mm		1.4 mm			25 dB	2.7 V			e4		30	260		6.63 ohm		.2 ohm	1.8 mm
NCN9252MUTAG	Onsemi	DPDT	INDUSTRIAL	12	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2			NO LEAD	3.3 V	3.3	CHIP CARRIER, VERY THIN PROFILE	LCC12,.07X.08,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N12	SEPARATE OUTPUT	1	4.5 V	.55 mm		1.7 mm	Not Qualified		60 dB	1.65 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	6 ohm	25 ns	.35 ohm	2 mm
FSUSB30L10X	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3.3	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.08,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.6 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	10 ohm	25 ns	.35 ohm	2.1 mm
MAX14508EEVB+T	Analog Devices	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2	BICMOS		NO LEAD	3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL GOLD PALLADIUM	QUAD	R-XQCC-N10		1	5 V	.55 mm		1.4 mm			65 dB	2.7 V					30	260	60000 ns	5 ohm	5000 ns	.2 ohm	1.8 mm
MAX14689AETB+T	Analog Devices	DPDT	INDUSTRIAL	10	HVSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		1	2	BICMOS		GULL WING	2.5 V		SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH			.4 mm	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G10		1	5.5 V	.8 mm		2 mm			60 dB	1.6 V			e3		30	260	250000 ns	.55 ohm	30000 ns	.005 ohm	2.5 mm
NLAS3899BMNTBG	Onsemi	DPDT	INDUSTRIAL	16	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2			NO LEAD	3 V	1.8/4	CHIP CARRIER, VERY THIN PROFILE	LCC16,.07X.1,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N16	SEPARATE OUTPUT	1	4.3 V	.8 mm		1.8 mm	Not Qualified		67 dB	1.65 V			e4	BREAK-BEFORE-MAKE	30	260	40 ns	3 ohm	30 ns	.8 ohm	2.6 mm
TS3USB32008RSVR	Texas Instruments	DPDT	INDUSTRIAL	16	VQCCN	RECTANGULAR	YES	PLASTIC/EPOXY	.07 mA	1	2		5500 kHz	NO LEAD	3.3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-PQCC-N16	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.8 mm			37 dB	2.7 V		0 V	e4		30	260	400 ns		400 ns	.4 ohm	2.6 mm	3.6 V
MAX14575BETA+T	Analog Devices	DPDT	INDUSTRIAL	8	HVSON	SQUARE	YES	PLASTIC/EPOXY	.275 mA	1	2	BICMOS		NO LEAD	3.3 V	2.5/5	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08,20	Power Management Circuits	.5 mm	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	DUAL	S-PDSO-N8		1	5.5 V	.8 mm		2 mm	Not Qualified			2.3 V			e3		30	260		.05 ohm			2 mm
MAX14689EWL+T	Analog Devices	DPDT	INDUSTRIAL	9	FBGA	SQUARE	YES	PLASTIC/EPOXY		1		BICMOS		BALL		1.8/5	GRID ARRAY, FINE PITCH	BGA9,3X3,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	TIN SILVER COPPER NICKEL	BOTTOM	S-PBGA-B9	SEPARATE OUTPUT	1					Not Qualified						e2	BREAK-BEFORE-MAKE	30	260	250000 ns	.55 ohm
FSUSB45UMX	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3/4.3	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.4 mm	Not Qualified		30 dB	3 V			e4	BREAK-BEFORE-MAKE	30	260	30 ns	6.5 ohm	25 ns	.65 ohm	1.8 mm
DG2037DS-T1-E3	Vishay Intertechnology	DPDT	INDUSTRIAL	8	TSSOP	RECTANGULAR	YES	PLASTIC/EPOXY		2		CMOS		GULL WING		3/5	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.1	Multiplexer or Switches	.635 mm	85 Cel	-40 Cel	MATTE TIN	DUAL	R-PDSO-G8	SEPARATE OUTPUT	1					Not Qualified	NO					e3	BREAK-BEFORE-MAKE	30	260	35 ns	7 ohm
ADG888BCBZ-REEL	Analog Devices	DPDT	INDUSTRIAL	16	VFBGA	SQUARE	YES	PLASTIC/EPOXY		2	1	CMOS		BALL	2.7 V	3/5	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X4,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B16	SEPARATE OUTPUT	1	5.5 V	.65 mm		2 mm	Not Qualified		67 dB	1.8 V			e1	BREAK-BEFORE-MAKE		260	50 ns	.7 ohm	22 ns	.045 ohm	2 mm
ADG888BCBZ-REEL7	Analog Devices	DPDT	INDUSTRIAL	16	VFBGA	SQUARE	YES	PLASTIC/EPOXY		2	1	CMOS		BALL	2.7 V	3/5	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X4,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B16	SEPARATE OUTPUT	1	5.5 V	.65 mm		2 mm	Not Qualified		67 dB	1.8 V			e1	BREAK-BEFORE-MAKE	30	260	50 ns	.7 ohm	22 ns	.045 ohm	2 mm
ADG888YCPZ-REEL	Analog Devices	DPDT	AUTOMOTIVE	16	HVQCCN	SQUARE	YES	UNSPECIFIED		2	1	CMOS		NO LEAD	2.7 V	3/5	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC16,.16SQ,25	Multiplexer or Switches	.65 mm	125 Cel	-40 Cel	MATTE TIN	QUAD	S-XQCC-N16	SEPARATE OUTPUT	3	5.5 V	1 mm		4 mm	Not Qualified		67 dB	1.8 V			e3	BREAK-BEFORE-MAKE		260	50 ns	.7 ohm	22 ns	.045 ohm	4 mm
FSA201L10X	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2			NO LEAD	3.3 V	3.3,5	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.08,20	Multiplexer or Switches	.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	3.6 V	.55 mm		1.6 mm	Not Qualified		37 dB	2.7 V			e4		30	260	10000 ns	1 ohm	10000 ns	.01 ohm	2.1 mm
MAX4983EEVB+TG0Y	Maxim Integrated	DPDT																					NICKEL GOLD PALLADIUM				1													30	260
NLAS44599MN	Onsemi	DPDT	MILITARY	16	HVQCCN	SQUARE	YES	UNSPECIFIED		2	2	CMOS		NO LEAD	2.5 V	2/5.5	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC16,.12SQ,20	Multiplexer or Switches	.5 mm	125 Cel	-55 Cel	TIN LEAD	QUAD	S-XQCC-N16	SEPARATE OUTPUT		5.5 V	1 mm		3 mm	Not Qualified		93 dB	2 V			e0	BREAK-BEFORE-MAKE		235	41 ns	105 ohm	18 ns		3 mm
NLAST44599MN	Onsemi	DPDT	MILITARY	16	HVQCCN	SQUARE	YES	UNSPECIFIED		2	2	CMOS		NO LEAD	2.5 V	2.5/5	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC16,.12SQ,20	Multiplexer or Switches	.5 mm	125 Cel	-55 Cel	TIN LEAD	QUAD	S-XQCC-N16	SEPARATE OUTPUT		5.5 V	1 mm		3 mm	Not Qualified	NC	93 dB	2 V			e0	BREAK-BEFORE-MAKE		235	35 ns	105 ohm	12 ns		3 mm
FSA2457UMX	Onsemi	DPDT	INDUSTRIAL	16	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	1			NO LEAD	3.3 V	3/3.3	CHIP CARRIER, VERY THIN PROFILE	LCC16,.07X.1,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N16	SEPARATE OUTPUT	1	3.6 V	.55 mm		1.8 mm	Not Qualified		45 dB	2.7 V			e4	BREAK-BEFORE-MAKE	30	260	7 ns	7 ohm	4 ns	.3 ohm	2.6 mm
MAX14509AEEVB+T	Analog Devices	DPDT																					NICKEL GOLD PALLADIUM				1													30	260
NLAS9431MTR2G	Onsemi	DPDT	MILITARY	16	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2	CMOS		NO LEAD	2.5 V	2/5.5	CHIP CARRIER, VERY THIN PROFILE	LCC16,.07X.1,16	Multiplexer or Switches	.4 mm	125 Cel	-55 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N16	SEPARATE OUTPUT	1	5.5 V	.8 mm		1.8 mm	Not Qualified		93 dB	2 V	CAN BE USED AS QUAD 2-TO-1 MULTIPLEXER-DEMULTIPLEXER		e4	BREAK-BEFORE-MAKE		260	41 ns	105 ohm	18 ns		2.6 mm
PI3A3899ZTAEX	Diodes Incorporated	DPDT		16	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2			NO LEAD	2.7 V		CHIP CARRIER, VERY THIN PROFILE	LCC16,.1X.07,16		.4 mm	85 Cel	-40 Cel		QUAD	R-XQCC-N16	SEPARATE OUTPUT		4.3 V	.55 mm	.4 A	1.8 mm			67 dB	1.65 V		0 V		BREAK-BEFORE-MAKE				3.6 ohm		.2 ohm	2.6 mm	4.3 V
TS3USB3200RSVR	Texas Instruments	DPDT	INDUSTRIAL	16	VQCCN	RECTANGULAR	YES	PLASTIC/EPOXY	.07 mA	1	2		5500 kHz	NO LEAD	3.3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-PQCC-N16	SEPARATE OUTPUT	1	4.3 V	.55 mm		1.8 mm			37 dB	2.7 V		0 V	e4		30	260	400 ns		400 ns	.4 ohm	2.6 mm	3.6 V
DG2523DN-T1-GE4	Vishay Intertechnology	DPDT	INDUSTRIAL	16	HVQCCN	SQUARE	YES	UNSPECIFIED		1	4			NO LEAD	3 V		CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	-40 Cel		QUAD	S-XQCC-N16			5.5 V	1 mm		3 mm			82 dB	1.8 V							70000 ns	.55 ohm	3000 ns	.05 ohm	3 mm
MAX14509AEEVB+	Analog Devices	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		1	2	BICMOS		NO LEAD	3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL GOLD PALLADIUM	QUAD	R-XQCC-N10		1	5 V	.55 mm		1.4 mm			65 dB	2.7 V					30	260	60000 ns	5 ohm	5000 ns	.2 ohm	1.8 mm
MAX4983EEVB+	Analog Devices	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2	BICMOS		NO LEAD	3 V	3/5	CHIP CARRIER, VERY THIN PROFILE	LCC10,.06X.07,16	Multiplexer or Switches	.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10	SEPARATE OUTPUT	1	5.5 V	.55 mm		1.4 mm	Not Qualified		48 dB	2.8 V	VIDEO APPLICATION		e4		30	260	100000 ns	10 ohm	5000 ns	.1 ohm	1.8 mm
MAX4983EEVB+G0Y	Maxim Integrated	DPDT																					NICKEL GOLD PALLADIUM				1													30	260
NL3S588MUTBG	Onsemi	DPDT	INDUSTRIAL	10	VQCCN	RECTANGULAR	YES	UNSPECIFIED		2	2			NO LEAD	3.3 V		CHIP CARRIER, VERY THIN PROFILE			.4 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	R-XQCC-N10		1	3.6 V	.6 mm		1.4 mm			70 dB	3 V			e4		30	260				.046 ohm	1.8 mm
TS3USB31RSER	Texas Instruments	DPDT	INDUSTRIAL	8	VQCCN	SQUARE	YES	PLASTIC/EPOXY	.001 mA	1	2		1220 kHz	NO LEAD	3.3 V		CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD	S-PQCC-N8	SEPARATE OUTPUT	1	4.3 V	.6 mm		1.5 mm	Not Qualified	NC	30 dB	3 V		0 V	e4	BREAK-BEFORE-MAKE	30	260	30 ns	10 ohm	25 ns	.35 ohm	1.5 mm	4.3 V
DG2788ADN-T1-GE4	Vishay Intertechnology	DPDT																																						NOT SPECIFIED	NOT SPECIFIED

Multiplexers & Switches

Multiplexers and switches are electronic components used in digital and analog circuits to route signals between different inputs and outputs. They allow a single input signal to be sent to multiple output channels or vice versa.

A multiplexer, also known as a "mux," is a digital component that selects one of several input signals and forwards it to a single output. Multiplexers are often used in data communication systems to transmit multiple signals over a single communication channel. They can also be used in digital circuits to route control signals and address lines.

A switch is an electronic component that connects or disconnects two or more circuits. Switches can be mechanical or electronic and are used to control the flow of current in a circuit. In digital circuits, switches are used to connect or disconnect components and can be used to create logic gates and other digital components.

Multiplexers and switches are important components in various electronic systems, including communication systems, data processing systems, and control systems. They can be used to route signals between different parts of a circuit and to switch between different modes of operation. Multiplexers and switches can also be used to improve the efficiency of a system by reducing the number of components needed to perform a particular function.