DPDT Multiplexers & Switches 380

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Part RoHS Manufacturer Other IC type Temperature Grade No. of Terminals Package Code Package Shape Surface Mount Total Dose (V) Maximum Switching Frequency Package Body Material Maximum Supply Current (Isup) No. of Functions No. of Channels Technology Screening Level Nominal Bandwidth Terminal Form Maximum Negative Supply Voltage (Vsup) Nominal Negative Supply Voltage (Vsup) Nominal Supply Voltage (Vsup) Power Supplies (V) Package Style (Meter) Package Equivalence Code Sub-Category Terminal Pitch Maximum Operating Temperature Control Mode Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Output (V) Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Signal Current Height Width (mm) Qualification Normal Position (V) Nominal Off-state Isolation Minimum Supply Voltage (Vsup) Additional Features Minimum Input Voltage Minimum Negative Supply Voltage (Vsup) JESD-609 Code Switching (V) Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Switch-on Time Maximum On-state Resistance (Ron) Nominal Threshold Voltage (V) Maximum Switch-off Time Maximum Positive Input Voltage Nominal On-state Resistance Match Length Adjustable Threshold Maximum Input Voltage

FSUSB43L10X-F131

Fairchild Semiconductor

DPDT

INDUSTRIAL

10

QCCN

RECTANGULAR

YES

PLASTIC/EPOXY

1

NO LEAD

3/4.3

CHIP CARRIER

LCC10,.06X.08,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQCC-N10

SEPARATE OUTPUT

1

Not Qualified

e4

BREAK-BEFORE-MAKE

30

260

6.5 ohm

MAX14689EWL+

Analog Devices

DPDT

INDUSTRIAL

9

FBGA

SQUARE

YES

PLASTIC/EPOXY

1

BICMOS

BALL

1.8/5

GRID ARRAY, FINE PITCH

BGA9,3X3,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

TIN SILVER COPPER NICKEL

BOTTOM

S-PBGA-B9

SEPARATE OUTPUT

1

Not Qualified

e2

BREAK-BEFORE-MAKE

30

260

.55 ohm

NLAS3799LMNR2G

Onsemi

DPDT

INDUSTRIAL

16

VQCCN

RECTANGULAR

YES

UNSPECIFIED

2

2

NO LEAD

3 V

1.8/3.3

CHIP CARRIER, VERY THIN PROFILE

LCC16,.07X.1,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-XQCC-N16

SEPARATE OUTPUT

1

3.6 V

.8 mm

1.8 mm

Not Qualified

NC

69 dB

1.65 V

e4

BREAK-BEFORE-MAKE

260

50 ns

.5 ohm

30 ns

.05 ohm

2.6 mm

NX3DV3899GU,115

NXP Semiconductors

DPDT

AUTOMOTIVE

16

QCCN

RECTANGULAR

YES

PLASTIC/EPOXY

2

NO LEAD

1.4/4.3

CHIP CARRIER

LCC16,.07X.1,16

Multiplexer or Switches

.4 mm

125 Cel

-40 Cel

MATTE TIN

QUAD

R-PQCC-N16

SEPARATE OUTPUT

1

Not Qualified

e3

BREAK-BEFORE-MAKE

30

260

90 ns

10 ohm

TS5USBA224RSWR

Texas Instruments

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

.01 mA

1

2

650 kHz

NO LEAD

3.3 V

CHIP CARRIER, VERY THIN PROFILE

.4 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-XQCC-N10

COMMON OUTPUT

1

5.5 V

1 mm

1.4 mm

Not Qualified

NO

83 dB

2.7 V

0 V

e4

BREAK-BEFORE-MAKE

30

260

7 ohm

4 ohm

1.8 mm

5.5 V

FSA3000L10X

Onsemi

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

2

2

NO LEAD

3/4

CHIP CARRIER, VERY THIN PROFILE

LCC10,.06X.08,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-XQCC-N10

SEPARATE OUTPUT

1

.55 mm

1.6 mm

Not Qualified

e4

BREAK-BEFORE-MAKE

30

260

6 ohm

2.1 mm

FSA3000L10X_F131

Onsemi

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

2

2

NO LEAD

3.3 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

BOTTOM

R-XBCC-N10

1

4.3 V

.6 mm

1.6 mm

55 dB

2.7 V

SBG IS SPDT

30

260

600 ns

6 ohm

300 ns

.03 ohm

2.1 mm

NX3DV42GU10X

NXP Semiconductors

DPDT

AUTOMOTIVE

10

QCCN

RECTANGULAR

YES

PLASTIC/EPOXY

1

NO LEAD

3/4.3

CHIP CARRIER

LCC10,.05X.06,16

Multiplexer or Switches

.4 mm

125 Cel

-40 Cel

QUAD

R-PQCC-N10

SEPARATE OUTPUT

1

Not Qualified

BREAK-BEFORE-MAKE

260

10 ohm

MAX14589EEWL+T

Analog Devices

DPDT

INDUSTRIAL

9

VFBGA

SQUARE

YES

PLASTIC/EPOXY

.06 mA

1

2

BICMOS

BALL

2.5 V

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA9,3X3,16

.4 mm

85 Cel

-40 Cel

TIN SILVER COPPER NICKEL

BOTTOM

S-PBGA-B9

COMMON OUTPUT

1

5.5 V

.69 mm

1.26 mm

NC

60 dB

1.6 V

-5.5 V

e2

BREAK-BEFORE-MAKE

30

260

10000000 ns

.38 ohm

2250000 ns

.005 ohm

1.26 mm

5.5 V

NX3L2467HR,115

NXP Semiconductors

DPDT

AUTOMOTIVE

16

QCCN

SQUARE

YES

PLASTIC/EPOXY

2

CMOS

NO LEAD

1.5/3.3

CHIP CARRIER

LCC16,.12SQ,20

Multiplexer or Switches

.5 mm

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

S-PQCC-N16

SEPARATE OUTPUT

1

Not Qualified

e4

BREAK-BEFORE-MAKE

30

260

90 ns

4.1 ohm

BD11600NUX-E2

ROHM

DPDT

INDUSTRIAL

10

HVSON

RECTANGULAR

YES

PLASTIC/EPOXY

1

2

NO LEAD

5 V

5

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC10,.08,20

Multiplexers or Switches

.5 mm

85 Cel

-40 Cel

DUAL

R-PDSO-N10

SEPARATE OUTPUT

5.5 V

.6 mm

2 mm

Not Qualified

2.5 V

NOT SPECIFIED

NOT SPECIFIED

6 ohm

3 mm

HI1-5046A7

Thomson Consumer Electronics

DPDT

COMMERCIAL EXTENDED

16

DIP

RECTANGULAR

NO

CERAMIC, GLASS-SEALED

1

2

CMOS

THROUGH-HOLE

-15 V

15 V

5,+-15

IN-LINE

DIP16,.3

Multiplexer or Switches

2.54 mm

75 Cel

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-GDIP-T16

SEPARATE OUTPUT

Not Qualified

e0

BREAK-BEFORE-MAKE

1000 ns

50 ohm

TS3USB31ERSER

Texas Instruments

DPDT

INDUSTRIAL

8

VQCCN

SQUARE

YES

PLASTIC/EPOXY

.001 mA

1

2

1100 kHz

NO LEAD

2.5 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

QUAD

S-PQCC-N8

SEPARATE OUTPUT

1

4.3 V

.6 mm

1.5 mm

Not Qualified

NC

30 dB

2.25 V

0 V

e4

BREAK-BEFORE-MAKE

30

260

30 ns

10 ohm

25 ns

.4 ohm

1.5 mm

4.3 V

TS3USB3000RLSR

Texas Instruments

DPDT

TS3USB31RSERG4

Texas Instruments

DPDT

INDUSTRIAL

8

VQCCN

SQUARE

YES

PLASTIC/EPOXY

.001 mA

1

2

1220 kHz

NO LEAD

3.3 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

QUAD

S-PQCC-N8

SEPARATE OUTPUT

1

4.3 V

.6 mm

1.5 mm

Not Qualified

NC

30 dB

3 V

0 V

e4

BREAK-BEFORE-MAKE

30

260

30 ns

10 ohm

25 ns

.35 ohm

1.5 mm

4.3 V

TS3USB3000MRSER

Texas Instruments

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

PLASTIC/EPOXY

.05 mA

1

2

6100 kHz

NO LEAD

3.3 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQCC-N10

SEPARATE OUTPUT

1

4.3 V

.6 mm

1.5 mm

34 dB

2.7 V

0 V

e4

BREAK-BEFORE-MAKE

30

260

9 ohm

.1 ohm

2 mm

3.6 V

ADG888YCBZ-REEL

Analog Devices

DPDT

AUTOMOTIVE

16

VFBGA

SQUARE

YES

UNSPECIFIED

2

1

CMOS

BALL

2.7 V

3/5

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA16,4X4,20

Multiplexer or Switches

.5 mm

125 Cel

-40 Cel

BOTTOM

S-XBGA-B16

SEPARATE OUTPUT

5.5 V

.65 mm

2 mm

Not Qualified

67 dB

1.8 V

BREAK-BEFORE-MAKE

30

235

50 ns

.7 ohm

22 ns

.045 ohm

2 mm

MAX4947ETG+

Analog Devices

DPDT

INDUSTRIAL

24

HVQCCN

SQUARE

YES

UNSPECIFIED

3

3

CMOS

NO LEAD

3 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC24,.16SQ,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N24

SEPARATE OUTPUT

1

5.5 V

.8 mm

4 mm

Not Qualified

70 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

800 ns

5.5 ohm

800 ns

.3 ohm

4 mm

MAX4885AEETI+T

Analog Devices

DPDT

INDUSTRIAL

28

QCCN

SQUARE

YES

PLASTIC/EPOXY

.005 mA

5

2

BICMOS

NO LEAD

2.5/5,5

CHIP CARRIER

LCC28,.16SQ,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQCC-N28

1

.05 A

Not Qualified

e3

30

260

8 ohm

MAX4701EUE+T

Analog Devices

DPDT

INDUSTRIAL

16

TSSOP

RECTANGULAR

YES

PLASTIC/EPOXY

2

2

CMOS

GULL WING

3 V

3/5

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP16,.25

Multiplexer or Switches

.65 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G16

SEPARATE OUTPUT

1

5.5 V

1.1 mm

4.4 mm

Not Qualified

76 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

35 ns

75 ohm

20 ns

2 ohm

5 mm

MAX14508EEVB+

Analog Devices

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

1

2

BICMOS

NO LEAD

3 V

CHIP CARRIER, VERY THIN PROFILE

.4 mm

85 Cel

-40 Cel

NICKEL GOLD PALLADIUM

QUAD

R-XQCC-N10

1

5 V

.55 mm

1.4 mm

65 dB

2.7 V

30

260

60000 ns

5 ohm

5000 ns

.2 ohm

1.8 mm

MAX4984EEVB+T

Analog Devices

DPDT

NICKEL GOLD PALLADIUM

1

30

260

MAX1602EEE+

Analog Devices

DPDT

INDUSTRIAL

16

SSOP

RECTANGULAR

YES

PLASTIC/EPOXY

1

2

CMOS

GULL WING

SMALL OUTLINE, SHRINK PITCH

.635 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

3 V

e3

30

260

6 ohm

4.89 mm

MAX4528CSA+

Analog Devices

DPDT

COMMERCIAL

8

SOP

RECTANGULAR

YES

PLASTIC/EPOXY

1

2

CMOS

GULL WING

-6 V

-5 V

5 V

3/5/+-5

SMALL OUTLINE

SOP8,.25

Multiplexer or Switches

1.27 mm

70 Cel

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

SEPARATE OUTPUT

1

6 V

1.75 mm

3.9 mm

Not Qualified

2.7 V

-2.7 V

e3

BREAK-BEFORE-MAKE

30

260

150 ns

120 ohm

100 ns

4 ohm

4.9 mm

MAX14575BETA+

Analog Devices

DPDT

Matte Tin (Sn) - annealed

1

e3

30

260

MAX4701EGE+T

Analog Devices

DPDT

INDUSTRIAL

16

VQCCN

SQUARE

YES

CERAMIC, METAL-SEALED COFIRED

2

2

CMOS

NO LEAD

3 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-CQCC-N16

1

5.5 V

1 mm

3 mm

Not Qualified

76 dB

1.8 V

e3

35 ns

75 ohm

20 ns

2 ohm

3 mm

MAX14594EEWL+T

Analog Devices

DPDT

INDUSTRIAL

9

VFBGA

SQUARE

YES

PLASTIC/EPOXY

.06 mA

1

2

BICMOS

BALL

2.5 V

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA9,3X3,16

.4 mm

85 Cel

-40 Cel

TIN SILVER COPPER NICKEL

BOTTOM

S-PBGA-B9

COMMON OUTPUT

1

5.5 V

.69 mm

1.26 mm

NC

60 dB

1.6 V

-5.5 V

e2

BREAK-BEFORE-MAKE

30

260

10000000 ns

.38 ohm

2250000 ns

.005 ohm

1.26 mm

5.5 V

5962-01-365-6027

Analog Devices

DPDT

INDUSTRIAL

16

DIP

RECTANGULAR

NO

CERAMIC

.2 mA

1

8

CMOS

THROUGH-HOLE

-15 V

15 V

+-15

IN-LINE

DIP16,.3

Multiplexer or Switches

2.54 mm

85 Cel

-40 Cel

DUAL

R-XDIP-T16

1

.05 A

Not Qualified

BREAK-BEFORE-MAKE

1000 ns

300 ohm

MAX4888BETI+TG3U

Analog Devices

DPDT

NOT SPECIFIED

NOT SPECIFIED

MAX4760ETX+T

Analog Devices

DPDT

INDUSTRIAL

36

HVQCCN

SQUARE

YES

UNSPECIFIED

4

2

CMOS

NO LEAD

3 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC36,.25SQ,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N36

SEPARATE OUTPUT

1

5.5 V

.8 mm

6 mm

Not Qualified

80 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

150 ns

3.5 ohm

60 ns

.2 ohm

6 mm

MAX4996LETG+

Analog Devices

DPDT

INDUSTRIAL

24

HVQCCN

SQUARE

YES

UNSPECIFIED

3

2

BICMOS

NO LEAD

2.8 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC24,.13SQ,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N24

SEPARATE OUTPUT

1

5.5 V

.85 mm

3.5 mm

Not Qualified

60 dB

2.5 V

e3

BREAK-BEFORE-MAKE

30

260

10000 ns

4 ohm

6000 ns

.1 ohm

3.5 mm

MAX4984EEVB+

Analog Devices

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

2

2

BICMOS

NO LEAD

3 V

3/5

CHIP CARRIER, VERY THIN PROFILE

LCC10,.06X.07,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

NICKEL GOLD PALLADIUM

QUAD

R-XQCC-N10

SEPARATE OUTPUT

1

5.5 V

.55 mm

1.4 mm

Not Qualified

48 dB

2.8 V

VIDEO APPLICATION

30

260

100000 ns

10 ohm

5000 ns

.1 ohm

1.8 mm

MAX4528C/D

Analog Devices

DPDT

COMMERCIAL

8

DIE

RECTANGULAR

YES

UNSPECIFIED

1

2

CMOS

NO LEAD

-6 V

UNCASED CHIP

70 Cel

0 Cel

TIN LEAD

UPPER

R-XUUC-N8

1

6 V

Not Qualified

2.7 V

-2.7 V

e0

150 ns

100 ns

MAX14575CETA+T

Analog Devices

DPDT

INDUSTRIAL

8

HVSON

SQUARE

YES

PLASTIC/EPOXY

.275 mA

1

2

BICMOS

NO LEAD

3.3 V

2.5/5

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.08,20

Power Management Circuits

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

DUAL

S-PDSO-N8

1

5.5 V

.8 mm

2 mm

Not Qualified

2.3 V

e3

30

260

.05 ohm

2 mm

MAX14575AETA+

Analog Devices

DPDT

INDUSTRIAL

8

SON

RECTANGULAR

YES

PLASTIC/EPOXY

.275 mA

BICMOS

NO LEAD

2.5/5

SMALL OUTLINE

SOLCC8,.08,20

Power Management Circuits

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-N8

1

Not Qualified

e3

30

260

MAX4996ETG+

Analog Devices

DPDT

INDUSTRIAL

24

HVQCCN

SQUARE

YES

UNSPECIFIED

3

2

BICMOS

NO LEAD

2.8 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC24,.13SQ,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N24

SEPARATE OUTPUT

1

5.5 V

.85 mm

3.5 mm

Not Qualified

60 dB

2.5 V

e3

BREAK-BEFORE-MAKE

30

260

10000 ns

4 ohm

6000 ns

.1 ohm

3.5 mm

MAX4947ETG+T

Analog Devices

DPDT

INDUSTRIAL

24

HVQCCN

SQUARE

YES

UNSPECIFIED

3

3

CMOS

NO LEAD

3 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC24,.16SQ,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N24

SEPARATE OUTPUT

1

5.5 V

.8 mm

4 mm

Not Qualified

70 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

800 ns

5.5 ohm

800 ns

.3 ohm

4 mm

ADG888YCBZ-REEL7

Analog Devices

DPDT

AUTOMOTIVE

16

VFBGA

SQUARE

YES

UNSPECIFIED

2

1

CMOS

BALL

2.7 V

3/5

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA16,4X4,20

Multiplexer or Switches

.5 mm

125 Cel

-40 Cel

BOTTOM

S-XBGA-B16

SEPARATE OUTPUT

5.5 V

.65 mm

2 mm

Not Qualified

67 dB

1.8 V

BREAK-BEFORE-MAKE

30

235

50 ns

.7 ohm

22 ns

.045 ohm

2 mm

MAX4928BETN+

Analog Devices

DPDT

INDUSTRIAL

56

HVQCCN

RECTANGULAR

YES

UNSPECIFIED

6

2

CMOS

NO LEAD

3.3 V

3.3

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC56,.19X.43,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-XQCC-N56

SEPARATE OUTPUT

3

3.6 V

.8 mm

5 mm

Not Qualified

22 dB

3 V

e3

30

260

120 ns

50 ns

.1 ohm

11 mm

MAX4758ETX+T

Analog Devices

DPDT

INDUSTRIAL

36

VQCCN

SQUARE

YES

UNSPECIFIED

4

4

CMOS

NO LEAD

3 V

3/5

CHIP CARRIER, VERY THIN PROFILE

LCC36,.25SQ,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N36

SEPARATE OUTPUT

1

5.5 V

.8 mm

6 mm

Not Qualified

95 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

140 ns

.85 ohm

50 ns

.35 ohm

6 mm

MAX4701ETE+

Analog Devices

DPDT

INDUSTRIAL

16

HVQCCN

SQUARE

YES

UNSPECIFIED

2

2

CMOS

NO LEAD

3 V

3/5

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC16,.12SQ,20

Multiplexer or Switches

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-XQCC-N16

SEPARATE OUTPUT

1

5.5 V

.8 mm

3 mm

Not Qualified

76 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

45 ns

75 ohm

25 ns

2 ohm

3 mm

MAX4994EVB+

Analog Devices

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

1

2

BICMOS

NO LEAD

2.7 V

3/5

CHIP CARRIER, VERY THIN PROFILE

LCC10,.06X.07,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

QUAD

R-XQCC-N10

SEPARATE OUTPUT

1

5.5 V

.55 mm

1.4 mm

Not Qualified

90 dB

1.8 V

BREAK-BEFORE-MAKE

150000 ns

.6 ohm

2000 ns

.003 ohm

1.8 mm

MAX4525CUB+

Analog Devices

DPDT

COMMERCIAL

10

TSSOP

SQUARE

YES

PLASTIC/EPOXY

1

2

CMOS

GULL WING

3 V

3/5

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP10,.19,20

Multiplexer or Switches

.5 mm

70 Cel

0 Cel

Matte Tin (Sn) - annealed

DUAL

S-PDSO-G10

SEPARATE OUTPUT

1

12 V

1.1 mm

3 mm

Not Qualified

2 V

e3

BREAK-BEFORE-MAKE

30

260

300 ns

400 ohm

200 ns

3 mm

MAX4701EGE+

Analog Devices

DPDT

INDUSTRIAL

16

VQCCN

SQUARE

YES

CERAMIC, METAL-SEALED COFIRED

2

2

CMOS

NO LEAD

3 V

CHIP CARRIER, VERY THIN PROFILE

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-CQCC-N16

1

5.5 V

1 mm

3 mm

Not Qualified

76 dB

1.8 V

e3

30

260

35 ns

75 ohm

20 ns

2 ohm

3 mm

MAX4889BETO+T

Analog Devices

DPDT

INDUSTRIAL

42

HVQCCN

RECTANGULAR

YES

UNSPECIFIED

1 mA

4

2

CMOS

NO LEAD

3.3 V

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC42,.14X.35,20

.5 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-XQCC-N42

SEPARATE OUTPUT

1

3.6 V

.8 mm

3.5 mm

15 dB

3 V

-.3 V

e3

BREAK-BEFORE-MAKE

30

260

8.4 ohm

.2 ohm

9 mm

1.8 V

MAX4761EWX+

Analog Devices

DPDT

TIN SILVER COPPER

1

e1

30

260

MAX14585EVB+T

Analog Devices

DPDT

INDUSTRIAL

10

VQCCN

RECTANGULAR

YES

UNSPECIFIED

1

2

BICMOS

NO LEAD

3 V

3/5

CHIP CARRIER, VERY THIN PROFILE

LCC10,.06X.07,16

Multiplexer or Switches

.4 mm

85 Cel

-40 Cel

NICKEL GOLD PALLADIUM

QUAD

R-XQCC-N10

1

5.5 V

.55 mm

1.4 mm

Not Qualified

84 dB

2.7 V

BREAK-BEFORE-MAKE

30

260

120000 ns

6 ohm

40000 ns

.2 ohm

1.8 mm

MAX4701EUE+

Analog Devices

DPDT

INDUSTRIAL

16

TSSOP

RECTANGULAR

YES

PLASTIC/EPOXY

2

2

CMOS

GULL WING

3 V

3/5

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP16,.25

Multiplexer or Switches

.65 mm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G16

SEPARATE OUTPUT

1

5.5 V

1.1 mm

4.4 mm

Not Qualified

76 dB

1.8 V

e3

BREAK-BEFORE-MAKE

30

260

35 ns

75 ohm

20 ns

2 ohm

5 mm

Multiplexers & Switches

Multiplexers and switches are electronic components used in digital and analog circuits to route signals between different inputs and outputs. They allow a single input signal to be sent to multiple output channels or vice versa.

A multiplexer, also known as a "mux," is a digital component that selects one of several input signals and forwards it to a single output. Multiplexers are often used in data communication systems to transmit multiple signals over a single communication channel. They can also be used in digital circuits to route control signals and address lines.

A switch is an electronic component that connects or disconnects two or more circuits. Switches can be mechanical or electronic and are used to control the flow of current in a circuit. In digital circuits, switches are used to connect or disconnect components and can be used to create logic gates and other digital components.

Multiplexers and switches are important components in various electronic systems, including communication systems, data processing systems, and control systems. They can be used to route signals between different parts of a circuit and to switch between different modes of operation. Multiplexers and switches can also be used to improve the efficiency of a system by reducing the number of components needed to perform a particular function.