10 RF & Microwave Amplifiers 123

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN		1	34 dBm	6		COMPONENT	28		50 ohm		85 Cel	11 dB	-40 Cel				2000 MHz	20000 MHz
TGA2238-CP	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN		1	30 dBm	3	650 mA	MODULE	-2.6,28		50 ohm		85 Cel	28 dB	-40 Cel				8000 MHz	11000 MHz
TGM2635-CP	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	10				1	33 dBm	3		MODULE			50 ohm		85 Cel	26 dB	-40 Cel				7900 MHz	11000 MHz
TGA2578-CP	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN		1	25 dBm	10	400 mA	MODULE	-2.8,28		50 ohm			26 dB					2000 MHz	6000 MHz
MGA-545P8-TR1	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Matte Tin (Sn)		e3	50 MHz	7000 MHz
TGA2578	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN		1	25 dBm	10	400 mA	COMPONENT	-2.8,28	DIE OR CHIP	50 ohm		275 Cel	27 dB					2000 MHz	6000 MHz
MGA-545P8-BLK	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Tin (Sn)		e3	50 MHz	7000 MHz
MGA-545P8-TR2	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Matte Tin (Sn)		e3	50 MHz	7000 MHz
AWT6283RM49P8	Skyworks Solutions	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	HYBRID		1		10	170 mA	COMPONENT	3.3	SOLCC10,.16,34	50 ohm		85 Cel	31 dB	-40 Cel				3300 MHz	3800 MHz
ADPA7009CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT		1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
ADPA7007CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT		1	18 dBm		1400 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	18 dB	-55 Cel				18000 MHz	44000 MHz
ADPA7009C-KIT	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT		1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
MAX3524EVB+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	0 dBm		95 mA	COMPONENT	5	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	7.6 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	44 MHz	880 MHz
MAX3524EVB	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	0 dBm		95 mA	COMPONENT	5	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	7.6 dB	-40 Cel	TIN LEAD		e0	44 MHz	880 MHz
ADL9006CHIPS	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10		PHEMT		1	20 dBm	1.12		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				2000 MHz	28000 MHz
HMC1086	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN		1	33 dBm	6		COMPONENT	28	DIE OR CHIP	50 ohm		85 Cel	23 dB	-40 Cel				2000 MHz	6000 MHz
HMC392A	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10		GAAS		1	20 dBm		75 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	14.5 dB	-55 Cel				3500 MHz	7000 MHz
HMC7327F10A	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAN		1	34 dBm			COMPONENT	3.2	FL10(UNSPEC)	50 ohm		85 Cel	26 dB	-40 Cel				2700 MHz	3200 MHz
STB7003	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			2		2		COMPONENT	2.8	TSSOP10,.19,20		RF/Microwave Amplifiers		16 dB			IT CAN ALSO OPERATE AT 1800 TO 2000 MHZ		900 MHz	1000 MHz
OM956/1	NXP Semiconductors		SURFACE MOUNT	10	CERAMIC	HYBRID							12	GWDIP10,.75		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM320	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM336	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM321	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM339	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM323	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID					105 mA		24	SIP10,.07TB		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
OM335	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGU8062	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm								1500 MHz	2700 MHz
935305477118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU7052,118	NXP Semiconductors		SURFACE MOUNT	10	PLASTIC/EPOXY			1			95 mA		3.3	SOLCC10,.12,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU7053,118	NXP Semiconductors		SURFACE MOUNT	10	PLASTIC/EPOXY			1			110 mA		3.3	SOLCC10,.12,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
CGY99	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	10		GAAS				2		COMPONENT	2.7/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		30 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
PMB4819	Infineon Technologies		SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR					480 mA		3/4.5	TSSOP10,.19,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PMB2362V1.1	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR				1.5		COMPONENT	3/3.3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
CGB240	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	10 dBm	6	150 mA	COMPONENT	2/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		23 dB					2400 MHz	2500 MHz
MAX2645EUB	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	16 dBm		11.6 mA	COMPONENT	3.3/5	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.9 dB	-40 Cel	TIN LEAD		e0	3400 MHz	3800 MHz
MAX2652EUB	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR		2			11 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2651EUB	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR		2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2652EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR		2			11 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2651EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR		2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
UPG2301TQ-E1-A	Renesas Electronics		SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1			130 mA		3.3	SOLCC10,.1,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
WPS-445133-02	Littelfuse		SURFACE MOUNT	10	PLASTIC/EPOXY			1					4.5	SOLCC10,.43		RF/Microwave Amplifiers
ACPM-7372-TR1	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	10 dBm	2.5	635 mA	COMPONENT	3.4	SOLCC10,.16,32	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-20 Cel				880 MHz	915 MHz
ACPM-7381-BLKR	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	10 dBm	2	560 mA	COMPONENT	3.4	SOLCC10,.16,32	50 ohm	RF/Microwave Amplifiers	90 Cel	13 dB	-20 Cel	Gold (Au)		e4	1920 MHz	1980 MHz
ACPM-5204-TR1	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	5 dBm	2.5	510 mA	COMPONENT	3.4	SOLCC10,.11,24	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-20 Cel				1710 MHz	1755 MHz
ACPM-5005-BLK	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	10 dBm	2.5	545 mA	MODULE	3.4	SOLCC10,.11,24	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-20 Cel				815 MHz	849 MHz
ACPM-7311-BLKR	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	10 dBm	10	525 mA	COMPONENT	3.4	SOLCC10,.16,32	50 ohm	RF/Microwave Amplifiers	90 Cel	11.5 dB	-20 Cel	Gold (Au)		e4	824 MHz	849 MHz
ACPM-7833-BLK	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY			1	10 dBm	2.5	550 mA	COMPONENT	3.4	SOLCC10,.16,32	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-30 Cel				1850 MHz	1910 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.