Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
207 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
Matte Tin (Sn) |
e3 |
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|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
14 dBm |
77 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
23.6 dB |
MATTE TIN |
e3 |
1800 MHz |
2200 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
LDMOS |
1 |
20 dBm |
10 |
COMPONENT |
48 |
50 ohm |
150 Cel |
35 dB |
-40 Cel |
Tin (Sn) |
e3 |
575 MHz |
960 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
LDMOS |
1 |
20 dBm |
10 |
COMPONENT |
48 |
50 ohm |
150 Cel |
35 dB |
-40 Cel |
Tin (Sn) |
e3 |
575 MHz |
960 MHz |
||||||||
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
2.5 |
COMPONENT |
2.7/3.6 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
25.5 dB |
0 Cel |
TIN LEAD |
e0 |
2400 MHz |
2500 MHz |
||||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
2.5 |
COMPONENT |
2.7/3.6 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
25.5 dB |
0 Cel |
Matte Tin (Sn) |
e3 |
2400 MHz |
2500 MHz |
|||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
850 MHz |
940 MHz |
||||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
136 MHz |
174 MHz |
||||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
850 MHz |
940 MHz |
||||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
10 |
350 mA |
COMPONENT |
3 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
2400 MHz |
2500 MHz |
|||||||
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
10 |
350 mA |
COMPONENT |
3 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
Tin/Lead (Sn63Pb37) |
e0 |
2400 MHz |
2500 MHz |
||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
e3 |
850 MHz |
940 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
10 |
350 mA |
COMPONENT |
3 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2400 MHz |
2500 MHz |
|||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
10 |
350 mA |
COMPONENT |
3 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
2400 MHz |
2500 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
335 mA |
COMPONENT |
2.7/3.6 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
25.5 dB |
0 Cel |
Matte Tin (Sn) |
e3 |
2400 MHz |
2500 MHz |
||||||
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
10 |
350 mA |
COMPONENT |
3 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
25 dB |
0 Cel |
Tin/Lead (Sn63Pb37) |
e0 |
2400 MHz |
2500 MHz |
||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
TIN LEAD |
e0 |
850 MHz |
940 MHz |
||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
e3 |
136 MHz |
174 MHz |
|||||||
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
335 mA |
COMPONENT |
2.7/3.6 |
BGA12,3X4,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
25.5 dB |
0 Cel |
TIN LEAD |
e0 |
2400 MHz |
2500 MHz |
|||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
136 MHz |
174 MHz |
||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
136 MHz |
174 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
e3 |
850 MHz |
940 MHz |
|||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1 |
76 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
17 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
3000 MHz |
4200 MHz |
||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
10 dBm |
130 mA |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
2400 MHz |
2500 MHz |
||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
130 mA |
3.3 |
LCC12,.08SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
22 dBm |
1 |
78 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
17 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
1400 MHz |
3200 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1.1 |
86 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
18 dB |
-40 Cel |
LOW NOISE |
3000 MHz |
4200 MHz |
||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
22 dBm |
1 |
78 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
17 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
1400 MHz |
3200 MHz |
||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
265 mA |
COMPONENT |
3 |
LCC12,.08SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
2400 MHz |
2500 MHz |
||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
20 mA |
3 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1.1 |
86 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
18 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
3000 MHz |
4200 MHz |
||||||||
|
Renesas Electronics |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
140 mA |
3.3 |
LCC12,.1SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1 |
76 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
17 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
3000 MHz |
4200 MHz |
||||||||
|
Broadcom |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
11.5 mA |
1.8/2.7 |
MODULE,12LEAD,.13 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
15 mA |
COMPONENT |
1/2.85 |
MODULE,12LEAD,.13 |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
CMOS COMPATIBLE |
0 MHz |
1575 MHz |
||||||||||
|
Broadcom |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
11.5 mA |
1.8/2.7 |
MODULE,12LEAD,.13 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
15 mA |
COMPONENT |
1/2.85 |
MODULE,12LEAD,.13 |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
HIGH RELIABILITY |
0 MHz |
1575 MHz |
||||||||||
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
2 |
5 dBm |
31 mA |
COMPONENT |
3.3 |
LCC12,.12SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
CMOS COMPATIBLE |
2400 MHz |
2500 MHz |
|||||||||
|
Broadcom |
NARROW BAND LOW POWER |
12 |
PLASTIC/EPOXY |
1 |
15 dBm |
15 mA |
COMPONENT |
1.8/2.7 |
MODULE,12LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
LOW NOISE |
|||||||||||||
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
2 |
5 dBm |
31 mA |
COMPONENT |
3.3 |
LCC12,.12SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
CMOS COMPATIBLE |
2400 MHz |
2500 MHz |
|||||||||
|
Broadcom |
NARROW BAND LOW POWER |
12 |
PLASTIC/EPOXY |
1 |
15 dBm |
15 mA |
COMPONENT |
1.8/2.7 |
MODULE,12LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
LOW NOISE |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.