12 RF & Microwave Amplifiers 89

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC441LC3BTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		1	15 dBm		115 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	GOLD		e4	6000 MHz	18000 MHz
PMA3-83LNW+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	PHEMT		1	16 dBm	1.13	94 mA	COMPONENT	5/6		50 ohm		105 Cel	16.9 dB	-40 Cel				400 MHz	8000 MHz
HMC441LC3B	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		1	15 dBm		115 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	GOLD		e4	6000 MHz	18000 MHz
QPA1010D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	12		GAN		1	30 dBm	3	600 mA	COMPONENT	-1.9,24	DIE OR CHIP	50 ohm			23.1 dB					7900 MHz	11000 MHz
PMA3-14LN+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	PHEMT		1	12 dBm	1.22	90 mA	COMPONENT	6		50 ohm		85 Cel	20.3 dB	-40 Cel				50 MHz	10000 MHz
HMC441LH5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1			115 mA		5	LCC12,.2SQ		RF/Microwave Amplifiers	85 Cel		-40 Cel
TSS-53LNB+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	E-PHEMT		1	8 dBm		105 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	5000 MHz
SST12LP08-QXBE	Microchip Technology	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	5 dBm			COMPONENT	3.3	LCC12,.08SQ,16	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel	MATTE TIN	HIGH RELIABILITY	e3	2412 MHz	2484 MHz
HMC3653LP3BETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			55 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3	7000 MHz	15000 MHz
MMZ09312BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	14 dBm		83 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		29 dB		MATTE TIN		e3	400 MHz	1000 MHz
HMC441LH5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1	15 dBm			COMPONENT	5	LCC12,.2SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	GOLD OVER NICKEL	HIGH RELIABILITY	e4	7000 MHz	15500 MHz
MMA25312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			138 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
HMC3587LP3BETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		60 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	15 dB	-40 Cel	MATTE TIN		e3	4000 MHz	10000 MHz
XTRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1				COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	16 dB	-40 Cel				10 MHz	11000 MHz
MMZ25332BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			412 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
CA3006/3	Rca Solid State			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
MAX2371ETC+T	Analog Devices		SURFACE MOUNT	12	PLASTIC/EPOXY			1			5.5 mA		2.7	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
ALM-1412-BLKG	Broadcom	WIDE BAND LOW POWER		12	PLASTIC/EPOXY	GAAS		1	15 dBm		15 mA	COMPONENT	1/2.85	MODULE,12LEAD,.13	50 ohm	RF/Microwave Amplifiers		11 dB			CMOS COMPATIBLE		0 MHz	1575 MHz
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz
5962R2122001VXC	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12		BICMOS	MIL-PRF-38535; MIL-STD-883	1				COMPONENT	3.3		50 ohm		125 Cel	12.5 dB	-40 Cel		RH - 100K Rad(Si)		10 MHz	6500 MHz
HMC442LC3B	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1	16 dBm			COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	GOLD OVER NICKEL		e4	17500 MHz	25500 MHz
HMC441LC3BRTR	Analog Devices		SURFACE MOUNT	12	CERAMIC	GAAS		1			115 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC463LH250TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1			80 mA		5	LCC12,.25SQ		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1048LC3B	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1	20 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	11 dB	-55 Cel	GOLD OVER NICKEL		e4	2000 MHz	18000 MHz
HMC594LC3BTR	Analog Devices		SURFACE MOUNT	12	CERAMIC	GAAS		1			130 mA		5/6	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	GOLD		e4
HMC3587LP3BE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		60 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	15 dB	-40 Cel	MATTE TIN		e3	4000 MHz	10000 MHz
HMC463LH250	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1	23 dBm		80 mA	COMPONENT	5	LCC12,.25SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	GOLD	HIGH RELIABILITY	e4	2000 MHz	20000 MHz
HMC442LC3BRTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12		GAAS		1	16 dBm			COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	8 dB	-40 Cel				17500 MHz	25500 MHz
HMC441LH5RTR	Analog Devices		SURFACE MOUNT	12	CERAMIC	GAAS		1			115 mA		5	LCC12,.2SQ		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC341LC3B	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12		GAAS		1	5 dBm		35 mA	COMPONENT	3	LCC12,.12SQ,20	50 ohm		85 Cel	13 dB	-40 Cel	GOLD OVER NICKEL	LOW NOISE	e4	2100 MHz	2900 MHz
HMC1014	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12		GAAS		1	18 dBm			COMPONENT	6	DIE OR CHIP	50 ohm		85 Cel	21 dB	-55 Cel	Gold (Au)		e4	33500 MHz	46500 MHz
HMC442LC3BTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1					5	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC341LC3BTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	CERAMIC	GAAS		1					3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC341LC3BRTR	Analog Devices		SURFACE MOUNT	12	CERAMIC	GAAS		1					3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2373ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	850 MHz	940 MHz
MAX2371ETC	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	TIN LEAD		e0	136 MHz	174 MHz
MAX2371ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	136 MHz	174 MHz
A2I09VD050NR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID		2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
MMG2401NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1				COMPONENT	3.3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MMG20271HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			227 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MML09212HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			178 mA		5	SOLCC12,.12,20		RF/Microwave Amplifiers				MATTE TIN		e3
MMA20312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		Matte Tin (Sn)		e3	1800 MHz	2200 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.