METAL RF & Microwave Amplifiers 61

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
A33	TE Connectivity			4	METAL			1			16 mA		15	CAN4,.3		RF/Microwave Amplifiers	50 Cel		0 Cel
MWA330	Motorola	WIDE BAND LOW POWER		3	METAL	HYBRID			20 dBm	3	100 mA	MODULE		CAN3/4,.2	50 ohm	RF/Microwave Amplifiers	80 Cel		-25 Cel	Tin/Lead (Sn/Pb)		e0	.1 MHz	1000 MHz
A64	TE Connectivity			4	METAL			1			38 mA		15	CAN4,.3		RF/Microwave Amplifiers	50 Cel		0 Cel
MGA-86576	Agilent Technologies		SURFACE MOUNT	4	METAL	GAAS					22 mA		5	SL,4LEAD,.07SQ		RF/Microwave Amplifiers
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
CA3006/3	Rca Solid State			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
MHL21336	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	GAAS			5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
MHL9128	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
MHL9838N	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID		1	6 dBm	1.5	800 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	925 MHz
MWA320	Motorola	WIDE BAND LOW POWER		3	METAL	HYBRID			-20 dBm	3	55 mA	MODULE		CAN3/4,.2	50 ohm	RF/Microwave Amplifiers	80 Cel	7 dB	-25 Cel	Tin/Lead (Sn/Pb)		e0	.1 MHz	1000 MHz
PPA4213	Analog Devices		SURFACE MOUNT	4	METAL	GAAS							8	QFL4,.4SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
PPA18222	Analog Devices		SURFACE MOUNT	4	METAL	GAAS							9	QFL4,.25SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
HMC6980	Analog Devices	WIDE BAND MEDIUM POWER		6	METAL	GAAS		1	27 dBm			COAXIAL	11	MODULE(UNSPEC)	50 ohm		85 Cel	11 dB	-55 Cel		SMA-F		10 MHz	20000 MHz
BGF944	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
BGY785AD	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID		1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY785AD/8M	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID		1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGF944,127	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
MHW7205CL	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	750 MHz
MHPA19010N	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1930 MHz	1990 MHz
MHW1810-1	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID			21 dBm	2		COMPONENT	5,26	MOT CASE 301AW-02	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel				1805 MHz	1880 MHz
MHL8118	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	2.6	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		50 MHz	1000 MHz
MHPA19010	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1930 MHz	1990 MHz
MHW9182B	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					240 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	1000 MHz
MHL9125	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	760 mA	COMPONENT	15	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
MHL8018	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			14 dBm	2.6	240 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	17.5 dB	-20 Cel		LOW NOISE		40 MHz	1000 MHz
MHPA21010	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	23.7 dB	-20 Cel				2110 MHz	2170 MHz
MHW1810-2	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID			16 dBm	2		COMPONENT	5,26	MOT CASE 301AW-02	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-10 Cel				1805 MHz	1880 MHz
MHW1910-1	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID			21 dBm	2		COMPONENT	5,26	MOT CASE 301AW-02	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
MHL21336N	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
MHL9838	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID			6 dBm	1.5	800 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				800 MHz	925 MHz
MHL8115	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	2.6	760 mA	COMPONENT	15	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		50 MHz	1000 MHz
MHW7185CL	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	750 MHz
MHW1815	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID			17 dBm	3		COMPONENT	5,26	MOT CASE 301AK-01	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-30 Cel				1805 MHz	1880 MHz
MHW9242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID					350 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	1000 MHz
MHW9182C	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					240 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	1000 MHz
MHL9236	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID			10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	960 MHz
MHW7185CR	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					435 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	750 MHz
MHPA21010N	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	23.7 dB	-20 Cel				2110 MHz	2170 MHz
MHL21336NN	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
CGY31	Infineon Technologies			4	METAL	GAAS					200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
CGY21	Infineon Technologies			4	METAL	BIPOLAR					200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
TMD1414-02B	Toshiba	NARROW BAND LOW POWER			METAL	GAAS		1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
TMD1414-1L	Toshiba	NARROW BAND MEDIUM POWER			METAL			1	20 dBm		1200 mA	COMPONENT	7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	100 Cel	26 dB	-60 Cel				14000 MHz	14500 MHz
TMD1414-02C	Toshiba	NARROW BAND LOW POWER			METAL	GAAS		1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
TMD1414-02	Toshiba	NARROW BAND LOW POWER			METAL	GAAS					300 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-1	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS					1000 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-2	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS					1800 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
UPC1659A	Renesas Electronics			4	METAL	BIPOLAR					27 mA		10	CAN4,.1		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.