PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SPF5043Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	4000 MHz
SPF5122ZSR	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	27 dBm		99 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.2 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	4000 MHz
MAX2659ELT+T	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1			5.6 mA		1.8/3	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	GOLD NICKEL		e4
BGU7005,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm			COMPONENT	1.8	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
TQP3M9028	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	23 dBm		100 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	4000 MHz
TQP3M9009	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		150 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	50 MHz	4000 MHz
SBB5089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB5089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
SBB-5089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
HMC903LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm		85 Cel	18.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	6000 MHz	17000 MHz
SPF-5122Z	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	27 dBm		99 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.2 dB	-40 Cel	MATTE TIN		e3	50 MHz	4000 MHz
TQP3M9008	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	E-PHEMT	1	23 dBm	1.33	100 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	105 Cel	19 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	4000 MHz
SPF5043ZSQ	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel				50 MHz	4000 MHz
SPF5043ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	4000 MHz
TQP7M9103	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	30 dBm	10	260 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	16.6 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	4000 MHz
HMC903LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	6000 MHz	17000 MHz
MGA-62563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Tin (Sn)		e3	100 MHz	3000 MHz
TRF37C73IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
HMC451LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz
HMC441LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6500 MHz	13500 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
BGU8009,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
RF3827TR7	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	20	130 mA	COMPONENT	8	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20.5 dB	-40 Cel		LOW NOISE		5 MHz	1500 MHz
ADL9005ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
MGA-62563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
HMC441LC3BTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	GOLD		e4	6000 MHz	18000 MHz
HMC441LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6500 MHz	13500 MHz
BGU7007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			15.9 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
PMA3-83LNW+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	PHEMT	1	16 dBm	1.13	94 mA	COMPONENT	5/6		50 ohm		105 Cel	16.9 dB	-40 Cel				400 MHz	8000 MHz
MGA-62563-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
HMC326MS8GETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3000 MHz	4500 MHz
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC907APM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC1082LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
MGA-62563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
MGA-62563-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
HMC441LC3B	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	GOLD		e4	6000 MHz	18000 MHz
HMC1082LP4E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5500 MHz	18000 MHz
MGA-82563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	8.8 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	100 MHz	6000 MHz
BGU8007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			14.7 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
MAAL-010704-TR3000	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	24 dBm		75 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	95 Cel	10 dB	-40 Cel	MATTE TIN		e3	100 MHz	3500 MHz
MGA-61563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2640EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	300 MHz	1500 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC441LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	6500 MHz	13500 MHz
HMC960LP4ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
HMC451LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.