PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC797LP5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1			440 mA		10	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-55 Cel
MGA-72543-BLKG	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1	20 dBm	2.1		COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		9.2 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
MGA-72543-TR1	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS			20 dBm	2.1		COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.2 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	6000 MHz
MGA-72543-TR2G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1	20 dBm	2.1		COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		9.2 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
RF2374	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	5 dBm			COMPONENT	3	LCC8,.08SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	13.5 dB	-40 Cel	MATTE TIN		e3	800 MHz	4000 MHz
ADA-4643-TR1G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	18 dBm	1.6		COMPONENT	3.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		15.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	2500 MHz
AH202-F	Triquint Semiconductor	WIDE BAND MEDIUM POWER	SURFACE MOUNT	28	PLASTIC/EPOXY			1	16 dBm		390 mA	COMPONENT	11	LCC28,.24SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	30 MHz	2200 MHz
HMC287MS8ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1			15 mA		3	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC374SC70E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	300 MHz	3000 MHz
HMC716LP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	MATTE TIN OVER NICKEL		e3	3100 MHz	3900 MHz
HMC797LP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	23 dBm	7	440 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-55 Cel	Matte Tin (Sn)		e3	0 MHz	22000 MHz
MGA-81563	Broadcom		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					51 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
MGA-81563-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
RA35H1516M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				154 MHz	162 MHz
ABA-54563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.2	90 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3400 MHz
HMC907LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	20 dBm		400 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	Matte Tin (Sn)		e3	200 MHz	22000 MHz
HMC907LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1			400 mA		10	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-55 Cel
MAR-3SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			13 dBm	1.7	35 mA	COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-20 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	0 MHz	2000 MHz
MGA-30789-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	24 dBm		117 mA	COMPONENT	5	TO-243		RF/Microwave Amplifiers		8 dB		Tin (Sn)		e3	2000 MHz	6000 MHz
1214-800P	Microsemi				PLASTIC/EPOXY			1					50	MODULE(UNSPEC)		RF/Microwave Amplifiers
ABA-31563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm	1.5	16 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
BGA2869,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			26 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
HMC659LC5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	20 dBm			COMPONENT	3/8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	0 MHz	15000 MHz
M57706L	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	4		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	145 MHz
MGA-31189-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	25 dBm		128 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)	LOW NOISE	e3	50 MHz	2000 MHz
PGA-1021+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	28 dBm		90 mA	COMPONENT	3.3	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.6 dB	-40 Cel	TIN SILVER OVER NICKEL	LOW NOISE	e2	50 MHz	6000 MHz
QPA2612	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN		1	21 dBm	4		COMPONENT		LCC24,.2SQ,25	50 ohm			34.2 dB					8000 MHz	12000 MHz
QPA2612TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN		1	21 dBm	4		COMPONENT		LCC24,.2SQ,25	50 ohm			34.2 dB					8000 MHz	12000 MHz
SGA3363ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				0 MHz	5500 MHz
ERA-50SM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	13 dBm	1.2	60 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-45 Cel	Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier		e2	0 MHz	1500 MHz
ERA-50SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	13 dBm	1.2	60 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-45 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	1500 MHz
HMC327MS8G	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	16 dBm			COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	3000 MHz	4000 MHz
HMC475ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	4500 MHz
HMC475ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	4500 MHz
HMC478MP86	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	4000 MHz
HMC478MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC478MP86ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1					5	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC478MP86TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1					5	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC478SC70E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		82 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	23 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC478SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			82 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC478ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	5 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC478ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC491LP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	30 dBm			COMPONENT	3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	MATTE TIN		e3	3400 MHz	3800 MHz
HMC694LP4ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
MAX2659ELT/V+T	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1			5.6 mA		1.8/3.3	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
QPA9121TR7	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	2	130 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		105 Cel	24 dB	-40 Cel				2300 MHz	5000 MHz
ADL5544ARKZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		69 mA	COMPONENT	5	TO-243	50 ohm		105 Cel	18.5 dB	-40 Cel	MATTE TIN		e3	30 MHz	6000 MHz
HMC3587LP3BETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		60 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	15 dB	-40 Cel	MATTE TIN		e3	4000 MHz	10000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.