PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC383LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1			135 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC409LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3300 MHz	3800 MHz
M67799HA	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			14.77 dBm	20		MODULE	3.5,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				450 MHz	470 MHz
MGA-23003-TR1G	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel				3300 MHz	3800 MHz
MGA-30889-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Matte Tin (Sn)		e3	40 MHz	2600 MHz
MGA-81563-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE, HIGH RELIABILITY	e0	100 MHz	6000 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMZ25332BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			412 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
MSA-1105-STR	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	1300 MHz
NPA1006A	M/a-com Technology Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HEMT		1		15		COMPONENT	28	SOLCC8,.23	50 ohm		85 Cel	12.5 dB	-40 Cel				20 MHz	1000 MHz
NPA1006A-TR0500	M/a-com Technology Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HEMT		1		15		COMPONENT	28	SOLCC8,.23	50 ohm		85 Cel	12.5 dB	-40 Cel				20 MHz	1000 MHz
QPL6207QTR7	Qorvo	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	AEC-Q100	1	30 dBm	2.2	68 mA	COMPONENT	4.5	SOLCC8,.08,20	50 ohm		105 Cel	18.1 dB	-40 Cel				2320 MHz	2345 MHz
RA07M4047M	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	18.45 dBm	4		MODULE	3.5,7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				400 MHz	470 MHz
RA07M4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	18.45 dBm	4		MODULE	3.5,7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RA20H8994M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				896 MHz	941 MHz
SGA-2463Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	17.1 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA2463Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SKY65404-31	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm			COMPONENT	3	SOLCC6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel				4900 MHz	5900 MHz
ABA-52563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.4		COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	3500 MHz
ADA-4643-TR2G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	18 dBm	1.6		COMPONENT	3.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		15.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	2500 MHz
HMC465LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1					8	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC716LP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	MATTE TIN		e3	3100 MHz	3900 MHz
HMC788LP2E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	5	SOLCC6,.08,25	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	10000 MHz
HMC788LP2ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1					5	SOLCC6,.08,25		RF/Microwave Amplifiers	85 Cel		-40 Cel
MD7IC2755NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		TIN		e3	2500 MHz	2700 MHz
MD8IC925NR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MGA-83563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	4.5	200 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		17 dB		Matte Tin (Sn)		e3	500 MHz	6000 MHz
MMG3001NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.17	300 mA	COMPONENT	5.6	TO-243	50 ohm			18 dB					40 MHz	3600 MHz
MW7IC2725GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MW7IC2725NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
PGA-105+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	23 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel				40 MHz	2600 MHz
QPA9501TR13	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY			1	5 dBm		650 mA	COMPONENT	5	LCC20,.16SQ,20	50 ohm		105 Cel	29.5 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	4900 MHz	5900 MHz
SBB3089ZSQ	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
SGA-6286Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel				0 MHz	5500 MHz
SGA2486Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	17.8 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA6286Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
SPF-5189Z	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	27 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11.3 dB	-40 Cel				50 MHz	4000 MHz
TQL9047	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1					5	SOLCC8,.08,20		RF/Microwave Amplifiers
UPC8179TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.4 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU7005/Z/N2115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	0 dBm	1.22	14.4 mA	COMPONENT	1.8	SOLCC6,.04,20	50 ohm		85 Cel	14 dB	-40 Cel				1559 MHz	1610 MHz
MAX2371ETC+T	Analog Devices		SURFACE MOUNT	12	PLASTIC/EPOXY			1			5.5 mA		2.7	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
BGA2817,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			22.2 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGA2815,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			21.1 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
AMMP-6222-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	10 dBm		160 mA	COMPONENT	4	LCC8(UNSPEC)	50 ohm	RF/Microwave Amplifiers		23 dB		Nickel/Gold (Ni/Au)	LOW NOISE	e4	7000 MHz	21000 MHz
ALM-1412-BLKG	Broadcom	WIDE BAND LOW POWER		12	PLASTIC/EPOXY	GAAS		1	15 dBm		15 mA	COMPONENT	1/2.85	MODULE,12LEAD,.13	50 ohm	RF/Microwave Amplifiers		11 dB			CMOS COMPATIBLE		0 MHz	1575 MHz
MGA-545P8-BLK	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Tin (Sn)		e3	50 MHz	7000 MHz
SKY65017-70LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm	2		COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel					6000 MHz
ADL5606ACPZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			1	18 dBm		390 mA	COMPONENT	5	LCC16,.16SQ,25	50 ohm		85 Cel	24.7 dB	-40 Cel	MATTE TIN		e3	1800 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.