PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC311LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	6000 MHz
HMC463LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	2000 MHz	20000 MHz
INA-10386-TR1	Agilent Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.5	55 mA	COMPONENT	6	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	23 dB	-25 Cel				0 MHz	1800 MHz
MSA-0686-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	20 mA	COMPONENT	3.5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		16.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	800 MHz
SBB2089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		98 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	850 MHz
SBB-2089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		98 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	850 MHz
SST12CP11-QVCE	Microchip Technology		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1					5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADL5523ACPZ-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				COMPONENT	5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.5 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	400 MHz	4000 MHz
HMC372LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	MATTE TIN		e3	700 MHz	1000 MHz
HMC372LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1					5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC465LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	20000 MHz
HMC636ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel		LOW NOISE		200 MHz	4000 MHz
MAAM-011112-TR0500	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	0 dBm		400 mA	COMPONENT	4	LCC16,.12SQ,20	50 ohm		85 Cel	21 dB	-40 Cel				20000 MHz	37000 MHz
MAX2630EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2630EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MGA-631P8-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	4	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		16 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-82563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE, HIGH RELIABILITY	e0	100 MHz	6000 MHz
MMA25312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			138 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
NPA1003QA	M/a-com Technology Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	HEMT	1		10		COMPONENT	28	LCC16,.16SQ,20	50 ohm		85 Cel	14 dB	-40 Cel				20 MHz	1500 MHz
RA07H4047M-501	Mitsubishi Electric	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	4	PLASTIC/EPOXY	HYBRID	1	14.77 dBm	4		MODULE	12.5	MODULE,4LEAD,.74	50 ohm		90 Cel	25.22 dB	-30 Cel				400 MHz	470 MHz
RDA1005L	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1				COMPONENT	5	LCC32,.2SQ,20		RF/Microwave Amplifiers		17.5 dB					50 MHz	4000 MHz
RDA1005LSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm		85 Cel	33 dB	-40 Cel					1000 MHz
AMMP-5618-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	20 dBm		140 mA	COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		13 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
HMC1040LP3CE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	5 dBm		85 mA	COMPONENT	2.5	LCC16,.12SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				24000 MHz	43500 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC406MS8GETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
HMC505LP4	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD	LOW NOISE	e0	6800 MHz	7400 MHz
MAX2640AUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		7.8 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	125 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	300 MHz	1500 MHz
MGA-86563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.7		COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.7 dB	-40 Cel	Matte Tin (Sn)		e3	500 MHz	6000 MHz
QPA2611TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN	1	21 dBm	3		COMPONENT		LCC24,.2SQ,25	50 ohm			35.5 dB					8000 MHz	12000 MHz
SBB3089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
SBB3089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
TQL9063	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	22 dBm	2.01	100 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		105 Cel	17.5 dB	-40 Cel				500 MHz	4000 MHz
ADA-4743-TR1	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	20 dBm	1.5		COMPONENT	3.8	SOT-343R	50 ohm	RF/Microwave Amplifiers		15 dB		Tin/Lead (Sn/Pb)		e0	0 MHz	2500 MHz
ERA-3SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY		1	13 dBm	1.5	35 mA	COMPONENT	3	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-45 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	3000 MHz
ERA-3SM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY		1	13 dBm	1.4	35 mA	COMPONENT	3	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	15.4 dB	-45 Cel	TIN SILVER OVER NICKEL	USABLE TO 10 GHZ	e2	0 MHz	3000 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC409LP4E	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3300 MHz	3800 MHz
HMC441LP3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	6500 MHz	13500 MHz
HMC453ST89ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC465LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	20000 MHz
HMC505LP4TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC636ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD		e0
MGA-545P8-TR1	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Matte Tin (Sn)		e3	50 MHz	7000 MHz
MGA-635P8-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		71 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Tin (Sn)		e3	2300 MHz	4000 MHz
SGA-3563	Rf Micro Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm	1.2	39 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel		LOW NOISE		0 MHz	5000 MHz
TQP3M9019	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	23 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	50 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.