PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
RF3827	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	20	130 mA	COMPONENT	8	LCC16,.12SQ,20	75 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5 MHz	1500 MHz
MW7IC2220NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
HMC311SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	8000 MHz
MGA-81563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
935373852528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	Tin (Sn)		e3	3200 MHz	4000 MHz
MMG20241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB		MATTE TIN		e3	450 MHz	3800 MHz
RF5110G	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	10		COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 800 TO 950 MHZ	e3	880 MHz	915 MHz
HMC1040LP3CETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	5 dBm		85 mA	COMPONENT	2.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				24000 MHz	43500 MHz
ADL5521ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		65 mA	COMPONENT	3/5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	400 MHz	4000 MHz
HMC549MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	0 dBm			COMPONENT	5	TSOP8,.3,38	75 ohm	RF/Microwave Amplifiers	85 Cel	2 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	960 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm			11 dB		Matte Tin (Sn)		e3		28000 MHz
MMG15241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	23 dBm		105 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		MATTE TIN	LOW NOISE	e3	500 MHz	2800 MHz
HMC326MS8GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3000 MHz	4500 MHz
MAX2232EEE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.5		COMPONENT	3/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MGA-61563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
HMC462LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
HMC505LP4E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	6800 MHz	7400 MHz
MW7IC008NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	2	38 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		21.5 dB		MATTE TIN		e3	100 MHz	1000 MHz
TQP3M9037	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	22 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	105 Cel	18.5 dB	-40 Cel				700 MHz	6000 MHz
SBB-4089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
QPL9547TR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	22 dBm	1.54	100 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			17.5 dB		Nickel/Palladium/Gold (Ni/Pd/Au)		e4	100 MHz	6000 MHz
HMC960LP4E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
AG303-86G	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20.4 dB	-40 Cel	MATTE TIN	HIGH RELIABILITY	e3	0 MHz	6000 MHz
HMC451LC3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		114 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD OVER NICKEL	SMA	e4	5000 MHz	20000 MHz
HMC549MS8GTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
CC2590RGVR	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
BGA3018,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			135 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
MGA-81563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
MHT2012NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	TIN		e3	2400 MHz	2500 MHz
TRF37D73IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	20 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
QPA1010	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	25	PLASTIC/EPOXY	GAN	1	30 dBm	3	600 mA	COMPONENT	-1.8,24	LCC24,.18X.2,20	50 ohm			21.1 dB					7900 MHz	11000 MHz
BGA6130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY		1			250 mA		3.6	SOLCC8,.12,20		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD		e4
SBF-4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	19 dBm		98 mA	COMPONENT	4.9	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	MATTE TIN		e3	0 MHz	500 MHz
MGA-87563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.8		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn)		e3	500 MHz	4000 MHz
TQP3M9018	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	23 dBm		100 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	50 MHz	4000 MHz
XP1035-QH-0G0T	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		15 dBm			COMPONENT	6	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-55 Cel	MATTE TIN		e3	5900 MHz	9500 MHz
ADL5611ARKZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm		124 mA	COMPONENT	5	TO-243	50 ohm		105 Cel	14.3 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	30 MHz	6000 MHz
MMG3014NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.5 dB		MATTE TIN		e3	40 MHz	4000 MHz
QPA2735TR7X	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		105 mA	COMPONENT	3.5	LCC16,.16SQ,20	50 ohm		85 Cel	26 dB	-40 Cel				13750 MHz	18000 MHz
SKY65111-348LF	Skyworks Solutions	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	8		COMPONENT	3.5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel	39.5 dB	-40 Cel	TIN		e3	600 MHz	1100 MHz
RF3827SR	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			130 mA		8	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
AMMP-6220-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm		70 mA	COMPONENT	3	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		22 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
TQL9092	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	33 dBm		85 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		105 Cel	21 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	600 MHz	4200 MHz
HMC902LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				5000 MHz	10000 MHz
MSA-1105	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers	85 Cel		-25 Cel	Tin (Sn)		e3	50 MHz	1300 MHz
BGA2870,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			18.5 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
HMC462LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	2000 MHz	20000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.