PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
INA-10386-BLK	Agilent Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.5	55 mA	COMPONENT	6	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		23 dB			LOW NOISE		0 MHz	1800 MHz
LEE-29+	Mini-circuits	WIDE BAND LOW POWER		4	PLASTIC/EPOXY			1	15 dBm	1.6		COMPONENT	3.6	MODULE,4LEAD(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	13.3 dB	-40 Cel	TIN SILVER OVER NICKEL	USABLE TO 10 GHZ	e2	0 MHz	8000 MHz
MAX2659ELT/V+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel
MGA-31189-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	25 dBm		128 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)	LOW NOISE	e3	50 MHz	2000 MHz
MGA-53543-BLKG	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY			1	13 dBm	2	70 mA	COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers		14 dB		Matte Tin (Sn)	LOW NOISE	e3	50 MHz	6000 MHz
PGA-102+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	28 dBm		120 mA	COMPONENT	3.3	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.4 dB	-40 Cel	TIN SILVER OVER NICKEL	LOW NOISE, HIGH RELIABILITY	e2	50 MHz	6000 MHz
RA07H4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	14.77 dBm	4		MODULE	3.5,12.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RFPA3800SR	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HYBRID	IEC-61249-2-21	1	20 dBm	5	2300 mA	COMPONENT	7	SOP8,.25		RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel		LOW NOISE		150 MHz	960 MHz
ALM-32120-BLKG	Broadcom	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS		1	28 dBm		910 mA	COMPONENT	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		12.5 dB					700 MHz	1000 MHz
BGA2818,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			22.7 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
GALI-6+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm	2	85 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	4000 MHz
GALI-6	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm	2		COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz
GALI-6F	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm	2.2		COMPONENT	4.8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz
GALI-6F+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm	2.2		COMPONENT	4.8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	4000 MHz
GALI-6F+F55	Mini-circuits		SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1					4.8	TO-243		RF/Microwave Amplifiers	85 Cel		-45 Cel
HMC327MS8GTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC455LP3TR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	25 dBm	1.4		COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	9 dB	-40 Cel				1700 MHz	2500 MHz
HMC476MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	6000 MHz
HMC490LP5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	12000 MHz	16000 MHz
HMC490LP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	12000 MHz	16000 MHz
HMC490LP5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel				12000 MHz	16000 MHz
HMC490LP5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1					5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
MAALSS0044	TE Connectivity		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1			11 mA		3/5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAR-8ASM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		1	13 dBm	1.8		COMPONENT	3.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	0 MHz	1000 MHz
MAR-8ASM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		1	13 dBm	1.8		COMPONENT	3.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier	LOW NOISE	e2	0 MHz	1000 MHz
MAX2244EBL-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	9	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	6	205 mA	COMPONENT	3	BGA9,3X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
MAX2611EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	13 dBm	1.6		COMPONENT	3.8	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	0 MHz	1100 MHz
MAX2611EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	13 dBm	1.6		COMPONENT	3.8	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	0 MHz	1100 MHz
MGA-13116-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	20 dBm		131 mA	COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers		36.5 dB		Tin (Sn)		e3	400 MHz	1500 MHz
MGA-30689-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		125 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.7 dB		Tin (Sn)	LOW NOISE	e3	40 MHz	3000 MHz
MGA-632P8-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	4	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		16 dB		Matte Tin (Sn)		e3	1400 MHz	3800 MHz
MMA044PP3	Microchip Technology	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1			78 mA	COMPONENT	4	LCC16,.12SQ,20	50 ohm		85 Cel	16 dB	-40 Cel				6000 MHz	18000 MHz
QPA4501SR	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	36	PLASTIC/EPOXY	GAN		1	12 dBm	10		COMPONENT		LCC36,.24X.4,27	50 ohm			26 dB					4400 MHz	5000 MHz
SGL0363ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm	10	7 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel				5 MHz	2000 MHz
SST13LP05-MLCF	Microchip Technology	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			2				COMPONENT	3.3	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn)	HIGH RELIABILITY, IT CAN ALSO OPERATE AT 4920 TO 5805 MHZ	e3	2400 MHz	2500 MHz
TGA2958-SM	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAN		1	20 dBm	3	70 mA	COMPONENT	-2.7,20		50 ohm			25 dB					13000 MHz	18000 MHz
UPC2710TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm		29 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		1000 MHz
XTRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1				COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	16 dB	-40 Cel				10 MHz	11000 MHz
ALM-32220-BLKG	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
AMMP-5618-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		140 mA	COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		13 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
BGA2867,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			23.2 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGU6005/N2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.43		COMPONENT	1.8/2.85	SOLCC6,.04,20	50 ohm		150 Cel	17.5 dB					1559 MHz	1610 MHz
BGU8103	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel				1559 MHz	1610 MHz
BLM7G1822S-20PBGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
ERA-2SM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	15 dBm	1.6	40 mA	COMPONENT	3	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	11.9 dB	-45 Cel	TIN SILVER OVER NICKEL	USABLE TO 10 GHZ	e2	0 MHz	6000 MHz
ERA-2SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	15 dBm	1.7	40 mA	COMPONENT	3	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-45 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.