Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-45 Cel |
6000 MHz |
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|
Skyworks Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
1300 mA |
COMPONENT |
3.6 |
LCC12,.32SQ,75/64 |
50 ohm |
85 Cel |
35 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
390 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
TIN LEAD |
e0 |
5000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
2000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
42 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
27000 MHz |
31500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
4000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC24,.2SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
950 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
3300 MHz |
3800 MHz |
|||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
950 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
3300 MHz |
3800 MHz |
|||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
950 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
3300 MHz |
3800 MHz |
|||||||
Texas Instruments |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
4.8 |
TSSOP24,.25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||||
|
Texas Instruments |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
100 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15.7 dB |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
e4 |
50 MHz |
400 MHz |
||||||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAAS |
15 dBm |
2 |
COMPONENT |
3.3 |
TSSOP20,.25 |
RF/Microwave Amplifiers |
80 Cel |
17 dB |
-30 Cel |
1850 MHz |
1910 MHz |
|||||||||||
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
10 dBm |
6 |
3/5 |
TSSOP20,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
27 dB |
-40 Cel |
870 MHz |
925 MHz |
|||||||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
|
Texas Instruments |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
100 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15.7 dB |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
e4 |
50 MHz |
400 MHz |
||||||||||
|
Texas Instruments |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
100 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
350 MHz |
||||||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
950 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
3300 MHz |
3800 MHz |
|||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
100 ohm |
105 Cel |
16 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
11000 MHz |
||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
100 ohm |
105 Cel |
16 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
10 MHz |
11000 MHz |
||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
65 mA |
COMPONENT |
3.3 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
1 MHz |
6000 MHz |
|||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
95 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
6000 MHz |
|||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
85 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
4000 MHz |
|||||||||
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
85 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
4000 MHz |
|||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
85 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
4000 MHz |
|||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
65 mA |
COMPONENT |
3.3 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
1 MHz |
6000 MHz |
|||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
85 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
4000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
0 dBm |
95 mA |
COMPONENT |
5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.6 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
44 MHz |
880 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
0 dBm |
95 mA |
COMPONENT |
5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.6 dB |
-40 Cel |
TIN LEAD |
e0 |
44 MHz |
880 MHz |
||||||||
Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
115 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
52 mA |
COMPONENT |
3/5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
20000 MHz |
||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3400 MHz |
3800 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
200 MHz |
4000 MHz |
|||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
105 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4900 MHz |
5900 MHz |
|||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
17 dBm |
COMPONENT |
3.6/5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
2200 MHz |
2800 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
14 dBm |
COMPONENT |
8 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
75 mA |
3/5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.