NARROW BAND MEDIUM POWER RF & Microwave Amplifiers 427

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

ADL5532ACPZ-WP

Analog Devices

NARROW BAND MEDIUM POWER

12 dBm

COMPONENT

50 ohm

85 Cel

15.5 dB

-40 Cel

Matte Tin (Sn)

e3

20 MHz

500 MHz

ADL5323ACPZ-WP

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

18 dBm

COMPONENT

5

SOLCC8,.11,20

50 ohm

RF/Microwave Amplifiers

85 Cel

17.5 dB

-40 Cel

Matte Tin (Sn)

WAFFLE PACK

e3

1700 MHz

2400 MHz

HMC455LP3E

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

25 dBm

1.4

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

9 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1700 MHz

2500 MHz

HMC461LP3E

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

2

30 dBm

1.2

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

9 dB

-40 Cel

Matte Tin (Sn)

e3

1700 MHz

2200 MHz

HMC457QS16GE

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

5

SSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

22 dB

-40 Cel

MATTE TIN

e3

1700 MHz

2200 MHz

HMC461LP3

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

2

30 dBm

1.2

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

9 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

1700 MHz

2200 MHz

ADL5571

Analog Devices

NARROW BAND MEDIUM POWER

10

COMPONENT

50 ohm

85 Cel

29 dB

-45 Cel

2500 MHz

2700 MHz

ADL5571-EVALZ

Analog Devices

NARROW BAND MEDIUM POWER

10

COMPONENT

50 ohm

85 Cel

29 dB

-40 Cel

2500 MHz

2700 MHz

HMC413QS16GE

Analog Devices

NARROW BAND MEDIUM POWER

15 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1600 MHz

2200 MHz

ADL5322ACPZ-R7

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

18 dBm

COMPONENT

5

SOLCC8,.11,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18.3 dB

-40 Cel

Matte Tin (Sn)

TAPE AND REEL

e3

700 MHz

1000 MHz

ADL5323ACPZ-R7

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

18 dBm

COMPONENT

5

SOLCC8,.11,20

50 ohm

RF/Microwave Amplifiers

85 Cel

17.5 dB

-40 Cel

Matte Tin (Sn)

TAPE AND REEL

e3

1700 MHz

2400 MHz

HMC455LP3ETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

25 dBm

1.4

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

9 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1700 MHz

2500 MHz

HMC409LP4TR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC408LP3E

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

17 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

5100 MHz

5900 MHz

HMC408LP3

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

17 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

5100 MHz

5900 MHz

HMC413QS16GETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

3.6,5

SSOP16,.25

50 ohm

85 Cel

18 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1600 MHz

2200 MHz

HMC408LP3ETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

17 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

5100 MHz

5900 MHz

HMC457QS16GETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

5

SSOP16,.25

50 ohm

85 Cel

22 dB

-40 Cel

MATTE TIN

e3

1700 MHz

2200 MHz

HMC409LP4

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

10 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

28 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

3300 MHz

3800 MHz

ADL5571ACPZ-R7

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10

COMPONENT

3.5/5

LCC16,.16SQ,25

50 ohm

RF/Microwave Amplifiers

85 Cel

29 dB

-40 Cel

Matte Tin (Sn)

e3

2500 MHz

2700 MHz

ADL5534ACPZ-WP

Analog Devices

NARROW BAND MEDIUM POWER

12 dBm

COMPONENT

50 ohm

85 Cel

18.8 dB

-40 Cel

20 MHz

500 MHz

HMC685LP4

Analog Devices

NARROW BAND MEDIUM POWER

26 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

SMA

e0

1700 MHz

2200 MHz

HMC461LP3TR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

2

30 dBm

1.2

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

9 dB

-40 Cel

1700 MHz

2200 MHz

HMC685LP4E

Analog Devices

NARROW BAND MEDIUM POWER

26 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

SMA

e3

1700 MHz

2200 MHz

ADL5322ACPZ-WP

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

18 dBm

COMPONENT

5

SOLCC8,.11,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18.3 dB

-40 Cel

Matte Tin (Sn)

WAFFLE PACK

e3

700 MHz

1000 MHz

HMC408LP3TR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

17 dB

-40 Cel

5100 MHz

5900 MHz

ADL5531ACPZ-WP

Analog Devices

NARROW BAND MEDIUM POWER

12 dBm

COMPONENT

50 ohm

85 Cel

19.7 dB

-40 Cel

Matte Tin (Sn)

e3

20 MHz

500 MHz

HMC685LP4ETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BICMOS

140 mA

5

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

1700 MHz

2200 MHz

HMC413QS16G

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

3.6/5

SSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

1600 MHz

2200 MHz

MAX2232EEE+T

Analog Devices

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Matte Tin (Sn) - annealed

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e3

800 MHz

1000 MHz

MAX2233EEE+

Analog Devices

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Matte Tin (Sn) - annealed

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e3

800 MHz

1000 MHz

MAX2645EUB+

Analog Devices

NARROW BAND MEDIUM POWER

16 dBm

COMPONENT

50 ohm

85 Cel

12.9 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

3400 MHz

3800 MHz

MAX2057ETX+T

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

1700 MHz

2500 MHz

MAX2057ETX+TD

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1700 MHz

2500 MHz

MAX2645EUB+T

Analog Devices

NARROW BAND MEDIUM POWER

16 dBm

COMPONENT

50 ohm

85 Cel

12.9 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

3400 MHz

3800 MHz

MAX2233EEE+T

Analog Devices

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Matte Tin (Sn) - annealed

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e3

800 MHz

1000 MHz

MAX2057ETX+D

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1700 MHz

2500 MHz

MAX2057ETX+

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

TIN LEAD

e0

1700 MHz

2500 MHz

MAX2242EBC+W

Analog Devices

NARROW BAND MEDIUM POWER

DB-57006-600

STMicroelectronics

NARROW BAND MEDIUM POWER

30

COAXIAL

85 Cel

17 dB

-20 Cel

300 MHz

600 MHz

DB-54003L-930

STMicroelectronics

NARROW BAND MEDIUM POWER

20

COAXIAL

85 Cel

6.8 dB

-20 Cel

860 MHz

930 MHz

BGY122B

NXP Semiconductors

NARROW BAND MEDIUM POWER

7 dBm

3

MODULE

50 ohm

100 Cel

27.8 dB

-30 Cel

872 MHz

905 MHz

BGY110G

NXP Semiconductors

NARROW BAND MEDIUM POWER

4.77 dBm

2

COMPONENT

50 ohm

90 Cel

32.3 dB

902 MHz

928 MHz

BGY119A

NXP Semiconductors

NARROW BAND MEDIUM POWER

7 dBm

3

COMPONENT

50 ohm

100 Cel

27.8 dB

-30 Cel

824 MHz

849 MHz

A3I35D012WNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

2

26 dBm

COMPONENT

28

FLNG,.72"H.SPACE

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

2

26 dBm

COMPONENT

28

FLNG,.72"H.SPACE

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

MRFIC1856R2

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

GAAS

2

15 dBm

10

COMPONENT

-4.4,4.8

TSSOP20,.25

RF/Microwave Amplifiers

85 Cel

29 dB

-35 Cel

Tin/Lead (Sn/Pb)

IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ

e0

824 MHz

849 MHz

934056726112

NXP Semiconductors

NARROW BAND MEDIUM POWER

COMPONENT

75 ohm

100 Cel

25 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

5 MHz

65 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.