NARROW BAND MEDIUM POWER RF & Microwave Amplifiers 427

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
BGY115D	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				902 MHz	928 MHz
MW6IC1940GNBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
BGY115C	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
BGY115P	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
BGY118A	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGY110F	NXP Semiconductors	NARROW BAND MEDIUM POWER						4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					890 MHz	915 MHz
BGY120D	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				898 MHz	928 MHz
BGY115A	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGY120B	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				872 MHz	905 MHz
CGY2030M-T	NXP Semiconductors	NARROW BAND MEDIUM POWER						5 dBm			COMPONENT			50 ohm		85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
BGY115B	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
BGY122AT/R	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		MODULE			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGY110E	NXP Semiconductors	NARROW BAND MEDIUM POWER						4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					872 MHz	905 MHz
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
BGY110A	NXP Semiconductors	NARROW BAND MEDIUM POWER						3 dBm	50		MODULE			50 ohm		90 Cel						824 MHz	849 MHz
MW6IC1940NBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
BGY110D	NXP Semiconductors	NARROW BAND MEDIUM POWER						4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					824 MHz	849 MHz
BGS8L4UK	NXP Semiconductors	NARROW BAND MEDIUM POWER
AFLP5G35645	NXP Semiconductors	NARROW BAND MEDIUM POWER
BGY115C/P	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	6					50 ohm		100 Cel		-30 Cel				890 MHz	915 MHz
BGY110B	NXP Semiconductors	NARROW BAND MEDIUM POWER						3 dBm	50		MODULE			50 ohm		90 Cel						872 MHz	905 MHz
BGY202	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
SA2411DH	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1				COMPONENT	3	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	2400 MHz	2500 MHz
BGY119B	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
BGY120A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				824 MHz	849 MHz
CGY2014ATW	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	10 dBm		300 mA	COMPONENT	2.8,3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
BGY122ATRAY	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3					50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGS67A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY207	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				880 MHz	915 MHz
AFLP5G25641	NXP Semiconductors	NARROW BAND MEDIUM POWER
BGY118D	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				898 MHz	928 MHz
CGY2032BTS	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		800 mA	COMPONENT	3.2	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				1880 MHz	1900 MHz
BGY118B	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
BGS67A,112	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY122A	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		MODULE			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGY280	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	10 dBm	3		COMPONENT	3.6	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
934056726118	NXP Semiconductors	NARROW BAND MEDIUM POWER									COMPONENT			75 ohm		100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
MMG2401NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1				COMPONENT	3.3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MMA20312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		Matte Tin (Sn)		e3	1800 MHz	2200 MHz
MML09231HT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1			70 mA		5	SOLCC8,.08,20		RF/Microwave Amplifiers				Tin (Sn)		e3
MHVIC2115NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		31 dB					1600 MHz	2600 MHz
MMA20312BVT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		MATTE TIN		e3	1800 MHz	2200 MHz
MHV5IC2215NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		23 dB					1500 MHz	2200 MHz
935379914528	NXP Semiconductors	NARROW BAND MEDIUM POWER
BGA2450	NXP Semiconductors	NARROW BAND MEDIUM POWER						10 dBm			COMPONENT						20 dB					2400 MHz	2500 MHz
935379913528	NXP Semiconductors	NARROW BAND MEDIUM POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.