NARROW BAND MEDIUM POWER RF & Microwave Amplifiers 427

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2057ETX-T	Maxim Integrated	NARROW BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2500 MHz
MAX2233EEE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.5		COMPONENT	3/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MAX2251EBE-T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.76		COMPONENT	3/5	BGA16,4X4,20	50 ohm	RF/Microwave Amplifiers	85 Cel	24.8 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	824 MHz	849 MHz
MAX2247EBC+	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	10	350 mA	COMPONENT	3	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MAX2242EBC-T10	Maxim Integrated	NARROW BAND MEDIUM POWER						10 dBm	2.5		COMPONENT			50 ohm		70 Cel	25.5 dB	0 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
MAX2247EBC-T10	Maxim Integrated	NARROW BAND MEDIUM POWER						5 dBm	10		COMPONENT			50 ohm		70 Cel	25 dB	0 Cel	Tin/Lead (Sn/Pb)		e0	2400 MHz	2500 MHz
MAX2268EUE+T	Maxim Integrated	NARROW BAND MEDIUM POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	25.5 dB	-40 Cel	Matte Tin (Sn)		e3	887 MHz	925 MHz
MAX2247EWC+T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	10	350 mA	COMPONENT	3	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel				2400 MHz	2500 MHz
MAX2268EUE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	6 dBm	2.5	90 mA	COMPONENT	2.7/4.5	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	887 MHz	925 MHz
MAX2242EBC+T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	10 dBm	2.5	335 mA	COMPONENT	2.7/3.6	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	70 Cel	25.5 dB	0 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MAX2268EUE+	Maxim Integrated	NARROW BAND MEDIUM POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	25.5 dB	-40 Cel	MATTE TIN		e3	887 MHz	925 MHz
MAX2247EBC	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	10	350 mA	COMPONENT	3	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	70 Cel	25 dB	0 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
MAX2232EEE-T	Maxim Integrated	NARROW BAND MEDIUM POWER						10 dBm	1.5		COMPONENT			50 ohm		85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MAX2216EBV	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	30	PLASTIC/EPOXY		2	14 dBm	10		COMPONENT	3/5	BGA30,5X6,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ	e0	880 MHz	915 MHz
MAX2268EUE-T	Maxim Integrated	NARROW BAND MEDIUM POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	25.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	887 MHz	925 MHz
MAX2242EBC-T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	10 dBm	2.5	335 mA	COMPONENT	2.7/3.6	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	70 Cel	25.5 dB	0 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2216EBV-T	Maxim Integrated	NARROW BAND MEDIUM POWER						14 dBm	10		COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ	e0	880 MHz	915 MHz
MAX2242EBC+TW	Maxim Integrated	NARROW BAND MEDIUM POWER						10 dBm	2.5		COMPONENT			50 ohm		70 Cel	25.5 dB	0 Cel				2400 MHz	2500 MHz
S-AU81	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	CERAMIC		1					3.6	DILCC6,.25,67		RF/Microwave Amplifiers	60 Cel		-20 Cel
TG2006FA	Toshiba	NARROW BAND MEDIUM POWER
TMD3438-1	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS						7.5,-5	QFL24,.37SQ		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S-AU83H	Toshiba	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-30 Cel				450 MHz	520 MHz
S9747	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				350 mA		6	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S-AU76	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	CERAMIC	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
S-AU55	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		12 dBm	3	390 mA	COMPONENT	5.5,5.8	SMSIP5/6H,.5	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
TA4401CT	Toshiba	NARROW BAND MEDIUM POWER						-3 dBm	2.5		COMPONENT			50 ohm		85 Cel	27.5 dB	-40 Cel				1880 MHz	1920 MHz
TMD1414-1L	Toshiba	NARROW BAND MEDIUM POWER			METAL		1	20 dBm		1200 mA	COMPONENT	7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	100 Cel	26 dB	-60 Cel				14000 MHz	14500 MHz
TG2006F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		10 dBm	20	150 mA	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel				1895 MHz	1918 MHz
S-AU77	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0	872 MHz	905 MHz
TMD1414-2C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1	20 dBm		1800 mA	MODULE	7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers							13750 MHz	14500 MHz
TMD1414-2B	Toshiba	NARROW BAND MEDIUM POWER
TG2005F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			180 mA		-1.3,3	TSSOP8,.16		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TG2002V	Toshiba	NARROW BAND MEDIUM POWER						3 dBm	20		MODULE			50 ohm		60 Cel		-10 Cel				1895 MHz	1918 MHz
TG2006FB	Toshiba	NARROW BAND MEDIUM POWER
TMD1414-1	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1000 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD5872-2-321	Toshiba	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1					10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel
TMD1414-1B	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-1C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TG2014CS	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	18		HYBRID	1	6 dBm	3	1500 mA	COMPONENT	4.5	LCC18,.1X.14,20			85 Cel	24 dB	-30 Cel				1750 MHz	1910 MHz
TMD1414-1G	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1					7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-2	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1800 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
F1420NLGK8	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	18 dBm	2	120 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	16.4 dB	-40 Cel	TIN	HIGH RELIABILITY	e3	700 MHz	1100 MHz
PF0067A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4,4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
F1421NLGK8	Renesas Electronics	NARROW BAND MEDIUM POWER	PANEL MOUNT	24	PLASTIC/EPOXY		1	18 dBm	2	153 mA	COMPONENT	5		50 ohm		105 Cel	18.8 dB	-40 Cel	Tin (Sn)	HIGH RELIABILITY	e3	1700 MHz	2200 MHz
UPG2301T5L-E2-A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	10 dBm		130 mA	COMPONENT	3.3	LCC12,.08SQ,20		RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel				2400 MHz	2500 MHz
PF1016	Renesas Electronics	NARROW BAND MEDIUM POWER
PF1010A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						6	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers
RA81F1475STGNM#BD0	Renesas Electronics	NARROW BAND MEDIUM POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.