Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MC-5875A	Renesas Electronics				METAL	GAAS						3	NEC,CASE T-20		RF/Microwave Amplifiers	70 Cel		-50 Cel
UPC1679G-E1	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			49 mA		5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-45 Cel	Tin/Lead (Sn/Pb)		e0
HA21008(5V)UL	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT
UPC2710T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				29 mA		5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
PF0042	Renesas Electronics	NARROW BAND HIGH POWER						13 dBm	1.5		MODULE			50 ohm		110 Cel		-30 Cel				872 MHz	905 MHz
PF01419B	Renesas Electronics	NARROW BAND HIGH POWER		8	PLASTIC/EPOXY	HYBRID						3.5	MODULE,8LEAD,.54		RF/Microwave Amplifiers
F1129MBNELI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12			1	20 dBm	1	76 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	17 dB	-40 Cel	TIN	LOW NOISE	e3	3000 MHz	4200 MHz
UPG110P	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		125 Cel	12 dB	-65 Cel		HIGH RELIABILITY		2000 MHz	8000 MHz
UPC2712T-E3-A	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6		2600 MHz
UPG2318T5N-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm		140 mA	COMPONENT	3.3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	25.5 dB	-45 Cel				2400 MHz	2500 MHz
MC-7883-A	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	22 dB	-30 Cel	TIN BISMUTH	LOW NOISE	e6	40 MHz	870 MHz
UPC8151TA	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
HA31006ANPTL-E	Renesas Electronics	WIDE BAND MEDIUM POWER						5 dBm			COMPONENT					85 Cel	16 dB	-10 Cel
UPC8236T6N-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		8 mA	COMPONENT	2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel
F1429LBNELI	Renesas Electronics	WIDE BAND LOW POWER																	Tin (Sn)		e3
UPC2776TB-A	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6		2700 MHz
F1471NTGI8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	18 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	13 dB	-40 Cel	TIN		e3	400 MHz	4200 MHz
UPC2771T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				45 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
RA81F1495STGNM#KD0	Renesas Electronics	NARROW BAND MEDIUM POWER
RA81F1495STGNM#BD0	Renesas Electronics	NARROW BAND MEDIUM POWER
F6921AVRI8	Renesas Electronics	WIDE BAND LOW POWER																	Tin (Sn)		e3
F6921AVRI	Renesas Electronics	WIDE BAND LOW POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.