Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPC1654P	Renesas Electronics					BIPOLAR					48 mA		10	DIE OR CHIP		RF/Microwave Amplifiers	70 Cel		-20 Cel
UPG2314T5N-E2-AZ	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1			70 mA		3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MC-7833-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC8151TB	Renesas Electronics	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel		HIGH RELIABILITY		100 MHz	1900 MHz
PF0065	Renesas Electronics	NARROW BAND MEDIUM POWER
UPC8102T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR					.65 mA	COMPONENT	1	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	150 MHz	330 MHz
PF0010	Renesas Electronics	NARROW BAND LOW POWER							13 dBm	1.5					50 ohm		100 Cel		-40 Cel				820 MHz	850 MHz
F1129LBNELI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12				1	22 dBm	1	78 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	17 dB	-40 Cel	TIN	LOW NOISE	e3	1400 MHz	3200 MHz
PF08134B	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			2	10 dBm	3		COMPONENT	3.5	SOLCC8,.3,47	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ		824 MHz	849 MHz
UPC2711TB	Renesas Electronics	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	30 dB	-40 Cel		HIGH RELIABILITY			2900 MHz
PF0415A	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HYBRID							4.8	SOLCC8,.3		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPG2251T6M-E2-A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		1	10 dBm		265 mA	COMPONENT	3	LCC12,.08SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel				2400 MHz	2500 MHz
PF08103B	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	8	CERAMIC	MOS		2	10 dBm	3.5		MODULE	3.5	DILCC8,.46	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		1710-1785MHZ		880 MHz	915 MHz
MC5156	Renesas Electronics		THROUGH HOLE MOUNT	11	PLASTIC/EPOXY	HYBRID		1			67 mA		12	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel
MC-7881-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			360 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
F6922AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm		85 Cel	19.5 dB	-40 Cel	TIN		e3	17700 MHz	21200 MHz
F0424NTGK8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		70 mA	COMPONENT	3.3/5	SOLCC8,.08,20	50 ohm		105 Cel	16 dB	-40 Cel	TIN		e3	600 MHz	4200 MHz
HA23001T	Renesas Electronics	NARROW BAND MEDIUM POWER								2.3		COMPONENT			50 ohm								1900 MHz	1900 MHz
UPC2709T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm		32 mA	COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2300 MHz
UPC2745TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC8226TK-E2-A	Renesas Electronics	WIDE BAND LOW POWER							10 dBm			COMPONENT					85 Cel	15.5 dB	-25 Cel	Tin/Bismuth (Sn/Bi)		e6
EXP8603-DNT	Renesas Electronics	WIDE BAND MEDIUM POWER																		TIN		e3
UPC2747T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR					7 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC2747TB-A	Renesas Electronics	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6		1800 MHz
UPC8181TB	Renesas Electronics	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	19 dB	-40 Cel		HIGH RELIABILITY			4000 MHz
PF0231A	Renesas Electronics	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID							4.8	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
UPG2311T5F-E2-A	Renesas Electronics		SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		1			20 mA		3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-45 Cel
HMM-11810S	Renesas Electronics					GAAS	MIL-STD-883 Class S (Modified)				275 mA		8	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
UPC1676G-T1-A	Renesas Electronics	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	19 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6	1000 MHz
PF0311	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID							9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
UPC3236TK-E2-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	0 dBm		31 mA	COMPONENT	5	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35 dB	-40 Cel		LOW NOISE		1000 MHz	2200 MHz
UPD5729T6J-E4-A	Renesas Electronics		SURFACE MOUNT	3	PLASTIC/EPOXY			1			.35 mA		3	LCC3(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
F1431BNBGK	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24				1	9 dBm	1.38	177 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	11.7 dB	-40 Cel	TIN		e3	350 MHz	3000 MHz
UPC8130TA-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm		15 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-25 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	800 MHz	1500 MHz
PF0040	Renesas Electronics	NARROW BAND HIGH POWER							13 dBm	1.5		MODULE			50 ohm		110 Cel		-30 Cel				824 MHz	849 MHz
HA21008	Renesas Electronics	WIDE BAND LOW POWER								2		COMPONENT					70 Cel		-10 Cel				950 MHz	2050 MHz
MC-7894-AZ	Renesas Electronics	WIDE BAND HIGH POWER
UPC2715T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR							3.4	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
F0111NBTI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16.5 dB	-40 Cel	TIN		e3	2200 MHz	4200 MHz
HMM-10510S	Renesas Electronics					GAAS	MIL-STD-883 Class S (Modified)				440 mA		9	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
UPC1679G	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR							5	DIP8,.3		RF/Microwave Amplifiers	85 Cel		-45 Cel	Tin/Lead (Sn/Pb)		e0
PF0313	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID							7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
MC-7884-A	Renesas Electronics	WIDE BAND LOW POWER										MODULE			75 ohm		85 Cel	25 dB	-30 Cel	TIN BISMUTH	LOW NOISE	e6	40 MHz	870 MHz
UPC1679B	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	BIPOLAR							5	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPC8179TB	Renesas Electronics	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm		85 Cel	13 dB	-40 Cel		HIGH RELIABILITY		100 MHz	2400 MHz
MC-7846-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			375 mA		24	SOT-115J		RF/Microwave Amplifiers
F1429MBNELI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12				1	20 dBm	1.1	86 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	18 dB	-40 Cel	TIN	LOW NOISE	e3	3000 MHz	4200 MHz
HMR-10504S	Renesas Electronics					GAAS	MIL-STD-883 Class S (Modified)				300 mA		12	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.