Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MC-7894	Renesas Electronics	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			385 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	1000 MHz
PF0415B	Renesas Electronics	NARROW BAND MEDIUM POWER
UPC2745T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				10 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
F1471NTGI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	18 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	13 dB	-40 Cel	TIN		e3	400 MHz	4200 MHz
UPC2746TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPD5702TU-E2	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	6 dBm		230 mA	COMPONENT	3	SOLCC8,.08,20		RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
UPD5750T7D-E4A-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1			4.5 mA		1.8	BGA6,2X3,10		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPG103P	Renesas Electronics					GAAS				80 mA		5	DIE OR CHIP		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPC3211GR-E1	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				51 mA		9	SSOP20,.25		RF/Microwave Amplifiers	70 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
HA22002TEL	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT
UPC1676G-A	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	19 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6		1200 MHz
UPD5702TU	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY		1			230 mA		3	SOLCC8,.08,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPG2314T5N-E2-A	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		70 mA	COMPONENT	3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				2400 MHz	2500 MHz
UPC8152TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	100 MHz	1900 MHz
UPC8240T6N-E2-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			9 mA		1.8/2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC3234GV-E1-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			38 mA	COMPONENT	5	SSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	1.5 dB	-40 Cel				30 MHz	100 MHz
UPC2776TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2700 MHz
MC-7882-A	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	20 dB	-30 Cel	TIN BISMUTH	LOW NOISE	e6	40 MHz	870 MHz
UPC8120	Renesas Electronics	WIDE BAND LOW POWER															10.5 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	1900 MHz
PF0025	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						6	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
F1129LBNELI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12			1	22 dBm	1	78 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	17 dB	-40 Cel	TIN	LOW NOISE	e3	1400 MHz	3200 MHz
UPC2708TB	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	22 dB	-40 Cel		HIGH RELIABILITY			2900 MHz
EXP8602-DNT	Renesas Electronics																		TIN		e3
PF08103A	Renesas Electronics	NARROW BAND HIGH POWER						10 dBm	3		MODULE			50 ohm		100 Cel		-30 Cel		1710-1785MHZ		880 MHz	915 MHz
MC-7884-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			360 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC8151TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		5.8 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
MC-5964-E1	Renesas Electronics	WIDE BAND MEDIUM POWER						8 dBm	3		COMPONENT			50 ohm		90 Cel		-30 Cel				872 MHz	905 MHz
UPC2771T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				45 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC3210TB-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				19.5 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC2712TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA	COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	30 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC2747TB	Renesas Electronics	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel		HIGH RELIABILITY			1800 MHz
HA22033	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				2.5 mA		2.7	TSOP5/6,.11,37		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
HA21008(5V)UR	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT
UPC2762TB-E3	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		35 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	800 MHz	1900 MHz
UPC2749TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		8 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2900 MHz
UPC1658A	Renesas Electronics			8	METAL	BIPOLAR				18 mA		10	CAN8,.2		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
UPG173TA	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1			30 mA		2.8	TSOP6,.11,37		RF/Microwave Amplifiers	90 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
PF0055	Renesas Electronics	NARROW BAND LOW POWER						13 dBm	2					50 ohm		100 Cel		-30 Cel				824 MHz	849 MHz
F1490NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	22 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33 dB	-40 Cel	TIN		e3	1800 MHz	6400 MHz
UPG2255T6N-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	5 dBm		240 mA	COMPONENT	3.3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel				1880 MHz	1930 MHz
MC-5973	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				450 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
PF04115B	Renesas Electronics	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel		-30 Cel				1850 MHz	1910 MHz
PF0414A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	CERAMIC	HYBRID		13 dBm	3		COMPONENT	4.8	SOLCC8,.3		RF/Microwave Amplifiers	100 Cel		-30 Cel				1710 MHz	1785 MHz
UPD5742T6J-E4-A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	MOS	1	-10 dBm		.48 mA	COMPONENT	1.5/5	LCC3(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel
PF01411A	Renesas Electronics	NARROW BAND HIGH POWER		8	PLASTIC/EPOXY	HYBRID						4.8	MODULE,8LEAD,.54		RF/Microwave Amplifiers
UPC2776TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2700 MHz
MC-7600	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				700 mA		5.8,-2.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
HA23001TEL	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.