Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPC2763TB-E3	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		35 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	800 MHz	1900 MHz
PF0120	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.26"H.SPACE		RF/Microwave Amplifiers
UPC2712TB	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	30 dB	-40 Cel		HIGH RELIABILITY			2600 MHz
UPC8119T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
MC-7831-HA	Renesas Electronics				PLASTIC/EPOXY	GAAS	1			240 mA		24	SOT-115J		RF/Microwave Amplifiers
UPC1654B	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				48 mA		10	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	70 Cel		-20 Cel
F1478NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
MC-5805	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID				47 mA		10	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
MC-5806A	Renesas Electronics		THROUGH HOLE MOUNT	6	METAL	HYBRID						3	QUIP6A,.4/.6,80		RF/Microwave Amplifiers	70 Cel		-50 Cel	Tin/Lead (Sn/Pb)		e0
MC-7891-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			385 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	1000 MHz
UPC3219GV-E1-A	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	10 MHz	100 MHz
UPC1688G-T2	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PF01410A	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HYBRID						4.8	SMDIP8,.3		RF/Microwave Amplifiers
MC-5809N	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
UPG2301TQ-E1-A	Renesas Electronics		SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS	1			130 mA		3.3	SOLCC10,.1,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MC-7896-AZ	Renesas Electronics	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			385 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	25.6 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	1000 MHz
UPC2746T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				10 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC3224TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		12 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC8211TK-E2	Renesas Electronics	NARROW BAND LOW POWER						10 dBm			COMPONENT					85 Cel	15.5 dB	-25 Cel
UPC2746TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel		HIGH RELIABILITY		500 MHz	1500 MHz
UPC2792TB-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				24 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
MC-5950	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				370 mA		5.8,-5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPB1509GV	Renesas Electronics	WIDE BAND HIGH POWER														85 Cel		-40 Cel
PF0349	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
F1431BNBGK8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24			1	9 dBm	1.38	177 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	11.7 dB	-40 Cel	TIN		e3	350 MHz	3000 MHz
UPC8218T5A-E1	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3	16 dBm		30 mA	COMPONENT	3	SOLCC16,.1,16		RF/Microwave Amplifiers	85 Cel	39.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
PF0210	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.26"H.SPACE		RF/Microwave Amplifiers
UPC1675P	Renesas Electronics					BIPOLAR				22 mA		5	DIE OR CHIP		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPC1652G	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				25 mA		5	SOP8,.25		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
UPC2748TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		8 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	200 MHz	1500 MHz
UPC2749TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	0 dBm		8 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6		2900 MHz
UPC8232T5N-E2-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		4.1 mA	COMPONENT	3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel
HMM-10510C	Renesas Electronics					GAAS				440 mA		9	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
UPC2763T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				35 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
MC-7856	Renesas Electronics				PLASTIC/EPOXY	GAAS				240 mA		24	MOT CASE 714Y-02		RF/Microwave Amplifiers
PF0310A	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
UPG2301T5L-A	Renesas Electronics		SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS	1			130 mA		3.3	LCC12,.08SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC2713T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA		5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PF0015	Renesas Electronics	NARROW BAND LOW POWER						13 dBm	2					50 ohm		100 Cel		-30 Cel				824 MHz	849 MHz
F0424NTGK	Renesas Electronics	WIDE BAND LOW POWER																	TIN		e3
UPC2762T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				35 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PF0344A	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
PF0410	Renesas Electronics	NARROW BAND HIGH POWER
UPC3223TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC3226TB	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT					85 Cel	22 dB	-40 Cel
MC-7826	Renesas Electronics	WIDE BAND LOW POWER												75 ohm		85 Cel	21.5 dB	-30 Cel				50 MHz	860 MHz
IT5061	Renesas Electronics		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1					5	LCC16,.16SQ,25		RF/Microwave Amplifiers
UPC8178TB-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			2.4 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.