Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPC2710TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		29 mA	COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC2710TB	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	22 dB	-40 Cel		HIGH RELIABILITY		500 MHz	1000 MHz
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm		85 Cel	33 dB	-40 Cel					1000 MHz
UPC2710TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		29 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		1000 MHz
UPC8179TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			5.4 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
ISL55012IEZ-T7	Renesas Electronics	WIDE BAND LOW POWER																	MATTE TIN		e3
ISL55015IEZ-T7	Renesas Electronics																		MATTE TIN		e3
F1478NLGA8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
UPC1688G-T1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
F6923AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY		2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm		85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
UPC1676B	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				24 mA		5	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPG100A	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	GAAS				60 mA		+-5	QFL8,.15SQ		RF/Microwave Amplifiers	125 Cel		-65 Cel	Tin/Lead (Sn/Pb)		e0
PF0146	Renesas Electronics	NARROW BAND HIGH POWER
UPC8230TU-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		8 mA	COMPONENT	3	FL8,.09,20		RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
MC-7882	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	20 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	40 MHz	870 MHz
UPC1659A	Renesas Electronics			4	METAL	BIPOLAR				27 mA		10	CAN4,.1		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
UPG110P-L	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		125 Cel	10 dB	-65 Cel		HIGH RELIABILITY		2000 MHz	8000 MHz
UPG2137T5A	Renesas Electronics	NARROW BAND LOW POWER						0 dBm			COMPONENT					90 Cel	25 dB	-30 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1429 TO 1453 MHZ	e0	893 MHz	960 MHz
PF0032	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.26"H.SPACE		RF/Microwave Amplifiers
UPC2726T-A	Renesas Electronics	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6		1400 MHz
MC-7883-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			360 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC2709TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC2708T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				33 mA		5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPG102B-1	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE MT,.56X.19		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG101B	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	GAAS		15 dBm		143 mA	COMPONENT	8,-5	QFL8,.15SQ	50 ohm	RF/Microwave Amplifiers	80 Cel	12 dB	-50 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	3000 MHz
MC-7832-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC3219GV-E1	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel	39 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	10 MHz	100 MHz
UPC1678GV-E1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		10 dBm		60 mA	COMPONENT	5	SSOP8,.2	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2000 MHz
UPG102K-2	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE,.56X.19,LL		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG105B	Renesas Electronics				CERAMIC	GAAS				86 mA		+-5	FLANGE MT,.56X.19		RF/Microwave Amplifiers
MC-7712	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			75 ohm		85 Cel	18 dB	-30 Cel				50 MHz	770 MHz
F1420NLGK8	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	18 dBm	2	120 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	16.4 dB	-40 Cel	TIN	HIGH RELIABILITY	e3	700 MHz	1100 MHz
F1129MBNELI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12			1	20 dBm	1	76 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	17 dB	-40 Cel	TIN	LOW NOISE	e3	3000 MHz	4200 MHz
UPC8182TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		38 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel		HIGH RELIABILITY		900 MHz	2900 MHz
MC-5809	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
UPG110B	Renesas Electronics		SURFACE MOUNT	4	CERAMIC	GAAS				180 mA		8	SL,4LEAD,.18SQ		RF/Microwave Amplifiers
UPC2745T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
PF0353	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
PF0350	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
UPC2771TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY		1			45 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC2712T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		15 mA	COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0		2600 MHz
UPC2726T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		15 mA	COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	400 MHz	1600 MHz
MC5157	Renesas Electronics		THROUGH HOLE MOUNT	11	PLASTIC/EPOXY	HYBRID	1			44 mA		12	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel
UPC3232TB	Renesas Electronics	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	27 dB	-40 Cel		HIGH RELIABILITY		0 MHz	50000 MHz
UPC1653P	Renesas Electronics					BIPOLAR				25 mA		10	DIE OR CHIP		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPC8151TA-E3	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
UPC2709TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2300 MHz
F0109NBTI8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.