Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPG2134TB-E3	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1			35 mA		3,3.5	TSSOP6,.08		RF/Microwave Amplifiers	90 Cel		-30 Cel
PF0352	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID							7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
UPC2771TB	Renesas Electronics	WIDE BAND LOW POWER							13 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel		HIGH RELIABILITY		800 MHz	1900 MHz
MC-7893	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			385 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22.5 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	1000 MHz
PF1016	Renesas Electronics	NARROW BAND MEDIUM POWER
UPC8120T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPG102P-2	Renesas Electronics					GAAS					100 mA		4	DIE OR CHIP		RF/Microwave Amplifiers	125 Cel		-65 Cel
PF1010A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID							6	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers
MC-5952	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					370 mA		5.8,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPC2792TB	Renesas Electronics	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel		HIGH RELIABILITY			1200 MHz
UPG2310TK-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1			35 mA		3	FL6,.047,20		RF/Microwave Amplifiers	85 Cel		-45 Cel
UPC3221GV	Renesas Electronics	NARROW BAND LOW POWER										COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel		HIGH RELIABILITY		10 MHz	100 MHz
HA21008(5V)TL	Renesas Electronics	WIDE BAND LOW POWER										COMPONENT
UPC8182TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		38 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	900 MHz	2900 MHz
UPC2714T	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR							3.4	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC2708TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2900 MHz
MC-7862	Renesas Electronics				PLASTIC/EPOXY	GAAS					395 mA		24	MOT CASE 714Y-02		RF/Microwave Amplifiers
UPC1659B	Renesas Electronics		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR					27 mA		10	SL,4LEAD,.18SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
PF08114B	Renesas Electronics	NARROW BAND HIGH POWER							15 dBm	3		COMPONENT			50 ohm		100 Cel		-25 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
UPC8179TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		5.4 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	2400 MHz
MC-5865	Renesas Electronics				METAL	HYBRID							10	NEC,CASE MCX03		RF/Microwave Amplifiers	100 Cel		-55 Cel
HMM-10620S	Renesas Electronics					GAAS	MIL-STD-883 Class S (Modified)				100 mA		10.5	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
UPC2726T-E3-A	Renesas Electronics	WIDE BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	400 MHz	1600 MHz
RA81F1475STGNM#BD0	Renesas Electronics	NARROW BAND MEDIUM POWER
MC-7866G	Renesas Electronics				PLASTIC/EPOXY	GAAS		1			380 mA		24	MOT CASE 714Y-02		RF/Microwave Amplifiers	100 Cel		-30 Cel
MC-5963	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					460 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-7641-E1	Renesas Electronics	NARROW BAND MEDIUM POWER		8	PLASTIC/EPOXY	GAAS					770 mA		-2.5,3.5	MODULE,8LEAD,.4		RF/Microwave Amplifiers
MC-5876B	Renesas Electronics				METAL	GAAS							3	NEC,CASE T-20A		RF/Microwave Amplifiers	70 Cel		-50 Cel
MC-7832	Renesas Electronics	WIDE BAND LOW POWER										MODULE			75 ohm		85 Cel	22 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	870 MHz
UPD5702TU-A	Renesas Electronics	NARROW BAND MEDIUM POWER							6 dBm			COMPONENT					85 Cel	20 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC2749T-E3	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR					8 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
MC-5876A	Renesas Electronics				METAL	GAAS							3	NEC,CASE T-20		RF/Microwave Amplifiers	70 Cel		-50 Cel
UPC1656C	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					48 mA		10	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
MC-7847-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			375 mA		24	SOT-115J		RF/Microwave Amplifiers
UPC3241TB-E3-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		25 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel		LOW NOISE
UPC2745TB	Renesas Electronics	WIDE BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel		HIGH RELIABILITY			2700 MHz
MC-7836-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1			260 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC3215TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		17.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	2900 MHz
RA81F1475STGNM#KD0	Renesas Electronics	NARROW BAND MEDIUM POWER
UPC3223TB-E3-AZ	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			24 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC3239TB-E3-A	Renesas Electronics	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	22.5 dB	-40 Cel		LOW NOISE
HMM-11820S	Renesas Electronics					GAAS	MIL-STD-883 Class S (Modified)				80 mA		10.5	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
UPC8178TK-E2	Renesas Electronics	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel				1000 MHz	2400 MHz
UPG2135TK-E2	Renesas Electronics	NARROW BAND LOW POWER							-8 dBm			COMPONENT					90 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1429 MHz	1453 MHz
UPC8128TA	Renesas Electronics	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm		85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
MC-5875B	Renesas Electronics				METAL	GAAS							3	NEC,CASE T-20A		RF/Microwave Amplifiers	70 Cel		-50 Cel
UPC3227TB	Renesas Electronics	WIDE BAND LOW POWER										COMPONENT					85 Cel	30 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC2763TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm		35 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel		HIGH RELIABILITY		800 MHz	1900 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.