Renesas Electronics RF & Microwave Amplifiers 502

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
F0110NBTI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1500 MHz	2300 MHz
UPC2776TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		33 mA	COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC1658C	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				18 mA		10	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC1675B	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				22 mA		5	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPC3244TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-5 dBm		22 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel				1000 MHz	2200 MHz
UPC2748TB-A	Renesas Electronics	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	200 MHz	1500 MHz
MC-5951	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				370 mA		5.8,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPC1659G	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				27 mA		10	SOP6,.24		RF/Microwave Amplifiers	70 Cel		-45 Cel	Tin/Lead (Sn/Pb)		e0
PF08123B	Renesas Electronics	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		85 Cel		-25 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ		880 MHz	915 MHz
PF0075A	Renesas Electronics	NARROW BAND MEDIUM POWER
UPG101P	Renesas Electronics	WIDE BAND LOW POWER				GAAS				143 mA		8,-5	DIE OR CHIP		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPC1678G	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				60 mA		5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-45 Cel	Tin/Lead (Sn/Pb)		e0
UPC2714T-E3	Renesas Electronics	WIDE BAND LOW POWER						-5 dBm			COMPONENT					85 Cel	8.5 dB	-40 Cel		HIGH RELIABILITY			1800 MHz
MC-7891	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			75 ohm		100 Cel	18 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	1000 MHz
UPC3240TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		17 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel
MC-7726	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			75 ohm		85 Cel	21.5 dB	-30 Cel				50 MHz	770 MHz
PF08109B	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	16	CERAMIC		2					3.5	LCC16(UNSPEC)		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
HA21008(5V)TR	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT
UPC3221GV-E1	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel		HIGH RELIABILITY		10 MHz	100 MHz
UPC8233TK-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		4.8 mA	COMPONENT	2.7	FL6,.047,20		RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel				1500 MHz	2400 MHz
MC-7716	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			75 ohm		85 Cel	21.5 dB	-30 Cel				50 MHz	770 MHz
F0109NBTI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz
MC-7831	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	18 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	870 MHz
UPC2771TB-A	Renesas Electronics	WIDE BAND LOW POWER						13 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	800 MHz	1900 MHz
UPC8232T5N-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.1 mA		3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC2712TB-A	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel	MATTE TIN/TIN BISMUTH	HIGH RELIABILITY	e3/e6		2600 MHz
UPC3226TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT					85 Cel	22 dB	-40 Cel
UPC1678B	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	BIPOLAR				60 mA		5	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
PF0147	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPG102B-2	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE MT,.56X.19		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPC1658G-E1	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				18 mA		10	SOP8,.25		RF/Microwave Amplifiers	70 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
F1420NLGK	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	18 dBm	2	120 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	16.4 dB	-40 Cel	TIN	HIGH RELIABILITY	e3	700 MHz	1100 MHz
PF0148	Renesas Electronics	NARROW BAND HIGH POWER
MC-5963-E1	Renesas Electronics	WIDE BAND MEDIUM POWER						8 dBm	3		COMPONENT			50 ohm		90 Cel		-30 Cel				824 MHz	849 MHz
UPC2712T	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		15 mA	COMPONENT	5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2600 MHz
MC-7883	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	22 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	40 MHz	870 MHz
UPD5756T6N-E2-A	Renesas Electronics	WIDE BAND LOW POWER
UPC1658G	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				18 mA		10	SOP8,.25		RF/Microwave Amplifiers	70 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC8152TA	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
MC-5809L	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
UPC8178TB	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel		HIGH RELIABILITY		100 MHz	2400 MHz
UPC3227TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			6 mA	COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	30 dB	-40 Cel
UPD5702TU-E2-A	Renesas Electronics	NARROW BAND MEDIUM POWER						6 dBm			COMPONENT					85 Cel	20 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPC8128TB	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	10 dB	-40 Cel		HIGH RELIABILITY		100 MHz	1900 MHz
PF0340A	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
PF0150	Renesas Electronics	NARROW BAND MEDIUM POWER						13 dBm	3		MODULE			50 ohm		100 Cel		-30 Cel				890 MHz	915 MHz
UPG105B-1	Renesas Electronics		SURFACE MOUNT	16	CERAMIC	GAAS						+-5	QFL16,.25SQ		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
PF0351	Renesas Electronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						7.2	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.