Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
COAXIAL |
85 Cel |
13 dB |
-20 Cel |
869 MHz |
894 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
13 dB |
-20 Cel |
215 MHz |
235 MHz |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
2 |
2 |
COMPONENT |
2.8 |
TSSOP10,.19,20 |
RF/Microwave Amplifiers |
16 dB |
IT CAN ALSO OPERATE AT 1800 TO 2000 MHZ |
900 MHz |
1000 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
50 ohm |
85 Cel |
15 dB |
-20 Cel |
155 MHz |
175 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
14.1 dB |
-20 Cel |
800 MHz |
880 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
2 |
MODULE |
18,28 |
FLANGE MT,2.3X0.8 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
30 dB |
-35 Cel |
1625 MHz |
1665 MHz |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.7 dB |
-30 Cel |
IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ |
100 MHz |
2500 MHz |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3.4 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
100 MHz |
2500 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
13.9 dB |
-20 Cel |
400 MHz |
500 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
85 Cel |
12 dB |
-20 Cel |
890 MHz |
930 MHz |
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|
STMicroelectronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
8 dBm |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
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STMicroelectronics |
NARROW BAND MEDIUM POWER |
30 |
COAXIAL |
85 Cel |
17 dB |
-20 Cel |
300 MHz |
600 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
40 dBm |
3 |
MODULE |
16.2 dB |
1.6 MHz |
54 MHz |
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STMicroelectronics |
NARROW BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
85 Cel |
13 dB |
-20 Cel |
925 MHz |
960 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
MODULE |
85 Cel |
13 dB |
-20 Cel |
TIN LEAD |
e0 |
869 MHz |
894 MHz |
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STMicroelectronics |
PLASTIC/EPOXY |
BIPOLAR |
425 mA |
20 |
FLNG,2.21"H.SPACE |
RF/Microwave Amplifiers |
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|
STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
2.7 |
SOP8,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
40 MHz |
1000 MHz |
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STMicroelectronics |
WIDE BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
18 dB |
-20 Cel |
340 MHz |
520 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
BIPOLAR |
14.77 dBm |
1.5 |
425 mA |
20 |
FLNG,2.21"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
60 Cel |
21 dB |
-20 Cel |
325 MHz |
351 MHz |
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|
STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
20 |
1300 mA |
COMPONENT |
8 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-20 Cel |
155 MHz |
175 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
4.77 dBm |
2 |
COMPONENT |
8,12.5 |
FLNG,2.26"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
42 dB |
-30 Cel |
890 MHz |
915 MHz |
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STMicroelectronics |
PLASTIC/EPOXY |
HYBRID |
12.5 |
MOT CASE 301G-03 |
RF/Microwave Amplifiers |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
2.75 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.5 dB |
-40 Cel |
900 MHz |
1900 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
MODULE |
85 Cel |
12.5 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
869 MHz |
894 MHz |
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|
STMicroelectronics |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3.3 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
14.9 dB |
-20 Cel |
486 MHz |
526 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
COAXIAL |
85 Cel |
11 dB |
-20 Cel |
815 MHz |
915 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
14.7 dB |
-20 Cel |
400 MHz |
470 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
12.2 dB |
-20 Cel |
SMA |
400 MHz |
470 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
MODULE |
85 Cel |
12 dB |
-20 Cel |
925 MHz |
960 MHz |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.9 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
100 MHz |
2500 MHz |
|||||||||||
STMicroelectronics |
PLASTIC/EPOXY |
26 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
2.7 |
FL6,.047,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
LOW NOISE |
e4 |
||||||||||
|
STMicroelectronics |
WIDE BAND HIGH POWER |
COAXIAL |
85 Cel |
-20 Cel |
380 MHz |
512 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
4.77 dBm |
2 |
MODULE |
8,12.5 |
FLNG,2.26"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
890 MHz |
915 MHz |
|||||||||||||
|
STMicroelectronics |
NARROW BAND HIGH POWER |
10 dBm |
COAXIAL |
50 ohm |
85 Cel |
-20 Cel |
SMA |
135 MHz |
175 MHz |
|||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-20 Cel |
135 MHz |
175 MHz |
||||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
14 dBm |
2 |
COMPONENT |
26 |
FLNG,1.6"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-10 Cel |
915 MHz |
960 MHz |
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|
STMicroelectronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
17 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
1000 MHz |
2000 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
10 |
MODULE |
85 Cel |
12.5 dB |
-20 Cel |
925 MHz |
960 MHz |
|||||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
MODULE |
915 MHz |
960 MHz |
|||||||||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
7.9 dB |
-20 Cel |
800 MHz |
830 MHz |
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STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.3 mA |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.7 dB |
-30 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ |
e0 |
100 MHz |
2500 MHz |
|||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
9.5 dB |
-20 Cel |
860 MHz |
960 MHz |
|||||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
43 dBm |
20 |
COMPONENT |
15.5 dB |
486 MHz |
526 MHz |
||||||||||||||||||||
STMicroelectronics |
NARROW BAND HIGH POWER |
20 |
COAXIAL |
85 Cel |
11.7 dB |
-20 Cel |
380 MHz |
512 MHz |
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STMicroelectronics |
NARROW BAND HIGH POWER |
MODULE |
824 MHz |
849 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.