RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC640LP5ETR	Analog Devices		SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			325 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC750LP4E	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	44 dB	-40 Cel	MATTE TIN		e3
AD8350AR15-REEL	Analog Devices	WIDE BAND MEDIUM POWER						8 dBm			COMPONENT			200 ohm		85 Cel	14 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0		1000 MHz
HMC506LP4	Analog Devices	NARROW BAND LOW POWER							2		COMPONENT			50 ohm		85 Cel		-40 Cel	TIN LEAD	LOW NOISE	e0	7800 MHz	8700 MHz
HMC590	Analog Devices	WIDE BAND MEDIUM POWER				GAAS	1	12 dBm			COMPONENT	7	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-55 Cel				6000 MHz	10000 MHz
HMC8121-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC866LC3TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	CERAMIC		1				COMPONENT	3.3	LCC16,.12SQ,20	50 ohm		85 Cel	29 dB	-40 Cel					26500 MHz
HMC389LP4TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm		85 Cel		-40 Cel				3350 MHz	3550 MHz
HMC139	Analog Devices					GAAS				600 mA		14	DIE OR CHIP		RF/Microwave Amplifiers
HMC816LP4E	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	15 dB	-40 Cel	Matte Tin (Sn)		e3	230 MHz	660 MHz
HMC476SC70E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		42 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC626ALP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	10.5 dBm		225 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm		85 Cel	30 dB	-40 Cel	MATTE TIN		e3	0 MHz	10000 MHz
HMC313ERTR	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1					5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC633LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC481MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		85 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
HMC549MS8GE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	0 dBm			COMPONENT	5	TSOP8,.3,38	75 ohm	RF/Microwave Amplifiers	85 Cel	2 dB	-40 Cel	MATTE TIN		e3	40 MHz	960 MHz
HMC580ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		110 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	MATTE TIN		e3	0 MHz	1000 MHz
HMC617LP3E	Analog Devices	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	MATTE TIN	SMA	e3	550 MHz	1200 MHz
HMC633	Analog Devices	WIDE BAND MEDIUM POWER				GAAS	1	5 dBm			COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-55 Cel				5000 MHz	17000 MHz
HMC476MP86ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC817LP4ERTR	Analog Devices		SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	2			124 mA		3/5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC311SC70RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm		85 Cel	11 dB	-40 Cel				0 MHz	8000 MHz
HMC972LP5E	Analog Devices	WIDE BAND LOW POWER						12 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	Matte Tin (Sn)		e3	500 MHz	6000 MHz
HMC342LC4RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	0 dBm			COMPONENT	3	LCC24,.16SQ,20	50 ohm		85 Cel	16 dB	-40 Cel				13000 MHz	25000 MHz
HMC481ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC871LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1					5/8	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	GOLD OVER NICKEL		e4
HMC754S8GE	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			75 ohm		85 Cel	12.1 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	1000 MHz
HMC407MS8GETR	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	10 dB	-40 Cel	MATTE TIN		e3	5000 MHz	7000 MHz
HMC395	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	15 dB	-55 Cel	Gold (Au)		e4	0 MHz	4000 MHz
HMC475ST89	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	4500 MHz
HMC668LP3RTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			70 mA		3/5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC459	Analog Devices	WIDE BAND LOW POWER						16 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-55 Cel				0 MHz	18000 MHz
HMC618LP3	Analog Devices	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	1200 MHz	2200 MHz
HMC930A	Analog Devices	WIDE BAND MEDIUM POWER						22 dBm	7		COMPONENT			50 ohm		85 Cel	10 dB	-55 Cel				0 MHz	40000 MHz
HMC599ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1			140 mA		5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC619LP5ERTR	Analog Devices		SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					12	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC308	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		50 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	800 MHz	3800 MHz
HMC8412CHIPS	Analog Devices	WIDE BAND LOW POWER
AD8350AR15-REEL7	Analog Devices	WIDE BAND MEDIUM POWER						8 dBm			COMPONENT			200 ohm		85 Cel	14 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0		1000 MHz
HMC599ST89E	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			75 ohm		85 Cel	12 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	50 MHz	960 MHz
HMC1022ACHIPS	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm		85 Cel	11.5 dB	-55 Cel				0 MHz	48000 MHz
HMC797	Analog Devices	WIDE BAND MEDIUM POWER				GAAS	1	23 dBm	7		COMPONENT	10	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-55 Cel	GOLD		e4	0 MHz	22000 MHz
HMC590LP5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	12 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm		85 Cel	18 dB	-55 Cel				6000 MHz	9500 MHz
HMC566	Analog Devices	WIDE BAND LOW POWER				GAAS	1	5 dBm			COMPONENT	3	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-55 Cel	GOLD	LOW NOISE	e4	29000 MHz	36000 MHz
HMC474MP86TR	Analog Devices	WIDE BAND LOW POWER
HMC770LP4BETR	Analog Devices	WIDE BAND MEDIUM POWER
HMC469MS8GTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					8	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC504LC4B	Analog Devices	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		85 Cel	14 dB	-55 Cel	GOLD OVER NICKEL		e4	14000 MHz	27000 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.