Analog Devices - HMC590

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

Broadcom's ABA-31563-BLKG is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 3500 MHz. It has a max input power of 15 dBm and VSWR of 1.5, suitable for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;

SGA-3363-TR1 by Rf Micro Devices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 3600 MHz. It has a max input power of 5 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.

XTRF1208RPVR by Texas Instruments is a wide band low power RF amplifier with 16 dB gain. Operating from 10 MHz to 11 GHz, it features BICMOS technology and a characteristic impedance of 50 ohm. Ideal for applications requiring surface mount components in the RF & Microwave domain.

Broadcom's MGA-82563-TR1G is a GAAS RF amplifier with 8.8dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates b/w -40°C to 85°C.

Analog Devices' HMC374SC70E is a GAAS RF amplifier with 15dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 3.3V supply. This wideband medium-power device is ideal for RF and microwave applications requiring surface mount components.

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;

Wolfspeed's CMPA2560025F is a wide band high power RF amplifier module with 19.5 dB gain, operating from 2500 to 6000 MHz. It has a max VSWR of 5 and features a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in the RF & Microwave domain.

Analog Devices' HMC414MS8GETR is a RF amplifier with 17 dB gain, operating from 2200-2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

HMC634LC4TR by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5V supply. It has a frequency range of 5-20 GHz, ideal for RF and microwave applications. With ceramic packaging and surface mounting feature, it offers high performance in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

TGA2238-CP by Qorvo is a GAN technology RF amplifier with 28 dB gain, operating from 8-11 GHz. It has a max input power of 30 dBm and VSWR of 3, suitable for wideband high-power applications. This module operates b/w -40 to 85°C, drawing a max current of 650 mA at -2.6 to 28V supplies.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.