Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
GAAS |
5 |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
|||||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
7 |
24 dBm |
1 |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
6000 MHz |
26500 MHz |
||||||||||
Analog Devices |
TRIPLE BALANCED |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
14 dB |
15000 MHz |
36000 MHz |
|||||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
LCC16,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
13 dB |
6000 MHz |
20000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
||||||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16X.2,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
15 dBm |
112 mA |
COMPONENT |
3.3/5 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
8000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
14 dB |
2250 MHz |
18000 MHz |
|||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
GOLD OVER NICKEL |
e4 |
||||||||||||||||||||
|
Analog Devices |
GAAS |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
||||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
COMPONENT |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
12 dB |
1000 MHz |
2000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.