Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
9 dB |
4000 MHz |
8000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
15 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
12 dB |
e4 |
5000 MHz |
20000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
4000 MHz |
8000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
38535V;34K;Cls S |
20 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
14 dB |
6000 MHz |
18000 MHz |
||||||||||||
|
Analog Devices |
GAAS |
5 |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
|||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
15 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
9 dB |
4000 MHz |
8000 MHz |
|||||||
Analog Devices |
IMAGE REJECTION |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
12 dB |
20000 MHz |
42000 MHz |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
13.5 dB |
24000 MHz |
34000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
13 dB |
HIGH RELIABILITY |
e4 |
7000 MHz |
14000 MHz |
|||||||||||
|
Analog Devices |
GAAS |
5 |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
|||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
9 dB |
e4 |
6000 MHz |
11000 MHz |
||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
1600 MHz |
2700 MHz |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
1600 MHz |
2700 MHz |
|||||||||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
20 dBm |
450 mA |
COMPONENT |
3.3 |
LCC32,.2SQ,20 |
200 ohm |
105 Cel |
-40 Cel |
1500 MHz |
7000 MHz |
|||||||||
|
Analog Devices |
GAAS |
5 |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
|||||||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
21 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
14 dB |
7000 MHz |
34000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16X.2,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
CMOS |
20 dBm |
1.92 |
450 mA |
COMPONENT |
3.3 |
LCC32,.2SQ,20 |
200 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
1500 MHz |
7000 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
GOLD OVER NICKEL |
e4 |
||||||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
||||||||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
||||||||||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
40 |
GAAS |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-55 Cel |
81000 MHz |
86000 MHz |
||||||||||||
Analog Devices |
IMAGE REJECTION |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
12 dB |
20000 MHz |
42000 MHz |
|||||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
15.5 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
13 dB |
e4 |
26000 MHz |
32000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
1700 MHz |
4500 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
9 dB |
4000 MHz |
8000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2300 MHz |
4000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
13.5 dB |
24000 MHz |
34000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
600 MHz |
1300 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
9 dB |
4000 MHz |
8000 MHz |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
14 dB |
15000 MHz |
33500 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
14 dB |
2250 MHz |
18000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
CMOS |
20 dBm |
1.92 |
450 mA |
COMPONENT |
3.3 |
LCC32,.2SQ,20 |
300 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
300 MHz |
6000 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
5 |
LCC32,.2SQ,20 |
RF/Microwave Up/Down Converters |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
21 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
13 dB |
7000 MHz |
43000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
600 MHz |
1300 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
15 dBm |
105 mA |
COMPONENT |
3.3 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
300 MHz |
4000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
15 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
9 dB |
e4 |
4000 MHz |
8000 MHz |
||||||
Analog Devices |
IMAGE REJECTION |
-88 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
2500 MHz |
8500 MHz |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
21 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
13 dB |
6000 MHz |
26000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
210 mA |
3 |
DIE OR CHIP |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
|||||||||||||||
|
Analog Devices |
GAAS |
DIE OR CHIP |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
||||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
15 dBm |
105 mA |
COMPONENT |
3.3 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
300 MHz |
4000 MHz |
||||||
|
Analog Devices |
IMAGE REJECTION |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
71000 MHz |
86000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
10 dB |
e4 |
1800 MHz |
5000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.