Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
75 mA |
COMPONENT |
5 |
TSSOP14,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
0 MHz |
2500 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
5500 MHz |
14000 MHz |
||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
185 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
3100 MHz |
3900 MHz |
||||||||||||
|
Analog Devices |
TRIPLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
195 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
5500 MHz |
14000 MHz |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
COMPONENT |
3.3/5 |
LCC20,.20SQ,25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
8.5 dB |
HIGH ISOLATION |
e3 |
500 MHz |
1700 MHz |
||||
Analog Devices |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
500 MHz |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
MODULE |
+-5 |
LDCC20,.4SQ |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
75 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
|||||||||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
11 dB |
e0 |
9000 MHz |
15000 MHz |
|||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
11 dB |
e0 |
600 MHz |
1300 MHz |
||||||
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
140 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
13.5 dB |
24000 MHz |
32000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
75 mA |
COMPONENT |
5 |
TSSOP14,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
2500 MHz |
|||||
|
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
1700 MHz |
2200 MHz |
||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
13 dB |
e4 |
15000 MHz |
23000 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
200 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11.5 dB |
e4 |
15000 MHz |
23600 MHz |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
11000 MHz |
16000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
1500 MHz |
3800 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
COMPONENT |
3.3/5 |
LCC20,.20SQ,25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
HIGH ISOLATION |
e3 |
500 MHz |
1700 MHz |
|||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
220 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
13 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
11.5 dB |
e4 |
25000 MHz |
40000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
700 MHz |
1400 MHz |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
700 MHz |
1200 MHz |
||||||
Analog Devices |
SINGLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
11 dB |
e0 |
3000 MHz |
3800 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
11 dB |
4000 MHz |
8500 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
13 dBm |
50 mA |
COMPONENT |
3/4 |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
13 dB |
e4 |
17000 MHz |
25000 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
10 dB |
e4 |
8500 MHz |
13500 MHz |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
5 |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
220 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
1800 MHz |
3900 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
19000 MHz |
33000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
110 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
195 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
15 dB |
26000 MHz |
33000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
7 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
||||||||||
|
Analog Devices |
SURFACE MOUNT |
40 |
PLASTIC/EPOXY |
BICMOS |
5 |
LCC40,.24SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
9000 MHz |
15000 MHz |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
125 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
23 dBm |
110 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
MATTE TIN |
13 dB |
e3 |
500 MHz |
2700 MHz |
||||
|
Analog Devices |
DOUBLE BALANCED |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
9 dB |
e4 |
3000 MHz |
7000 MHz |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
e4 |
11000 MHz |
16000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
4000 MHz |
8500 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.