Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Compression Point (1 dB) | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Minimum Isolation | Maximum Insertion Loss | Additional Features | Nominal On Time | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency | Port Termination |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
CMOS |
1 |
23.01 dBm |
21 dBm |
COMPONENT |
2.8 |
FL6,.047,20 |
RF/Microwave Switches |
85 Cel |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
20 dB |
1.2 dB |
e6 |
50 MHz |
2500 MHz |
||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
25.91 dBm |
29 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
TIN LEAD |
30 dB |
1.1 dB |
CMOS COMPATIBLE |
.005 us |
e0 |
0 MHz |
3500 MHz |
ABSORPTIVE |
|||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
25.91 dBm |
29 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
30 dB |
1.1 dB |
CMOS COMPATIBLE |
.005 us |
e3 |
0 MHz |
3500 MHz |
ABSORPTIVE |
||||||
|
M/a-com Technology Solutions |
SPDT |
33.01 dBm |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
2.5 dB |
HIGH RELIABILITY, HIGH ISOLATION |
e3 |
0 MHz |
20000 MHz |
|||||||||||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
30 dBm |
31 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
42 dB |
2.1 dB |
HIGH ISOLATION |
.12 us |
e3 |
0 MHz |
4000 MHz |
||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
31 dBm |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
42 dB |
2.1 dB |
.12 us |
e3 |
4000 MHz |
|||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
30 dBm |
23 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
33 dB |
2.5 dB |
HIGH ISOLATION |
.006 us |
e3 |
0 MHz |
20000 MHz |
|||||||
Psemi |
SPDT |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
CMOS |
1 |
25 dBm |
1.22 |
.2 mA |
COMPONENT |
3 |
LCC20,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
44 dB |
1.9 dB |
HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=0.63W |
.3 us |
20 MHz |
6000 MHz |
ABSORPTIVE |
|||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
6 |
AEC-Q100 |
2 |
1.75 |
.06 mA |
COMPONENT |
1.8 |
50 ohm |
105 Cel |
-40 Cel |
14.5 dB |
1.1 dB |
HIGH ISOLATION, I/P POWER-MAX(PEAK)=2W |
617 MHz |
8000 MHz |
REFLECTIVE |
||||||||||
Mini-circuits |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
1.94 |
27 dBm |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Switches |
100 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
25 dB |
2.6 dB |
e0 |
0 MHz |
4600 MHz |
ABSORPTIVE |
|||||||
|
Mini-circuits |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
1.94 |
27 dBm |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Switches |
100 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
25 dB |
2.6 dB |
e4 |
0 MHz |
4600 MHz |
ABSORPTIVE |
||||||
|
Psemi |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
1 |
36 dBm |
1.15 |
.2 mA |
COMPONENT |
3.3/3.4 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
13 dB |
2.7 dB |
HIGH LINEARITY AND ISOLATION |
5.5 us |
e4 |
.009 MHz |
13000 MHz |
ABSORPTIVE |
|||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
21 dBm |
1.15 |
.6 mA |
28 dBm |
COMPONENT |
-2.5,3.3/5 |
LGA20,7X7,16 |
50 ohm |
85 Cel |
-40 Cel |
1.1 us |
.009 MHz |
30000 MHz |
ABSORPTIVE |
||||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
6 |
AEC-Q100 |
2 |
1.75 |
.06 mA |
COMPONENT |
1.8 |
50 ohm |
105 Cel |
-40 Cel |
14.5 dB |
1.1 dB |
HIGH ISOLATION, I/P POWER-MAX(PEAK)=2W |
617 MHz |
8000 MHz |
REFLECTIVE |
||||||||||
|
M/a-com Technology Solutions |
SPDT |
1 |
32.79 dBm |
COMPONENT |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-65 Cel |
20 dB |
1.2 dB |
HIGH ISOLATION |
50 MHz |
20000 MHz |
|||||||||||||||
|
TE Connectivity |
SPDT |
1 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-65 Cel |
34 dB |
1.2 dB |
20000 MHz |
|||||||||||||||||||
|
M/a-com Technology Solutions |
SPDT |
33.98 dBm |
1.9 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
1.45 dB |
e3 |
0 MHz |
3000 MHz |
||||||||||||||||
New Japan Radio |
SPDT |
37 dBm |
1.4 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN BISMUTH |
.65 dB |
HIGH ISOLATION |
e6 |
0 MHz |
6000 MHz |
||||||||||||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
31 dBm |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
55 dB |
1.7 dB |
HIGH ISOLATION |
.12 us |
e3 |
0 MHz |
4000 MHz |
ABSORPTIVE |
||||
Murata Manufacturing |
SPDT |
||||||||||||||||||||||||||||
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
20 |
2 |
27 dBm |
1.22 |
.17 mA |
COMPONENT |
3.3 |
LCC20,.16SQ,20 |
50 ohm |
110 Cel |
-40 Cel |
TIN |
46 dB |
1.65 dB |
HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W |
.155 us |
e3 |
50 MHz |
6000 MHz |
ABSORPTIVE |
||||||
Psemi |
SPDT |
||||||||||||||||||||||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
32 |
1 |
47 dBm |
COMPONENT |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
.05 us |
500 MHz |
6000 MHz |
REFLECTIVE |
||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
21 dBm |
1.15 |
.6 mA |
28 dBm |
COMPONENT |
-2.5,3.3/5 |
LGA20,7X7,16 |
50 ohm |
85 Cel |
-40 Cel |
1.1 us |
.009 MHz |
30000 MHz |
ABSORPTIVE |
||||||||||
L-3 Narda-miteq |
SPDT |
||||||||||||||||||||||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
30 dBm |
23 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn85Pb15) |
33 dB |
2.5 dB |
HIGH ISOLATION |
.006 us |
e0 |
0 MHz |
20000 MHz |
||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
LCC16,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
33 dB |
2.5 dB |
.006 us |
20000 MHz |
||||||||||||||
|
Mini-circuits |
SPDT |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
CMOS |
1 |
30 dBm |
1.22 |
.2 mA |
35 dBm |
COMPONENT |
3 |
50 ohm |
105 Cel |
-40 Cel |
44 dB |
1.9 dB |
100 MHz |
6000 MHz |
ABSORPTIVE |
||||||||
|
TE Connectivity |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
51 dB |
.7 dB |
.015 us |
3000 MHz |
|||||||||||||
TE Connectivity |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
42.04 dBm |
1.2 |
33 dBm |
COMPONENT |
5 |
SOP8,.25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
27 dB |
.65 dB |
HIGH RELIABILITY |
.035 us |
0 MHz |
2000 MHz |
|||||||
TE Connectivity |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
35.8 dBm |
5/8 |
SOP8,.25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
14 dB |
.8 dB |
.035 us |
2500 MHz |
REFLECTIVE |
||||||||||||
TE Connectivity |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
33 dBm |
5/8 |
SOP8,.25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
14 dB |
.8 dB |
35 us |
2500 MHz |
REFLECTIVE |
||||||||||||
|
Psemi |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
CMOS |
1 |
35 dBm |
1.11 |
.035 mA |
32 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
26.5 dB |
.65 dB |
HIGH ISOLATION |
.2 us |
e3 |
0 MHz |
3000 MHz |
REFLECTIVE |
|||
|
Analog Devices |
SPDT |
|||||||||||||||||||||||||||
|
Renesas Electronics |
SPDT |
Tin (Sn) |
e3 |
|||||||||||||||||||||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
26.02 dBm |
24 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
30 dB |
1.1 dB |
CMOS/TTL COMPATIBLE |
e3 |
0 MHz |
3500 MHz |
|||||||
|
Psemi |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
1 |
36 dBm |
1.15 |
.2 mA |
COMPONENT |
3.3/3.4 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
13 dB |
2.7 dB |
HIGH LINEARITY AND ISOLATION |
5.5 us |
e4 |
.009 MHz |
13000 MHz |
ABSORPTIVE |
||||
|
Qorvo |
SPDT |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
2.5 dB |
HIGH ISOLATION |
0 MHz |
28000 MHz |
||||||||||||||||||
|
Analog Devices |
SPDT |
23.98 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
2.4 dB |
e3 |
0 MHz |
8000 MHz |
|||||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
33.98 dBm |
COMPONENT |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
20 dB |
.7 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
3000 MHz |
REFLECTIVE |
|||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
33.98 dBm |
COMPONENT |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
20 dB |
.7 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
3000 MHz |
REFLECTIVE |
|||||||
|
TE Connectivity |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
38 dBm |
2.7 |
TSSOP6,.08 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
23 dB |
.65 dB |
.1 us |
3000 MHz |
||||||||||||
|
Psemi |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
CMOS |
1 |
29 dBm |
1.2 |
.3 mA |
40 dBm |
COMPONENT |
3.3 |
SOLCC6,.06,20 |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
24 dB |
1.6 dB |
HIGH LINEARITY, I/P POWER-MAX(PULSE)=7.94W |
.145 us |
100 MHz |
8500 MHz |
REFLECTIVE |
||||
|
Skyworks Solutions |
SPDT |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
.8 dB |
HIGH ISOLATION |
100 MHz |
6000 MHz |
|||||||||||||||||||
|
Skyworks Solutions |
SPDT |
|||||||||||||||||||||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
22 |
CERAMIC |
1 |
41 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
.031 us |
e4 |
500 MHz |
18000 MHz |
REFLECTIVE |
||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
27 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
37 dB |
3.1 dB |
.006 us |
e3 |
0 MHz |
12000 MHz |
|||||||
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
30.97 dBm |
31 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
30 dB |
1.8 dB |
HIGH ISOLATION |
e0 |
0 MHz |
4000 MHz |
RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.
There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.
RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.