SPDT RF/Microwave Switches 405

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
HMC545	Analog Devices	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	33.98 dBm				COMPONENT		TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	.7 dB	CMOS COMPATIBLE		e0	0 MHz	3000 MHz	REFLECTIVE
HMC233G8	Analog Devices	SPDT							30 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		2.2 dB			e4	0 MHz	6000 MHz
HMC232C8	Analog Devices	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS		1	30 dBm			26 dBm	COMPONENT	-5	SOP8,.3	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	37 dB	2.8 dB		.005 us	e4	0 MHz	8000 MHz	ABSORPTIVE
HMC276LP4	Analog Devices	SPDT							23.01 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		7 dB			e0	200 MHz	3000 MHz
HMC336MS8G	Analog Devices	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	27.99 dBm			25 dBm	COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	37 dB	2 dB		.02 us	e0	0 MHz	6000 MHz	ABSORPTIVE
HMC270MS8GTR	Analog Devices	SPDT							23.98 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		2.4 dB			e0	0 MHz	8000 MHz
HMC8800	Analog Devices	SPDT	SURFACE MOUNT	10			38535V;38534K;883S	1	30 dBm				COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-55 Cel		40 dB	2.9 dB				0 MHz	15000 MHz
ADRF5032	Analog Devices	SPDT
ADRF5144	Analog Devices	SPDT
ADRF5301	Analog Devices	SPDT
ADRF5032BCCZN	Analog Devices	SPDT
ADRF5032BCCZN-R7	Analog Devices	SPDT
SPM3202	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		15 dBm			TSSOP6,.08		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us
SPM3227	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		15 dBm			SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.6 dB					2500 MHz
SPM3315	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		29 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		17 dB	.5 dB					2500 MHz
NSVG1001MXT1G	Onsemi	SPDT	SURFACE MOUNT	6			AEC-Q100	1				27 dBm	COMPONENT		SOLCC6,.04,14			105 Cel	-40 Cel		20 dB	.95 dB		.1 us
SPM3221	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		27 dBm		3	FL6,.07,25		RF/Microwave Switches	85 Cel	-40 Cel		27 dB	.4 dB		.05 us			2500 MHz
SPM3225	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		31 dBm		1.8/3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.6 dB		.02 us			2500 MHz
SPM3314	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		29 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		17 dB	.5 dB					2500 MHz
SPM3252	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		2					TSOP6,.11,37		RF/Microwave Switches	70 Cel	-20 Cel		20 dB	.95 dB		.02 us			1900 MHz
SPM3226	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5					SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		15 dB	.55 dB		.02 us
SPM3501	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.7		20 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		10 dB	1.3 dB		.1 us			6000 MHz
SPM3205	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		15 dBm			TSOP6,.11,37		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us			1033 MHz
SPM3224	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5				2.8	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		15 dB	.55 dB		.02 us			2500 MHz
SPM3215	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.6		26 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-20 Cel		10 dB	1.4 dB					2500 MHz
SPM3313	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		30 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.55 dB					2500 MHz
SPM3255	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		2		20 dBm		3	TSOP6,.11,37		RF/Microwave Switches	70 Cel	-20 Cel		20 dB	.9 dB		.02 us			1900 MHz
BGS12ATRE6327	Infineon Technologies	SPDT							23.98 dBm				COMPONENT			50 ohm		85 Cel	-30 Cel			.8 dB	CMOS COMPATIBLE			100 MHz	3000 MHz
BGS12PL6	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	36 dBm	1.04	.35 mA		COMPONENT	2.5/3.3	SOLCC6,.03,16	50 ohm		85 Cel	-40 Cel	Gold (Au)	19 dB	1.15 dB	CMOS/TTL COMPATIBLE, HIGH ISOLATION, HIGH LINEARITY	1.4 us	e4	30 MHz	4000 MHz
BGS12WN6E6329	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	26 dBm	1	.12 mA		COMPONENT	1.8/3.3	LCC6,.03X.04,16	50 ohm		85 Cel	-40 Cel		16 dB	2 dB	CMOS/TTL COMPATIBLE	.22 us		50 MHz	9000 MHz
BGS12AE6327X1SA1	Infineon Technologies	SPDT							23.98 dBm				COMPONENT			50 ohm		85 Cel	-30 Cel			.8 dB	CMOS COMPATIBLE			100 MHz	3000 MHz
CSY10	Infineon Technologies	SPDT							21.99 dBm				COMPONENT			50 ohm						1.2 dB
BGS12A	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	23.98 dBm				COMPONENT	2.8	BGA6,2X3,8	50 ohm	RF/Microwave Switches	85 Cel	-30 Cel	Matte Tin (Sn)	20 dB	.8 dB	CMOS COMPATIBLE		e3	100 MHz	3000 MHz
BGS12P2L6	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	38 dBm	1	.11 mA		COMPONENT	1.8	SOLCC6,.03,16	50 ohm		85 Cel	-40 Cel		24 dB	.74 dB		.7 us		50 MHz	6000 MHz
BGS12WN6E6327	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	26 dBm	1	.12 mA		COMPONENT	1.8/3.3	LCC6,.03X.04,16	50 ohm		85 Cel	-40 Cel		16 dB	2 dB	CMOS/TTL COMPATIBLE	.22 us		50 MHz	9000 MHz
TG2200F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	2 dB				1895 MHz	1918 MHz
TG2200AF	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB		.1 us		1895 MHz	1918 MHz	ABSORPTIVE
TG2203F	Toshiba	SPDT
TG2216TU	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	30 dBm			28 dBm	COMPONENT	2.7	FL6,.07,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB				1000 MHz	2500 MHz
TG2204F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0	1895 MHz	1918 MHz	ABSORPTIVE
TG2205F	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE
TG2205F(TE85L)	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1				24 dBm		3	TSOP6,.11,37		RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE
UPG132G-E1	Renesas Electronics	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1				30 dBm		3/5	SSOP8,.2		RF/Microwave Switches			Tin/Lead (Sn/Pb)		1 dB		.03 us	e0		2500 MHz	REFLECTIVE
F2912NCGI	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1		1.09	.153 mA	30 dBm	COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		125 Cel	-55 Cel	TIN	23 dB	1.4 dB		1.1 us	e3	.009 MHz	9000 MHz	ABSORPTIVE
UPG107B	Renesas Electronics	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS		1						-5	FL8,.2		RF/Microwave Switches			Tin/Lead (Sn/Pb)					e0
F2976NEGK8	Renesas Electronics	SPDT	SURFACE MOUNT	12				3	30 dBm	1.08	.15 mA		COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	-40 Cel	Tin (Sn)	29 dB	.56 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=3.16W	1.5 us	e3	5 MHz	10000 MHz	REFLECTIVE
F2977NEGK	Renesas Electronics	SPDT	SURFACE MOUNT	12				1	33 dBm	1.08	.15 mA		COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	-40 Cel	TIN	29 dB	.56 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=6.3W	1.5 us	e3	30 MHz	6000 MHz	REFLECTIVE
UPG152TA-E3	Renesas Electronics	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1				27 dBm		3	TSOP6,.11,37		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.03 us	e0		2500 MHz	REFLECTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.