Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Compression Point (1 dB) | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Minimum Isolation | Maximum Insertion Loss | Additional Features | Nominal On Time | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency | Port Termination |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
SPDT |
30 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
2.4 dB |
e4 |
0 MHz |
8000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
10 |
GAAS |
1 |
17 dBm |
1.38 |
24 dBm |
COMPONENT |
-5 |
DIE OR CHIP |
50 ohm |
85 Cel |
-55 Cel |
40 dB |
2.2 dB |
HIGH ISOLATION |
.01 us |
100 MHz |
20000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SPDT |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
3 dB |
e4 |
0 MHz |
28000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
36 dBm |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
15 dB |
1.8 dB |
.024 us |
3000 MHz |
REFLECTIVE |
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Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
3/8 |
SOLCC6,.08,25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10 dB |
1.5 dB |
.102 us |
e0 |
2700 MHz |
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|
Analog Devices |
SPDT |
|||||||||||||||||||||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
4 |
23.01 dBm |
26 dBm |
COMPONENT |
5 |
SSOP24,.24 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
26 dB |
7 dB |
.35 us |
e0 |
700 MHz |
3000 MHz |
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|
Analog Devices |
SPDT |
GAAS |
1 |
30 dBm |
26 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Gold (Au) |
45 dB |
3.4 dB |
HIGH ISOLATION |
.005 us |
e4 |
0 MHz |
15000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
SOLCC6,.08,25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
23 dB |
1.3 dB |
.07 us |
6000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
23 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Matte Tin (Sn) |
33 dB |
2.4 dB |
HIGH ISOLATION |
.006 us |
e3 |
0 MHz |
14000 MHz |
|||||
|
Analog Devices |
SPDT |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
1.1 dB |
CMOS COMPATIBLE, HIGH ISOLATION |
e3 |
0 MHz |
3000 MHz |
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Analog Devices |
SPDT |
||||||||||||||||||||||||||||
Analog Devices |
SPDT |
27.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
2 dB |
HIGH ISOLATION |
0 MHz |
6000 MHz |
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Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
LCC16,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
33 dB |
2.5 dB |
.006 us |
20000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
28 dBm |
1.17 |
COMPONENT |
3.3 |
LCC20,.12SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
I/P POWER-MAX(PEAK)=3.98W |
.055 us |
24000 MHz |
32000 MHz |
REFLECTIVE |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
1 |
30 dBm |
26 dBm |
COMPONENT |
SOP8,.3 |
50 ohm |
85 Cel |
-40 Cel |
37 dB |
2.8 dB |
.005 us |
0 MHz |
8000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
4 |
26 dBm |
5 |
SSOP24,.24 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
26 dB |
7 dB |
.35 us |
3000 MHz |
||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
27 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
37 dB |
3.1 dB |
.006 us |
e3 |
0 MHz |
12000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
14 |
GAAS |
1 |
21 dBm |
1.58 |
COMPONENT |
-3.3,3,3 |
DIE OR CHIP |
50 ohm |
2.2 dB |
CMOS COMPATIBLE, HIGH LINEARITY AND ISOLATION |
.01 us |
100 MHz |
60000 MHz |
REFLECTIVE |
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|
Analog Devices |
SPDT |
|||||||||||||||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
14 |
GAAS |
1 |
21 dBm |
1.58 |
COMPONENT |
-3.3,3,3 |
DIE OR CHIP |
50 ohm |
2.2 dB |
CMOS COMPATIBLE, HIGH LINEARITY AND ISOLATION |
.01 us |
100 MHz |
60000 MHz |
REFLECTIVE |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
41 dBm |
COMPONENT |
5/8 |
TSOP6,.11,37 |
50 ohm |
85 Cel |
-40 Cel |
18 dB |
1 dB |
.09 us |
824 MHz |
894 MHz |
REFLECTIVE |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
10 |
GAAS |
1 |
17 dBm |
1.38 |
24 dBm |
COMPONENT |
-5 |
DIE OR CHIP |
50 ohm |
85 Cel |
-55 Cel |
40 dB |
2.2 dB |
HIGH ISOLATION |
.01 us |
100 MHz |
20000 MHz |
ABSORPTIVE |
|||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
36 dBm |
TSOP6,.11,37 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
8 dB |
1 dB |
.14 us |
4000 MHz |
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Analog Devices |
SPDT |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
2.4 dB |
HIGH ISOLATION |
0 MHz |
14000 MHz |
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|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
36 dBm |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
16 dB |
.8 dB |
.12 us |
e3 |
3000 MHz |
REFLECTIVE |
|||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
28 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
24 dB |
1.1 dB |
.02 us |
e3 |
0 MHz |
3000 MHz |
REFLECTIVE |
|||||||
|
Analog Devices |
SPDT |
GAAS |
1 |
-5 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
6000 MHz |
ABSORPTIVE |
||||||||||||||||||
|
Analog Devices |
SPDT |
|||||||||||||||||||||||||||
|
Analog Devices |
SPDT |
GAAS |
1 |
-5 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
REFLECTIVE |
|||||||||||||||||||
|
Analog Devices |
SPDT |
23.01 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
7 dB |
e3 |
200 MHz |
3000 MHz |
|||||||||||||||||
Analog Devices |
SPDT |
23.98 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
1 dB |
CMOS/TTL COMPATIBLE |
e0 |
0 MHz |
2500 MHz |
|||||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
23 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
28 dB |
2.4 dB |
.05 us |
e3 |
0 MHz |
8000 MHz |
ABSORPTIVE |
||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
SOLCC6,.08,25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
23 dB |
1.3 dB |
.07 us |
6000 MHz |
|||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
LCC16,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
33 dB |
2.5 dB |
.006 us |
20000 MHz |
||||||||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
TSOP6,.11,37 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
20 dB |
.7 dB |
.09 us |
e0 |
3000 MHz |
REFLECTIVE |
|||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
28 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
45 dB |
1 dB |
HIGH ISOLATION |
e3 |
0 MHz |
2500 MHz |
||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
23 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
33 dB |
2.5 dB |
.006 us |
0 MHz |
20000 MHz |
ABSORPTIVE |
||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
1 |
26.99 dBm |
23 dBm |
COMPONENT |
SOP8,.3 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
32 dB |
2.8 dB |
.006 us |
e4 |
0 MHz |
8000 MHz |
ABSORPTIVE |
||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
39.03 dBm |
36 dBm |
COMPONENT |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
8 dB |
1 dB |
.14 us |
e3 |
0 MHz |
4000 MHz |
|||||||
Analog Devices |
SPDT |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
1.1 dB |
CMOS COMPATIBLE, HIGH ISOLATION |
e0 |
0 MHz |
3000 MHz |
|||||||||||||||||
|
Analog Devices |
SPDT |
GAAS |
1 |
30 dBm |
26 dBm |
COMPONENT |
-5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Gold (Au) |
40 dB |
3.4 dB |
HIGH ISOLATION |
.005 us |
e4 |
0 MHz |
15000 MHz |
ABSORPTIVE |
|||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
4 |
26 dBm |
5 |
SSOP24,.24 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
26 dB |
7 dB |
.35 us |
3000 MHz |
|||||||||||||
|
Analog Devices |
SPDT |
27.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
2 dB |
e3 |
0 MHz |
6000 MHz |
|||||||||||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
SOLCC6,.08,25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
12 dB |
1.7 dB |
.32 us |
2025 MHz |
||||||||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
23 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
33 dB |
2.4 dB |
HIGH ISOLATION |
.006 us |
e0 |
0 MHz |
14000 MHz |
||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
36 dBm |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
15 dB |
1.8 dB |
.024 us |
e3 |
3000 MHz |
REFLECTIVE |
|||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
27 dBm |
COMPONENT |
5 |
SOP8,.4 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
29 dB |
2.2 dB |
.006 us |
e4 |
0 MHz |
6000 MHz |
ABSORPTIVE |
RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.
There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.
RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.