SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 34

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

VUB120-16NO2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

e4

UL RECOGNIZED

DDB6U75N16W1RB11BOMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

69 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

630 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

137 ns

DDB6U180N16RR_B37

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

620 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

DDB6U75N16YR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

69 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

670 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

175 ns

DDB6U75N16W1R_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

69 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

630 ns

11

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

137 ns

DDB6U180N16RRPB37BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

24

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DDB6U25N16VRBOMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

620 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

DDB6U75N16W1R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

69 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

630 ns

27

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X27

1

ISOLATED

Not Qualified

260

137 ns

DDB6U180N16RRB37BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DDB6U30N08VRBOMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

26 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

145 ns

9

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

38 ns

DDB6U134N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DDB6U134N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DDB6U134N16RR_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

400 W

125 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

510 ns

19

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL APPROVED

DDB6U134N16RRBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DDB6U75N16W1RBOMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

69 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

630 ns

27

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X27

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

137 ns

DDB6U30N08VR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

83.5 W

26 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

1

145 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

38 ns

DDB6U25N16VR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

620 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

SP000101744

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

500 W

70 A

UNSPECIFIED

POWER CONTROL

2.75 V

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

UL RECOGNIZED

VUB145-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

570 W

141 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

1

11

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

GOLD OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e4

UL RECOGNIZED

VUB135-22NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

113 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1080 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

GOLD OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e4

320 ns

UL RECOGNIZED

VUB160-12NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

VUB160-16NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

VUB120-12NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

VUB120-16NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

VUB120-12NO2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

e4

UL RECOGNIZED

VUB160-16NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

VUB160-12NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

VUB120-16NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

VUB116-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

380 W

95 A

UNSPECIFIED

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

1

11

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

GOLD OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e4

UL RECOGNIZED

VUB120-12NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

VUB71-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

43 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

350 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

300 ns

UL RECOGNIZED

VUB60-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

VUB60-12NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

VUB71-12NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

43 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

350 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

300 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.