105 A Insulated Gate Bipolar Transistors (IGBT) 25

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS75R12KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IRGPS60B120KDP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

105 A

PLASTIC/EPOXY

MOTOR CONTROL

45 ns

THROUGH-HOLE

RECTANGULAR

1

58 ns

411 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

6 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

104 ns

FS75R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IXYN82N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

105 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

295 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

UPPER

R-PUFM-X4

ISOLATED

119 ns

UL RECOGNIZED

FS75R12KE3B9BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

FP75R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

APT60GT60JRDQ3

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

379 W

105 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

320 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

51 ns

FP75R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

SK100GD066T

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

POWER CONTROL

1.85 V

PIN/PEG

RECTANGULAR

6

1131 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-P22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

272 ns

UL RECOGNIZED

FP75R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

350 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FP75R12KT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

355 W

105 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IRGPS60B120KDPPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

104 ns

FS75R12KE3_B9

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

355 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X26

1

ISOLATED

Not Qualified

260

340 ns

BSM75GAL120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

105 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

520 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM75GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

520 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

FS75R12KE3B9BDLA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X26

ISOLATED

340 ns

UL RECOGNIZED

FS75R12KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

350 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FS75R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IRGPS60B120KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

104 ns

MG1275S-BA1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

570 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

MG1275W-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

MG1275H-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

MG1275W-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

105 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

IXYH40N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

105 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

237 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

81 ns

MMIX1X100N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

105 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

350 ns

21

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

DUAL

R-PDSO-G21

ISOLATED

AVALANCHE RATED

92 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.