Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
22 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
100 W |
12 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
77 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
GULL WING |
RECTANGULAR |
1 |
22 ns |
127 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
38 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
17 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
GENERAL PURPOSE |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
22 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
75 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
85 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
GENERAL PURPOSE |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
22 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
17 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
17 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
249 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
17 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
50 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
3.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
320 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
PURE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
75 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268 |
e3 |
10 |
260 |
85 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
GULL WING |
RECTANGULAR |
1 |
700 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
104 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
94 W |
12 A |
Insulated Gate BIP Transistors |
175 Cel |
445 V |
15 V |
2 V |
MATTE TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
291 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
24 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
291 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
24 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
24.2 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
291 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
24 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
291 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
24 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
80 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
220 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e3 |
63 ns |
|||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
220 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
Not Qualified |
63 ns |
||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
800 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST SWITCHING |
TO-220AB |
50 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
800 ns |
200 ns |
3 |
FLANGE MOUNT |
85 W |
150 Cel |
SILICON |
800 V |
30 V |
350 ns |
5.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
50 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
335 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-251 |
NOT SPECIFIED |
NOT SPECIFIED |
22 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
17 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
199 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
30 |
225 |
40 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
325 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
3 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
260 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
17 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
22 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
40 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
325 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
40 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
77 W |
12 A |
22 ns |
22 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
1 |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
100 W |
12 A |
200 ns |
300 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
22 ns |
AEC-Q101 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
100 W |
12 A |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
17 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
335 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-251 |
e3 |
22 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
17 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
565 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
95 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
325 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
40 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
77 W |
12 A |
22 ns |
22 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
1 |
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|
Infineon Technologies |
N-CHANNEL |
YES |
77 W |
12 A |
22 ns |
22 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
1 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
39 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
26 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
56 ns |
220 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
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|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
565 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
95 ns |
UL APPROVED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.