12 A Insulated Gate Bipolar Transistors (IGBT) 97

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGSL4B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

THROUGH-HOLE

RECTANGULAR

1

89 ns

199 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262

e3

40 ns

SKP06N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

68 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

THROUGH-HOLE

RECTANGULAR

1

84 ns

318 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

SGB06N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

SP000960698

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

249 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

17 ns

SGB06N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

67 W

12 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

65 ns

318 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

245

41 ns

SKP06N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

41 ns

SKP06N60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

41 ns

SGU06N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

67 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

24 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

318 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-251AA

e3

41 ns

SIGC07T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

UNSPECIFIED

MOTOR CONTROL

24 ns

NO LEAD

SQUARE

1

65 ns

274 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

40 ns

SKB06N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

41 ns

SKB06N60HSATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

245 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

23 ns

AUIRGR4045D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

22 ns

127 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

38 ns

IKB06N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

17 ns

IKD06N60RFA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

149 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

17 ns

AEC-Q101

AUIRGR4045DTRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

22 ns

127 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

38 ns

IRGB5B120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

89 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

27 ns

THROUGH-HOLE

RECTANGULAR

1

29 ns

132 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

IRGB4045DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

THROUGH-HOLE

RECTANGULAR

1

22 ns

127 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

41 ns

IKD06N60RFXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

16 ns

IKD06N60RBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

22 ns

IRGB4B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

199 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRGR4045DTRPBF

Infineon Technologies

N-CHANNEL

YES

77 W

12 A

15 ns

22 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

1

IKD06N60RA

Infineon Technologies

N-CHANNEL

YES

100 W

12 A

Insulated Gate BIP Transistors

175 Cel

500 V

20 V

5.7 V

TIN

1

e3

260

IKD06N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

2.5 V

GULL WING

RECTANGULAR

1

150 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

16 ns

IKD06N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

22 ns

IKB06N60TXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G3

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

SKB06N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

41 ns

SGP06N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

41 ns

SKB06N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

12 A

PLASTIC/EPOXY

POWER CONTROL

22 ns

GULL WING

RECTANGULAR

1

84 ns

318 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

41 ns

SKB06N60XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

41 ns

IRGB4B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

THROUGH-HOLE

RECTANGULAR

1

89 ns

199 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRGB5B120KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

132 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

AUIRGR4045DTR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

22 ns

127 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

38 ns

AUIRGR4045DTRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

22 ns

127 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

38 ns

IGP06N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

88 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

17 ns

AUIRGU4045D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

THROUGH-HOLE

RECTANGULAR

1

22 ns

127 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251AA

e3

38 ns

IRGR4045DTRRPBF

Infineon Technologies

N-CHANNEL

YES

77 W

12 A

15 ns

22 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

1

SKB06N60HS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

245 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

23 ns

SGP06N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

50 W

12 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

108 ns

318 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

SGD06N60XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252AA

41 ns

SGD06N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

67 W

12 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

65 ns

318 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

260

41 ns

IRGR4045DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

12 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

22 ns

127 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

38 ns

SGP06N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

MIG12J504L

Toshiba

12 A

2.3 V

1

Insulated Gate BIP Transistors

100 Cel

600 V

2SH17

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

MUBW15-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

75 W

12 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

200 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

30 ns

MUBW20-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

12 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

165 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

PURE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

IXBH6N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

12 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

104 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.