Infineon Technologies - IRGSL4B60KPBF

IRGSL4B60KPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGSL4B60KPBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 12 A; Transistor Application: MOTOR CONTROL;
Datasheet IRGSL4B60KPBF Datasheet
In Stock47
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 23 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN OVER NICKEL
Nominal Turn Off Time (toff): 199 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 40 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Fall Time (tf): 89 ns
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-262
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
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