Renesas Electronics - 2SH17

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2SH17 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SH17
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 600 V;
Datasheet 2SH17 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
JEDEC-95 Code: TO-220AB
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 50 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
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