Toshiba - MIG12J504L

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MIG12J504L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG12J504L
Description Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 12 A; No. of Elements: 1; Maximum VCEsat: 2.3 V; Maximum Operating Temperature: 100 Cel; Maximum Collector-Emitter Voltage: 600 V;
Datasheet MIG12J504L Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 12 A
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 100 Cel
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.3 V
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