120 A Insulated Gate Bipolar Transistors (IGBT) 64

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IGW75N65H5	Infineon Technologies	N-CHANNEL	SINGLE	NO	395 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		232 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			61 ns
IRG7PSH54K10DPBF	Infineon Technologies	N-CHANNEL		NO	520 W	120 A			105 ns					90 ns				Insulated Gate BIP Transistors		150 Cel		1200 V		30 V	7.5 V
MG120V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1200 W	120 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1200 W	150 Cel	SILICON	1700 V		20 V	8 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	100 ns
RJP4006AGE-00-P5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		120 A	PLASTIC/EPOXY				C BEND	RECTANGULAR	1			8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V	1.2 V		DUAL	R-PDSO-C8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
IXXA50N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		320 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	75 ns
IXXP50N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				75 ns
IXYN50N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	120 A	PLASTIC/EPOXY	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	1		396 ns	4	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		UPPER	R-PUFM-X4		ISOLATED							62 ns	UL RECOGNIZED
IXDN75N120A	Littelfuse	N-CHANNEL	SINGLE	NO	630 W	120 A	PLASTIC/EPOXY	MOTOR CONTROL	140 ns		UNSPECIFIED	RECTANGULAR	1	100 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	6.5 V	NICKEL	UPPER	R-PUFM-X4			Not Qualified							UL RECOGNIZED
IXGN80N30BD1	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	120 A	UNSPECIFIED	MOTOR CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	1		400 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified						112 ns
IXGP48N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		925 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				54 ns
IXGA9289	Littelfuse	N-CHANNEL	SINGLE	YES		120 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		124 ns	2	SMALL OUTLINE			150 Cel	SILICON	300 V	-55 Cel			Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	104 ns
IXYN82N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	1		295 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	4.5 V		UPPER	R-PUFM-X4		ISOLATED							119 ns	UL RECOGNIZED
MIXA80R1200VA	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	1		350 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X8		ISOLATED							110 ns	UL RECOGNIZED
MIXA80W1200TEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X13		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
MIXA80WB1200TEH	Littelfuse	N-CHANNEL	COMPLEX	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXYH40N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	680 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		270 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.