120 A Insulated Gate Bipolar Transistors (IGBT) 64

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGH60N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

70 ns

THROUGH-HOLE

RECTANGULAR

1

68 ns

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

59 ns

FGH60N60SMD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

20 ns

139 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

66 ns

AEC-Q101

FGH60N60SMD_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

139 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

66 ns

AEC-Q101

FGH60N60SFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

62 ns

187 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

66 ns

FGH60N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

83 ns

FGH60N60SFTU

Onsemi

N-CHANNEL

SINGLE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

62 ns

187 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

66 ns

AFGY100T65SPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IXXH50N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

75 ns

STGW60V60DF

STMicroelectronics

N-CHANNEL

NO

375 W

120 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW80V60DF

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FGH60N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

62 ns

166 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

76 ns

AEC-Q101

FGH60N60SFDTU-F085

Onsemi

N-CHANNEL

SINGLE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

62 ns

166 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

76 ns

AEC-Q101

IGW75N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IXGH48N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

MIXA80W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

STGW80H65DFB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW80H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

470 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

448 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

104 ns

IXGA48N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

GULL WING

RECTANGULAR

1

925 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

54 ns

IXXH50N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

75 ns

MIXA81H1200EH

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

4

350 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X14

ISOLATED

110 ns

UL RECOGNIZED

FGA6065ADF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

120 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

99 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

FAST SWITCHING

e3

92.8 ns

FGA60N65SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

70 ns

THROUGH-HOLE

RECTANGULAR

1

68 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

FGH60T65SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

85 ns

FGH60T65SQD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

126.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

36.8 ns

FGA60N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-XSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

83 ns

FGA6560WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

99 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

85.6 ns

FGH60N60UFDTU-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

218 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

83 ns

AEC-Q101

FGY60T120SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

517 W

120 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.95 V

THROUGH-HOLE

RECTANGULAR

1

468 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

112 ns

NGTB60N60SWG

Onsemi

N-CHANNEL

NO

298 W

120 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

TIN

e3

STGWA80H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

470 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

358 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

128 ns

STGWT60H65F

STMicroelectronics

N-CHANNEL

NO

360 W

120 A

Insulated Gate BIP Transistors

150 Cel

650 V

20 V

STGW80H65FB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

NO

469 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

448 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

104 ns

STGWT80H65FB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGY80H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

469 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

358 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

128 ns

STGW75M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWT80V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

469 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

90 ns

STGW60H65F

STMicroelectronics

N-CHANNEL

SINGLE

NO

360 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

96 ns

STGW60H65DRF

STMicroelectronics

N-CHANNEL

NO

360 W

120 A

Insulated Gate BIP Transistors

150 Cel

650 V

20 V

Matte Tin (Sn)

e3

STGWT80V60DF

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW60H65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

113 ns

STGW80H65FB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGWT80H65DFB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGWA80H65FB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGW80V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

469 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

90 ns

STGFW80V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

79 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

90 ns

STGWA75M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

IRGC4067B

Infineon Technologies

N-CHANNEL

120 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

GW75N65H5

Infineon Technologies

N-Channel

395 W

120 A

2.1 V

196 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

NOT SPECIFIED

NOT SPECIFIED

39 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.